C. Surisetty

Air spacer for 10nm FinFET CMOS and beyond

M. Wang, T. Yamashita, H. Bu, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Bottom oxidation through STI (BOTS) — A novel approach to fabricate dielectric isolated FinFETs on bulk substrates

P. Oldiges, B. Haran, H. Bu, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

B. Lherron, D. Chanemougame, P. Oldiges, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

P. Oldiges, C. Park, N. Loubet, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Tungsten and cobalt metallization: A material study for MOL local interconnects

F. Chafik, F. Mont, B. Haran, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).