C. Faulkner

Improved short-channel FET performance with virtual extensions

D. Connelly, C. Faulkner, P.A. Clifton, 2006, IEEE Transactions on Electron Devices.

Improved short-channel n-FET performance with virtual extensions

D. Connelly, C. Faulkner, P.A. Clifton, 2005, Extended Abstracts of the Fifth International Workshop on Junction Technology.

A new route to zero-barrier metal source/drain MOSFETs

C. Faulkner, J.S. Harris, D. Connelly, 2004, IEEE Transactions on Nanotechnology.

Optimizing Schottky S/D offset for 25-nm dual-gate CMOS performance

C. Faulkner, D. Connelly, D. Grupp, 2003, IEEE Electron Device Letters.

Ultra-thin-body fully depleted SOI metal source/drain n-MOSFETs and ITRS low-standby-power targets through 2018

C. Faulkner, D. Connelly, D.E. Grupp, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Performance advantage of Schottky source/drain in ultrathin-body silicon-on-insulator and dual-gate CMOS

C. Faulkner, Daniel J. Connelly, D. Connelly, 2003 .