Tetsuya Goto

发表

High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer

Tadahiro Ohmi, Shun'ichiro Ohmi, Yasutaka Maeda, 2016, IEICE Trans. Electron..

Alumina reduction by laser sustained plasma for aluminum-based renewable energy cycling

Masakatsu Nakano, Kimiya Komurasaki, Tetsuya Goto, 2013 .

Micromanipulator system (NeuRobot): clinical application in neurosurgery

Toshikazu Kawai, Kazutoshi Kan, Yuichiro Tanaka, 2003, CARS.

Low coke rate operation at the Kobe Steel Kakogawa No. 2 blast furnace

Tetsuya Goto, Ryuichi Hori, K. Kuwano, 1991 .

Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET

Tadahiro Ohmi, Shun'ichiro Ohmi, Yasutaka Maeda, 2017, IEICE Trans. Electron..

Vehicle parking brake device

Yasuhiro Maeda, Tetsuya Goto, Hiroyuki Horiuchi, 2004 .

Blast furnace operation with small- size sinter by the control of radial particle size distribution

R. Hori, Tetsuya Goto, Yoshiyuki Matsui, 1993 .

[Invite Paper] High Accuracy High Spatial Resolution and Real-Time CMOS Proximity Capacitance Image Sensor Technology and its Applications

Rihito Kuroda, Shigetoshi Sugawa, Watanabe Yoshiaki, 2021 .

Estimation of the mobility of low temperature polycrystalline silicon thin film transistors through deep learning

Tetsuya Goto, Daisuke Nakamura, Hiroshi Ikenoue, 2021, LASE.

Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2015 .

High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment

Tadahiro Ohmi, Shigetoshi Sugawa, Takeyoshi Kato, 2004 .

LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System

Shigetoshi Sugawa, Tetsuya Goto, Hiroshi Ikenoue, 2018, IEEE Transactions on Electron Devices.

Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2008 .

Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

Rihito Kuroda, Shigetoshi Sugawa, Shunichi Wakashima, 2018 .

MFIS-structure Memory Device with High Quality Ferroelectric Sr2(Ta1-x Nbx)2O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2004 .