D. Brisbin

Photo Misalignment Impact on the Hot Carrier Reliability of Lateral DMOS Devices

D. Brisbin, P. Lindorfer, P. Chaparala, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

PMOS drain breakdown voltage walk-in: a new failure mode in high power BiCMOS applications

D. Brisbin, P. Chaparala, A. Strachan, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

WLR fast tests for characterization of a BiCMOS process and identification of mobile ionic contamination

D. Brisbin, M. Poulter, 1995, IEEE 1995 International Integrated Reliability Workshop. Final Report.

TheEffect oftheSubthreshold SlopeDegradation on NBTI DeviceCharacterization

D. Brisbin, P. Chaparala, 2008 .

Effect of Photo Misalignment on N-LDMOS Hot Carrier Device Reliability

D. Brisbin, P. Lindorfer, P. Chaparala, 2006, 2006 IEEE International Integrated Reliability Workshop Final Report.

Design optimization of N-LDMOS transistor arrays for hot carrier lifetime enhancement

D. Brisbin, P. Chaparala, A. Strachan, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Anomalous NMOSFET hot carrier degradation due to trapped positive charge in a DGO CMOS process

D. Brisbin, P. Chaparala, Y. Mirgorodski, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Isothermal versus standard wafer electromigration test for the characterization of metal systems

D. Brisbin, T. Turner, 1997, 1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319).

NBTI in dual gate oxide PMOSFETs

Prasad Chaparala, D. Brisbin, D. Brisbin, 2003, 2003 8th International Symposium Plasma- and Process-Induced Damage..

Electrical characteristics and reliability of extended drain voltage NMOS devices with multi-RESURF junction

D. Brisbin, P. Lindorfer, P. Chaparala, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..