J. R. Schwank

发表

Statistical process control for QML (Qualified Manufacturer's List) radiation hardness assurance

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1990 .

Effects of e-beam mail sanitizing process on commercial electronics

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics

Daniel M. Fleetwood, J. R. Schwank, Evgeni P. Gusev, 2004, Microelectron. Reliab..

A PROGRAMMABLE TESTSYSTEMFORTRANSIENTANNEALINGCHARACTERIZATIONOFIRRADIATEDMOSFETS

J. R. Schwank, R. L. Pease, H. J. TauschandR . Wemhoner, 1987 .

Using a 10-keV X-Ray Source for Hardness Assurance

J. R. Schwank, R. K. Treece, F. W. Sexton, 1986, IEEE Transactions on Nuclear Science.

Latent interface-trap buildup and its implications for hardness assurance (MOS transistors)

C. L. Axness, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1992 .

Effects of device scaling and geometry on MOS radiation hardness assurance

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devices

Daniel M. Fleetwood, J. R. Schwank, D. Fleetwood, 1988 .

Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures

Robert M. Wallace, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1997 .

Correlating the Radiation Response of MOS Capacitors and Transistors

P. S. Winokur, J. R. Schwank, P. V. Dressendorfer, 1984, IEEE Transactions on Nuclear Science.

Charge collection in SOI capacitors and circuits and its effect on SEU hardness

D. S. Walsh, Barney Lee Doyle, Marty R. Shaneyfelt, 2002 .

Effects of burn-in on radiation hardness

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1994 .

Dose enhancement in a room cobalt-60 source

R. L. Pease, Daniel M. Fleetwood, J. R. Schwank, 1997 .

Effects of reliability screens on MOS charge trapping

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1995 .

Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing

P. S. Winokur, F. W. Sexton, J. R. Schwank, 1986, IEEE Transactions on Nuclear Science.

Border traps: issues for MOS radiation response and long-term reliability

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1995 .

A dose rate independent pMOS dosimeter for space applications

Marty R. Shaneyfelt, J. R. Schwank, S. B. Roeske, 1996 .

Irradiation response of mobile protons in buried SiO/sub 2/ films

Shashi P. Karna, Daniel M. Fleetwood, J. R. Schwank, 1997 .

Analysis of heavy-ion induced charge collection mechanisms in SOI circuits

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 2004 .

Single event upset in irradiated 16 K CMOS SRAMs

J. S. Browning, C. L. Axness, R. Koga, 1988 .

Radiation-induced defect centers in bonded and etchback SOI materials

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

Mechanism for anneal‐induced interfacial charging in SiO2 thin films on Si

Daniel M. Fleetwood, P. S. Winokur, J. R. Schwank, 1996 .

The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices

P. S. Winokur, J. R. Schwank, P. V. Dressendorfer, 1987, IEEE Transactions on Nuclear Science.

Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1990 .

New insights into fully-depleted SOI transistor response after total-dose irradiation

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 1999 .

Charge collection in GaAs MESFETs fabricated in semi-insulating substrates

F. W. Sexton, J. R. Schwank, T. R. Weatherford, 1995 .

Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs

R. L. Pease, Barney Lee Doyle, Daniel M. Fleetwood, 2002 .

Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains

J. R. Schwank, S. E. Swanson, G. Vizkelethy, 2011, IEEE Transactions on Nuclear Science.

Advantages and limitations of silicon-on-insulator technology in radiation environments

J. R. Schwank, 1997 .

Paramagnetic defect centers in BESOI and SIMOX buried oxides

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

The Response of MOS Devices to Dose-Enhanced Low-Energy Radiation

P. S. Winokur, J. R. Schwank, P. V. Dressendorfer, 1986, IEEE Transactions on Nuclear Science.

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

C. Poivey, J. R. Schwank, N. Ikeda, 2012, IEEE Transactions on Nuclear Science.

Basic mechanisms of radiation effects in the natural space radiation environment

J. R. Schwank, 1994 .

Mechanisms for radiation dose-rate sensitivity of bipolar transistors

R. L. Pease, Arthur H. Edwards, Marty R. Shaneyfelt, 2003 .

Physical Mechanisms Contributing to Device "Rebound"

P. S. Winokur, F. W. Sexton, J. R. Schwank, 1984, IEEE Transactions on Nuclear Science.

High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibility

F. V. Thome, Daniel M. Fleetwood, J. R. Schwank, 1988 .

An IC Compatible Ionizing Radiation Detector

J. R. Schwank, W. R. Dawes, 1981, IEEE Transactions on Nuclear Science.

Worst-case bias during total dose irradiation of SOI transistors

J. L. Pelloie, Marty R. Shaneyfelt, J. R. Schwank, 2000 .

Implications of radiation-induced dopant deactivation for npn bipolar junction transistors

Marty R. Shaneyfelt, P. S. Winokur, J. R. Schwank, 2000 .

Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments

Daniel M. Fleetwood, P. S. Winokur, J. R. Schwank, 1988 .

SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

D. S. Walsh, P. S. Winokur, F. W. Sexton, 2001 .

Large SET broadening in a fully-depleted SOI technology — Mitigation with body contacts

H. Ikeda, M. Gaillardin, D. Kobayashi, 2009, 2009 European Conference on Radiation and Its Effects on Components and Systems.

Charge collection by capacitive influence through isolation oxides

Marty R. Shaneyfelt, J. R. Schwank, J. Baggio, 2003 .

Optimum laboratory radiation source for hardness assurance testing

Marty R. Shaneyfelt, F. W. Sexton, J. R. Schwank, 2001 .

Total-dose radiation response of hafnium-silicate capacitors

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2002 .

Comparison of low-energy x-ray and cobalt-60 irradiations of MOS devices as a function of gate bias

Daniel M. Fleetwood, Marty R. Shaneyfelt, J. R. Schwank, 1991 .

Radiation-Induced Interface-State Generation in MOS Devices

P. S. Winokur, F. W. Sexton, J. R. Schwank, 1986, IEEE Transactions on Nuclear Science.

Links between oxide, interface, and border traps in high‐temperature annealed Si/SiO2 systems

Daniel Mathiot, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1994 .

Radiation-Induced Charge Trapping in Thin

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2003 .

Radiation effects microscopy for failure analysis of microelectronic devices

Barney Lee Doyle, Marty R. Shaneyfelt, J. R. Schwank, 2005 .

Interface-trap building rates in wet and dry oxides

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1992 .

A new physics-based model for understanding single-event gate rupture in linear devices

J. R. Schwank, H. O'Donnell, G. K. Lum, 2001 .

Single-event upset and snapback in silicon-on-insulator devices and integrated circuits

D. S. Walsh, Marty R. Shaneyfelt, P. S. Winokur, 2000 .

Radiation effects on surface micromachined comb drives and microengines

D. S. Walsh, Barney Lee Doyle, Marty R. Shaneyfelt, 1998 .

Effects of irradiation temperature on MOS radiation response

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1997 .

Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices

Daniel M. Fleetwood, Marty R. Shaneyfelt, J. R. Schwank, 1991 .

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Lloyd W. Massengill, Kenneth F. Galloway, Ronald D. Schrimpf, 2002 .

Strategies for lot acceptance testing using CMOS transistors and ICs

Daniel M. Fleetwood, Marty R. Shaneyfelt, F. W. Sexton, 1989 .

Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films

Robert M. Wallace, George A. Brown, Daniel M. Fleetwood, 1998 .

Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks

E. P. Gusev, Ronald D. Schrimpf, Daniel M. Fleetwood, 2003 .

Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 2000 .

BUSFET-a radiation-hardened SOI transistor

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 1999 .

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2004 .

Comparison of charge yield in MOS devices for different radiation sources

Marty R. Shaneyfelt, J. R. Schwank, P. Paillet, 2002 .

Generation of metastable electron traps in the near interfacial region of SOI buried Oxides by ion implantation and their effect on device properties

Daniel M. Fleetwood, Marty R. Shaneyfelt, J. R. Schwank, 2003 .

Theory and application of dual-transistor charge separation analysis

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1989 .

Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices

R. L. Pease, Marty R. Shaneyfelt, J. R. Schwank, 2003 .

Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors

Daniel M. Fleetwood, Marty R. Shaneyfelt, J. R. Schwank, 1994 .

Effects of interface traps and border traps on MOS postirradiation annealing response

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1995 .

A critical comparison of charge-pumping, dual-transistor, and midgap measurement techniques (MOS transistors)

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

Temperature effects on the radiation response of MOS devices

R. V. Jones, Daniel M. Fleetwood, F. W. Sexton, 1988 .

New insights into fully-depleted SOI transistor response after total-dose irradiation

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

Impact of aging on radiation hardness[CMOS SRAMs]

R. L. Pease, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1997 .