K. Inoh

Design of a 128-mb SOI DRAM using the floating body cell (FBC)

T. Ohsawa, T. Higashi, T. Furuyama, 2006, IEEE Journal of Solid-State Circuits.

Floating Body RAM Technology and its Scalability to 32nm Node and Beyond

T. Ohsawa, T. Higashi, A. Nitayama, 2006, 2006 International Electron Devices Meeting.

A compact lateral-SOI BJT model for RF circuit simulation

K. Inoh, Tomoaki Shino, Tsuneaki Fuse, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

An 0.3- m Si Epitaxial Base BiCMOS Technology with 37-GHz and 10-V BV for RF Telecommunication

Hiroshi Naruse, Sadayuki Yoshitomi, K. Inoh, 1999 .

3-D simulation analysis of high performance SOI lateral BJT for RF applications

Shigeyoshi Watanabe, K. Inoh, Tsuneaki Fuse, 1998, 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).

Advanced rf CMOS technology

Hiroshi Iwai, K. Inoh, Tatsuya Ohguro, 1999, Smart Materials, Nano-, and Micro- Smart Systems.

Floating Body Cell

Shigeyoshi Watanabe, Takashi Ohsawa, K. Inoh, 2005 .

A 31 GHz f/sub max/ lateral BJT on SOI using self-aligned external base formation technology

Y. Katsumata, T. Shino, K. Inoh, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Fully-depleted FBC (floating body cell) with enlarged signal window and excellent logic process compatibility

Akihiro Nitayama, Takashi Ohsawa, K. Inoh, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

A novel lateral bipolar transistor with 67 GHz f/sub max/ on thin-film SOI for RF analog applications

K. Inoh, Shigeru Kawanaka, Yasuhiro Katsumata, 2000 .

Operation voltage dependence of memory cell characteristics in fully depleted floating-body cell

Akihiro Nitayama, Takashi Ohsawa, K. Inoh, 2005, IEEE Transactions on Electron Devices.