C. F. Chen

180nm Sn-doped Ge/sub 2/Sb/sub 2/Te/sub 5/ chalcogenide phase-change memory device for low power, high speed embedded memory for SoC applications

Chen-Yi Lee, S. L. Lung, C. T. Chen, 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

Multi-layer sidewall WOX resistive memory suitable for 3D ReRAM

Y. Y. Lin, C. F. Chen, E. Lai, 2012, 2012 Symposium on VLSI Technology (VLSIT).

High-Speed Multilevel Resistive RAM using RTO WO X

K. Y. Hsieh, S. C. Tsai, Yeong-Der Yao, 2009 .

References

S. O. Park, C. F. Chen, I. Baek, 1976 .