M. Buczko

Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC

E. Granger, N. Revil, G. Bertrand, 2016, 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX

D. Celi, P. Chevalier, C. Gaquiere, 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

0.13μm SiGe BiCMOS technology for mm-wave applications

P. Chevalier, L. Depoyan, D. Dutartre, 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

High field transport characterization in nano MOSFETs using 10GHz capacitance measurements

G. Ghibaudo, J. Rosa, D. Gloria, 2013, 2013 IEEE International Electron Devices Meeting.

Improvement of the RF power performance of nLDMOSFETs on bulk and SOI substrates with ‘ribbon’ gate and source contacts layouts

P. Chevalier, C. Gaquiere, D. Ducatteau, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs

P. Chevalier, C. Gaquiere, L. Depoyan, 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

A selective epitaxy collector module for high-speed Si/SiGe:C HBTs

Alain Chantre, Pascal Chevalier, Francois Danneville, 2009 .