Dominique Vuillaume

发表

On the crucial role of the insulator-semiconductor interface in organic thin-film transistors

Gilles Horowitz, Mohammad Mottaghi, Philippe Lang, 2006, SPIE Optics + Photonics.

Properties of hot carrier induced traps in MOSFETs characterized by the floating-gate technique

Dominique Vuillaume, Brian S. Doyle, 1992 .

An organic-nanoparticle transistor behaving as a spiking synapse

Stéphane Pleutin, Christian Gamrat, Dominique Vuillaume, 2008 .

Cation discrimination in organic electrochemical transistors by dual frequency sensing

Dominique Vuillaume, Fabien Alibart, David Guerin, 2018, Organic Electronics.

Properties of electronic traps at silicon/1-octadecene interfaces

Dominique Vuillaume, Corinne Miramond, D. Vuillaume, 2001 .

Analytical Model for Molecular-Scale Charge Transport †

Dominique Vuillaume, Robert M. Metzger, Ian R. Peterson, 2001 .

Study of defects induced by high-electric-field stress into a thin gate oxide (11 nm) of metal-oxide-semiconductor capacitors

Dominique Vuillaume, C. Petit, M. Jourdain, 1993 .

TEMPERATURE-DEPENDENT STUDY OF SPIN-DEPENDENT RECOMBINATION AT SILICON DANGLING BONDS

Dominique Vuillaume, D. Vuillaume, D. Deresmes, 1994 .

Low‐Operating‐Voltage Organic Transistors Made of Bifunctional Self‐Assembled Monolayers

Gilles Horowitz, Dominique Vuillaume, Denis Tondelier, 2007 .

Oligothiophene-derivatized azobenzene as immobilized photoswitchable conjugated systems.

Dominique Vuillaume, Philippe Blanchard, Jean Roncali, 2010, Chemical communications.

Charging and discharging properties of electron traps created by hot‐carrier injections in gate oxide of n‐channel metal oxide semiconductor field effect transistor

Dominique Vuillaume, Alain Bravaix, 1993 .

The nature of interface states generated by high field injection

Dominique Vuillaume, 1993 .

Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

Dominique Vuillaume, Julien Borghetti, Vincent Derycke, 2006 .

New insights on the electronic properties of the trivalent silicon defects at oxidized 〈100〉 silicon surfaces

Didier Goguenheim, Dominique Vuillaume, G. Vincent, 1990 .

Nature of the defects generated by electric field stress at the Si‐SiO2 interface

Didier Goguenheim, Dominique Vuillaume, Jacques Bourgoin, 1991 .

Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices

B. DeSalvo, L. Perniola, Olivier Bichler, 2013 .

Electrolyte-gated organic synapse transistor interfaced with neurons

Dominique Vuillaume, Tobias Cramer, Fabio Biscarini, 2016, 1608.01191.

Sub-ppm detection of nerve agents using chemically functionalized silicon nanoribbon field-effect transistors.

Dominique Vuillaume, Simon Clavaguera, Stéphane Lenfant, 2010, Angewandte Chemie.

Morphology-dependent electric transport in textured ultrathin Al films grown on Si

Dominique Vuillaume, S. K. Gupta, K. P. Muthe, 2005 .

Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures

Rachid Bouchakour, Dominique Vuillaume, M. Jourdain, 1993 .

Experiments and modeling to determine trapped holes and slow states in Fowler-Nordheim stressed MOS capacitors

Dominique Vuillaume, B. Sagnes, K. Yckache, 1995 .

High-speed programming of nanowire-gated carbon-nanotube memory devices.

Dominique Vuillaume, Guillaume Agnus, Vincent Derycke, 2010, Small.

Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

Dominique Vuillaume, D. Vuillaume, A. Chapoton, 2000 .

UNIMOLECULAR ELECTRICAL RECTIFICATION IN HEXADECYLQUINOLINIUM TRICYANOQUINODIMETHANIDE

Jeffrey W. Baldwin, Bo Chen, Dominique Vuillaume, 1997 .

Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies

Dominique Vuillaume, M. Jourdain, D. Vuillaume, 1999 .

Thiolate chemistry: a powerful and versatile synthetic tool for immobilization/functionalization of oligothiophenes on a gold surface.

Dominique Vuillaume, Philippe Blanchard, Jean Roncali, 2011, Chemistry.

Large array of sub-10-nm single-grain Au nanodots for use in nanotechnology.

Gilles Patriarche, Dominique Vuillaume, Akira Fujiwara, 2011, Small.

Silicon−Molecules−Metal Junctions by Transfer Printing: Chemical Synthesis and Electrical Properties

C. Merckling, Dominique Vuillaume, Xavier Wallart, 2007 .

Organic insulating films of nanometer thicknesses

Dominique Vuillaume, D. Vuillaume, F. Rondelez, 1996 .

Nanotube transistors as direct probes of the trap dynamics at dielectric-organic interfaces of interest in organic electronics and solar cells.

Dominique Vuillaume, Vincent Derycke, Arianna Filoramo, 2008, Nano letters.

Electron Transfer through a Monolayer of Hexadecylquinolinium Tricyanoquinodimethanide

Dominique Vuillaume, Robert M. Metzger, Bo Chen, 1999 .

Nano-field effect transistor with an organic self-assembled monolayer as gate insulator

Dominique Vuillaume, D. Vuillaume, J. Collet, 1998 .

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

Didier Goguenheim, Dominique Vuillaume, Alain Bravaix, 1997 .

Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor

Dominique Vuillaume, C. Petit, D. Zander, 2008 .

A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's

Dominique Vuillaume, Alain Boudou, Alain Bravaix, 1993 .

Nature of the mechanism of interface state creation on electrically stressed metal‐oxide‐semiconductors structures

Dominique Vuillaume, 1991 .

Improved Reliability With a New Plasma Nh3 Process for 0.35μιη P+ Poly-Gate Nitrided Oxide P-Mosfet's

M. Haond, Didier Goguenheim, Dominique Vuillaume, 1996 .

An improved theory of spin dependent recombination: application to the P b center at the Si-SiO 2 interface

Dominique Vuillaume, Michel Lannoo, Didier Stiévenard, 1993 .

1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping

Dominique Vuillaume, Corinne Miramond, D. Vuillaume, 2004 .

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

Didier Goguenheim, Dominique Vuillaume, Alain Bravaix, 1999 .

Optical spectroscopy and field‐enhanced emission of an oxide trap induced by hot‐hole injection in a silicon metal‐oxide‐semiconductor field‐effect transistor

M. Bourcerie, Dominique Vuillaume, Alain Boudou, 1989 .

A tunnel current in self-assembled monolayers of 3-mercaptopropyltrimethoxysilane.

Dominique Vuillaume, David Guerin, D. K. Aswal, 2005, Small.

High on-off conductance switching ratio in optically-driven self-assembled conjugated molecular systems.

Dominique Vuillaume, Philippe Blanchard, Jean Roncali, 2010, ACS nano.

Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation

P. Mortini, Didier Goguenheim, Nathalie Revil, 1997 .

Two‐Terminal Carbon Nanotube Programmable Devices for Adaptive Architectures

Weisheng Zhao, Yves Lhuillier, Christian Gamrat, 2010, Advanced materials.

The metal/organic monolayer interface in molecular electronic devices

Dominique Vuillaume, Stéphane Lenfant, D. Vuillaume, 2003 .