D. A. Zakheim

发表

Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs

Volodymyr K. Malyutenko, O. Yu. Malyutenko, A. V. Zinovchuk, 2005, SPIE Optics + Photonics.

Blue flip-chip AlGaInN LEDs with removed sapphire substrate

L. K. Markov, M. R. Rymalis, D. A. Zakheim, 2006 .

Technique for forming ITO films with a controlled refractive index

L. K. Markov, D. A. Zakheim, I. P. Smirnova, 2016 .

Calculation of the optimal architecture of a double-layer ITO film intended for use in reflective contacts in blue and near-UV LEDs

L. K. Markov, D. A. Zakheim, I. P. Smirnova, 2015 .

Use of double-layer ITO films in reflective contacts for blue and near-UV LEDs

L. K. Markov, D. A. Zakheim, I. P. Smirnova, 2014 .

Efficiency droop suppression in InGaN‐based blue LEDs: Experiment and numerical modelling

D. A. Bauman, K. A. Bulashevich, O. V. Khokhlev, 2012 .

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density

D. A. Zakheim, I. Rozhansky, I. V. Rozhansky, 2006 .

Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

D. A. Zakheim, I. Rozhansky, I. V. Rozhansky, 2007 .

Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

D. A. Zakheim, S. Karpov, P. Brunkov, 2018 .

Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride

D. A. Zakheim, S. Karpov, P. Brunkov, 2018, Semiconductor Science and Technology.

Modeling of the electrical properties of polycrystalline ceramic semiconductors with submicron grains

D. A. Zakheim, I. Rozhansky, 2005 .

Simulation of the electrical properties of polycrystalline ceramic semiconductors with submicrometer grain sizes

D. A. Zakheim, I. Rozhanskiĭ, I. V. Rozhanskii, 2005 .

Proton irradiation effects on GaN-based epitaxial structures

A. N. Smirnov, D. A. Zakheim, A. Lebedev, 2020, Journal of Physics: Conference Series.

High-power AlGaInN LED chips with two-level metallization

L. K. Markov, D. A. Zakheim, I. P. Smirnova, 2014 .

Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

D. A. Zakheim, A. Tsatsul'nikov, A. V. Sakharov, 2019, Semiconductors.

Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

D. A. Zakheim, A. Tsatsul'nikov, A. V. Sakharov, 2019, Journal of Physics: Conference Series.

Efficiency improvement of AlGaInN LEDs advanced by ray-tracing analysis

D. A. Zakheim, V. Zabelin, D.A. Zakheim, 2004, IEEE Journal of Quantum Electronics.

Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

A. N. Smirnov, D. A. Zakheim, V. Davydov, 2018, Journal of Crystal Growth.

Reactive ion etched quantum wire structures for laser applications

D. A. Zakheim, I. V. Kochnev, S. Gurevich, 1995 .

Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

D. A. Zakheim, P. Brunkov, A. V. Sakharov, 2020, Journal of Physics: Conference Series.

Structural analysis of composite metal-insulator materials by small-angle x-ray scattering

D. A. Zakheim, S. Gurevich, I. V. Rozhanskii, 2001 .

Field effect in granular metal films

D. A. Zakheim, I. Rozhansky, S. Gurevich, 2003 .

Temperature dependence of the conductivity of Cu: SiO2 composite films. Experiment and numerical simulation

D. A. Zakheim, I. P. Smirnova, I. Rozhansky, 2000 .

Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping

D. A. Zakheim, I. Rozhansky, 2006 .