J. N. Baillargeon

The Influence Of In On The Performance Of (Al)GaAs Single Quantum Well Lasers

James J. Coleman, Joseph M. Ballantyne, C. M. Harding, 1989, Photonics West - Lasers and Applications in Science and Engineering.

Temperature dependence of hole mobility in carbon-doped GaAs grown by LP-MOCVD and MOMBE

K. C. Hsieh, J. N. Baillargeon, Stephen A. Stockman, 1991 .

The gas source molecular beam epitaxial growth of AlxGa1−xP on (100) GaP

K. C. Hsieh, J. N. Baillargeon, K. Cheng, 1990 .

Growth and characterization of InxGa1−xAs on Si by molecular‐beam epitaxy

K. C. Hsieh, J. N. Baillargeon, K. Y. Cheng, 1990 .

High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array

James J. Coleman, P. K. York, K. J. Beernink, 1988 .

Using a Wavelength-Modulated Quantum Cascade Laser to Measure NO Concentrations in the Parts-per-Billion Range for Vehicle Emissions Certification

A. Y. Cho, C. Gmachl, J. T. Remillard, 2002 .

GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

A. Y. Cho, K. Y. Cheng, J. N. Baillargeon, 1995 .

Compositional modulation and long‐range ordering in GaP/InP short‐period superlattices grown by gas source molecular beam epitaxy

K. C. Hsieh, J. N. Baillargeon, K. Cheng, 1990 .

Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process

K. C. Hsieh, J. N. Baillargeon, K. Cheng, 1992 .

High-power continuous-wave quantum cascade lasers

Carlo Sirtori, Federico Capasso, Jérôme Faist, 1998 .