Masami Tokumitsu

发表

Pre-amplifier integrated uni-travelling-carrier photodiode module for operation in 120 GHz band

Tadao Nagatsuma, Hiroshi Ito, Akihiko Hirata, 2005 .

40 Gbit/s/ch 2 × 2 switch IC using InP HEMTs

Masahiro Muraguchi, Masami Tokumitsu, H. Kamitsuna, 2005 .

WSiN self-aligned GaAs-MESFET technology : Ultra-high-speed compound semiconductor ICs

Masami Tokumitsu, Yasuro Yamane, Kimiyoshi Yamasaki, 1996 .

An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform

Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, 2016, IEICE Trans. Electron..

Folded U-shaped microwire technology for ultra-compact 3D MMICs

Ichihiko Toyoda, Tsuneo Tokumitsu, Kiyomitsu Onodera, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

Tetsuya Suemitsu, Gaudenzio Meneghesso, Enrico Zanoni, 2006, IEICE Electron. Express.

Three-dimensional MMIC technology for low-cost millimeter-wave MMICs

Kenjiro Nishikawa, Ichihiko Toyoda, K. Kamogawa, 2001 .

D-band rectangular-waveguide-output uni-travelling-carrier photodiode module

Tomofumi Furuta, Yoshifumi Muramoto, Masami Tokumitsu, 2005 .

Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band

Tadao Nagatsuma, Yasuhiro Sato, Hiroshi Ito, 2005, IEICE Electron. Express.

A Very Low Power Dissipation Front-End MMIC for L-Band Receivers

Masahiro Muraguchi, Masami Tokumitsu, 1992, 1992 22nd European Microwave Conference.

A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation

Hideyuki Nosaka, Kimikazu Sano, Masahiro Muraguchi, 2005, IEICE Trans. Electron..

A 35ps Ripple Carry Josephson Adder with Latch Using High Gain Direct Coupled Logic Gates

Akira Ishida, Masami Tokumitsu, Kohji Hohkawa, 1983 .

A 22-Gbit/s Static Decision IC Made with a Novel D-Type Flip-Flop

Koichi Narahara, Masami Tokumitsu, Taiichi Otsuji, 1999 .

ICs for 100 Gbit/s Data Transmission

Koichi Murata, Masami Tokumitsu, Takatomo Enoki, 2003 .

Electrical PMD Equalizer ICs for 40-Gbit/s Optical Transmissions

Hideyuki Nosaka, Masami Tokumitsu, Makoto Nakamura, 2004 .

A high‐speed AC power clock for josephson logic circuits

Masami Tokumitsu, Yasuo Tazoh, Masanobu Ohhata, 1987 .

InP HEMT Technology for High-Speed Logic and Communications

Tetsuya Suemitsu, Masami Tokumitsu, 2007, IEICE Trans. Electron..

Three-Dimensional Passive Elements for Compact GaAs MMICs (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)

Ichihiko Toyoda, Kenjiro Nishikawa, Masami Tokumitsu, 1993 .

A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs

Koichi Murata, Masami Tokumitsu, Mikio Yoneyama, 1997 .

Quick Development of Multifunctional MMICs by Using Three-Dimensional Masterslice MMIC Technology

Ichihiko Toyoda, Kenjiro Nishikawa, Masami Tokumitsu, 1999 .

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs

Hideaki Matsuzaki, Takashi Maruyama, Masami Tokumitsu, 2006, IEICE Trans. Electron..

C-10-7 A 40G decision feedback equalizer IC using InP HBT

Makoto Nakamura, Koichi Murata, Masami Tokumitsu, 2007 .

A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs

Masami Tokumitsu, Kimiyoshi Yamasaki, Fumiaki Hyuga, 1995 .

New methodology for microwave/millimeter-wave MMIC development

Ichihiko Toyoda, Masahiro Muraguchi, Kenjiro Nishikawa, 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's

Masami Tokumitsu, Mikio Yoneyama, Taiichi Otsuji, 1998, IEEE J. Solid State Circuits.

High-performance 0.1 /spl mu/m-self-aligned-gate GaAs MESFET technology

Masami Tokumitsu, K. Yamasaki, Shinji Aoyama, 1997 .

A 31 GHz static frequency divider using Au/WSiN gate GaAs MESFETs

Masami Tokumitsu, K. Onodera, H. Sutoh, 1991 .

10 GHz bandwidth 20 dB gain low-noise direct-coupled amplifier ICs using Au/WSiN GaAs MESFET

Masami Tokumitsu, Yuhki Imai, K. Onodera, 1990 .

Effects of neutral buried p-layer on high-frequency performance of GaAs MESFETs

M. Tomizawa, Masami Tokumitsu, K. Onodera, 1991 .

Controllability of Novel Microbumps Using Interlaminated Tin and Gold Layers for Flip-Chip Interconnection

Masami Tokumitsu, Shinji Aoyama, Takao Ishii, 2003 .

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Toshihiko Kosugi, Masami Tokumitsu, Hiroki Sugiyama, 2007 .