Marty R. Shaneyfelt

发表

Design Guidelines for the Use of COTS in Military and Space Systems

L. Scott, G. K. Lum, F. W. Sexton, 1999 .

Statistical process control for QML (Qualified Manufacturer's List) radiation hardness assurance

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1990 .

SEU response of design- and resistor-hardened D-latches in the SA3300 microprocessor

C. L. Axness, F. W. Sexton, Marty R. Shaneyfelt, 1991 .

Single Event Effects Testing Results in Sandia National Laboratories Via Programmable ASIC Platforms.

John Teifel, Marty R. Shaneyfelt, J. D. Black, 2015 .

Effects of e-beam mail sanitizing process on commercial electronics

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Resistive Memory for Space Applications.

Barney Lee Doyle, Michael Lee McLain, Andrew J. Lohn, 2015 .

Hardness variability in commercial technologies

Marty R. Shaneyfelt, P. S. Winokur, F. W. Sexton, 1994 .

Outstanding conference paper award 2014 IEEE nuclear and space radiation effects conference

Kenneth A. LaBel, Robert A. Reed, Barney Lee Doyle, 2014 .

Hardness variability in commercial and hardened technologies

Marty R. Shaneyfelt, P. S. Winokur, F. W. Sexton, 1994 .

Impact of technology trends on SEU in CMOS SRAMs

Marty R. Shaneyfelt, F. W. Sexton, Paul E. Dodd, 1996 .

Use of COTS microelectronics in radiation environments

Marty R. Shaneyfelt, P. S. Winokur, F. W. Sexton, 1999 .

Charge collection and SEU from angled ion strikes

Marty R. Shaneyfelt, Paul E. Dodd, F. W. Sexton, 1997 .

Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts

Ronald D. Schrimpf, John Teifel, Marty R. Shaneyfelt, 2019, IEEE Transactions on Nuclear Science.

Effectiveness of Body Ties for Imporving the Soft Error Tolerance of SOI Technologies

Marty R. Shaneyfelt, Paul E. Dodd, Bruce L. Draper, 1999 .

Advanced qualification techniques [microelectronics]

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1994 .

Hardness Assurance Issues for Proton Testing for Space Environments.

Veronique Ferlet-Cavrois, Marty R. Shaneyfelt, Philippe Paillet, 2006 .

Radiation-hardened distributed power systems.

Joseph Brandon Witcher, Z. John Shen, Patrick Shea, 2010 .

Wafer-level radiation testing for hardness assurance

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1991 .

Implementing QML for radiation hardness assurance

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1990 .

Radiation hardness assurance categories for COTS technologies

Marty R. Shaneyfelt, P. S. Winokur, F. W. Sexton, 1997, 1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference.

Semi-Empirical Model for SEGR Prediction

Ari Virtanen, Veronique Ferlet-Cavrois, Michele Muschitiello, 2013, IEEE Transactions on Nuclear Science.

1/f noise in n- and p-channel MOS devices through irradiation and annealing

Daniel M. Fleetwood, Marty R. Shaneyfelt, T. L. Meisenheimer, 1991 .

Latent interface-trap buildup and its implications for hardness assurance (MOS transistors)

C. L. Axness, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1992 .

Effects of device scaling and geometry on MOS radiation hardness assurance

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures

Robert M. Wallace, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1997 .

Charge collection in SOI capacitors and circuits and its effect on SEU hardness

D. S. Walsh, Barney Lee Doyle, Marty R. Shaneyfelt, 2002 .

Effects of burn-in on radiation hardness

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1994 .

Effects of reliability screens on MOS charge trapping

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1995 .

Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in ${\rm TaO}_{\rm x}$ Memristors

Andrew J. Lohn, Patrick R. Mickel, Matthew J. Marinella, 2014, IEEE Transactions on Nuclear Science.

Border traps: issues for MOS radiation response and long-term reliability

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1995 .

A dose rate independent pMOS dosimeter for space applications

Marty R. Shaneyfelt, J. R. Schwank, S. B. Roeske, 1996 .

Analysis of heavy-ion induced charge collection mechanisms in SOI circuits

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 2004 .

A Comparison of the Radiation Response of ${\rm TaO}_{\rm x}$ and ${\rm TiO}_2$ Memristors

Andrew J. Lohn, Patrick R. Mickel, Matthew J. Marinella, 2013, IEEE Transactions on Nuclear Science.

Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements

David F. Heidel, Kenneth A. LaBel, Veronique Ferlet-Cavrois, 2009, IEEE Transactions on Nuclear Science.

Radiation-induced defect centers in bonded and etchback SOI materials

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1990 .

New insights into fully-depleted SOI transistor response after total-dose irradiation

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 1999 .

Impact of substrate thickness on single-event effects in integrated circuits

Marty R. Shaneyfelt, P. S. Winokur, F. W. Sexton, 2001 .

Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs

R. L. Pease, Barney Lee Doyle, Daniel M. Fleetwood, 2002 .

Charge Trapping and Annealing in High- Gate Dielectrics

Daniel M. Fleetwood, Marty R. Shaneyfelt, Paul E. Dodd, 2004 .

Paramagnetic defect centers in BESOI and SIMOX buried oxides

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

Effects of particle energy on proton and neutron-induced single-event latchup.

Marty R. Shaneyfelt, Philippe Paillet, J. Baggio, 2005 .

Mechanisms for radiation dose-rate sensitivity of bipolar transistors

R. L. Pease, Arthur H. Edwards, Marty R. Shaneyfelt, 2003 .

Proton irradiation effects on advanced digital and microwave III-V components

Marty R. Shaneyfelt, F. W. Sexton, Charles C. Foster, 1994 .

Investigation of body-tie effects on ion beam induced charge collection in silicon-on-insulator FETs using the Sandia nuclear microprobe

Marty R. Shaneyfelt, Paul E. Dodd, David S. Walsh, 2000 .

Worst-case bias during total dose irradiation of SOI transistors

J. L. Pelloie, Marty R. Shaneyfelt, J. R. Schwank, 2000 .

Implications of radiation-induced dopant deactivation for npn bipolar junction transistors

Marty R. Shaneyfelt, P. S. Winokur, J. R. Schwank, 2000 .

Mechanisms for enhanced packaging and/or burn-in total dose sensitivity in microelectronics

R. L. Pease, Marty R. Shaneyfelt, P. S. Winokur, 1997 .

Effects of angle of incidence on proton-induced single-event latchup.

Veronique Ferlet-Cavrois, Marty R. Shaneyfelt, Philippe Paillet, 2006 .

Charge collection by capacitive influence through isolation oxides

Marty R. Shaneyfelt, J. R. Schwank, J. Baggio, 2003 .

Optimum laboratory radiation source for hardness assurance testing

Marty R. Shaneyfelt, F. W. Sexton, J. R. Schwank, 2001 .

Total-dose radiation response of hafnium-silicate capacitors

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2002 .

SEU simulation and testing of resistor-hardened D-latches in the SA3300 microprocessor

C. L. Axness, Marty R. Shaneyfelt, F. W. Sexton, 1991 .

Comparison of low-energy x-ray and cobalt-60 irradiations of MOS devices as a function of gate bias

Daniel M. Fleetwood, Marty R. Shaneyfelt, J. R. Schwank, 1991 .

Improved capabilities for proton and neutron irradiations at TRIUMF

Marty R. Shaneyfelt, Paul E. Dodd, E. W. Blackmore, 2003, 2003 IEEE Radiation Effects Data Workshop.

Links between oxide, interface, and border traps in high‐temperature annealed Si/SiO2 systems

Daniel Mathiot, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1994 .

Radiation-Induced Charge Trapping in Thin

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2003 .

Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements

David F. Heidel, Kenneth A. LaBel, Veronique Ferlet-Cavrois, 2009 .

Radiation effects microscopy for failure analysis of microelectronic devices

Barney Lee Doyle, Marty R. Shaneyfelt, J. R. Schwank, 2005 .

Interface-trap building rates in wet and dry oxides

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1992 .

Effects of ion damage on IBICC and SEU imaging

Barney Lee Doyle, Marty R. Shaneyfelt, F. W. Sexton, 1995 .

Single-event upset and snapback in silicon-on-insulator devices and integrated circuits

D. S. Walsh, Marty R. Shaneyfelt, P. S. Winokur, 2000 .

Radiation effects on surface micromachined comb drives and microengines

D. S. Walsh, Barney Lee Doyle, Marty R. Shaneyfelt, 1998 .

Effects of irradiation temperature on MOS radiation response

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1997 .

Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices

Daniel M. Fleetwood, Marty R. Shaneyfelt, J. R. Schwank, 1991 .

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Lloyd W. Massengill, Kenneth F. Galloway, Ronald D. Schrimpf, 2002 .

Challenges in hardening technologies using shallow-trench isolation

Marty R. Shaneyfelt, Paul E. Dodd, Bruce L. Draper, 1998 .

Strategies for lot acceptance testing using CMOS transistors and ICs

Daniel M. Fleetwood, Marty R. Shaneyfelt, F. W. Sexton, 1989 .

Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films

Robert M. Wallace, George A. Brown, Daniel M. Fleetwood, 1998 .

Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks

E. P. Gusev, Ronald D. Schrimpf, Daniel M. Fleetwood, 2003 .

Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 2000 .

BUSFET-a radiation-hardened SOI transistor

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 1999 .

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2004 .

Comparison of charge yield in MOS devices for different radiation sources

Marty R. Shaneyfelt, J. R. Schwank, P. Paillet, 2002 .

The role of border traps in MOS high-temperature postirradiation annealing response

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

Generation of metastable electron traps in the near interfacial region of SOI buried Oxides by ion implantation and their effect on device properties

Daniel M. Fleetwood, Marty R. Shaneyfelt, J. R. Schwank, 2003 .

Enhanced MOS 1/f noise due to near-interfacial oxygen deficiency

John H. Scofield, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1995 .

Theory and application of dual-transistor charge separation analysis

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1989 .

Origins of total-dose response variability in linear bipolar microcircuits

R. L. Pease, Ronald D. Schrimpf, Daniel M. Fleetwood, 2000 .

Proton-Induced Upsets in SLC and MLC NAND Flash Memories

Alessandro Paccagnella, Angelo Visconti, Veronique Ferlet-Cavrois, 2013, IEEE Transactions on Nuclear Science.

Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices

R. L. Pease, Marty R. Shaneyfelt, J. R. Schwank, 2003 .

Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors

Daniel M. Fleetwood, Marty R. Shaneyfelt, J. R. Schwank, 1994 .

Effects of interface traps and border traps on MOS postirradiation annealing response

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1995 .

A critical comparison of charge-pumping, dual-transistor, and midgap measurement techniques (MOS transistors)

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits

R. L. Pease, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1997 .

New insights into fully-depleted SOI transistor response after total-dose irradiation

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

Impact of Aging on Radiation Hardness

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1997 .

Impact of aging on radiation hardness[CMOS SRAMs]

R. L. Pease, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1997 .