T. Hoshi

Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects (Special Issue on Sub-Half Micron Si Device and Process Technologies)

Tadahiro Ohmi, Tadashi Shibata, Takahisa Nitta, 1993 .

Triple density DRAM cell with Si selective growth channel and NAND-structure

T. Hoshi, T. Hamamoto, M. Noguchi, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly Developed Accelerated Life‐Test Method

Tadashi Shibata, Tadahiro Ohmi, Takahisa Nitta, 1993 .