K. Yodoshi

Monolithic Four-Beam Semiconductor Laser Array With Built-In Monitoring Photodiodes

Yasuaki Inoue, Tsutomu Yamaguchi, K. Yodoshi, 1989, Photonics West - Lasers and Applications in Science and Engineering.

100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays

Yasuaki Inoue, Koji Tominaga, Takao Yamaguchi, 1991, Photonics West - Lasers and Applications in Science and Engineering.

Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source

Yasuaki Inoue, Koji Tominaga, Takao Yamaguchi, 1992, Photonics West - Lasers and Applications in Science and Engineering.

The influence of SiN films on negative bias temperature instability and characteristics in MOSFET's

Y. Matsushita, K. Yodoshi, Atsuhiro Nishida, 1998, ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157).

Fundamental transverse mode 100-mW semiconductor laser with high reliability

Yasuaki Inoue, Takao Yamaguchi, K. Yodoshi, 1990, Photonics West - Lasers and Applications in Science and Engineering.

GaAs buried heterostructure vertical cavity top-surface emitting lasers

K. Yodoshi, Tatsuhiko Niina, A. Ibaraki, 1991 .

AlGaInP visible laser diodes grown on misoriented substrates

K. Yodoshi, Hiroki Hamada, S. Honda, 1991 .

AlGaInP visible laser diodes grown on misoriented substrates

K. Yodoshi, Hiroki Hamada, S. Honda, 1990, 12th IEEE International Conference on Semiconductor Laser.

High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets

K. Yodoshi, Hiroki Hamada, S. Honda, 1991 .

High-power operation of 635-nm transverse-mode stabilized AlGaInP laser diodes with current-blocking region near the facets

K. Yodoshi, Hiroki Hamada, S. Honda, 1991 .

Low-threshold 630 nm-band AlGaInP multiquantum-well laser diodes grown on misoriented substrates

K. Yodoshi, Hiroki Hamada, S. Honda, 1992 .

AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/