S. V. Danylyuk

发表

GROUP 111 NITRIDES-BASED FIELD ON THE OPERATING PARAMETERS OF EFFECT TRANSISTORS

A. E. Belyaev, R V Konakova, Mykhaylo Petrychuk, 2002 .

The investigation of properties of electron transport in AlGaN/GaN heterostructures

Alexei Vertiatchikh, Vinayak Tilak, Lester F. Eastman, 2003, Microelectron. J..

Transport processes in AlGaN/GaN resonant tunnelling structures analysed by noise spectra

A. E. Belyaev, A. M. Kurakin, Svetlana Vitusevich, 2008 .

Low‐Frequency Noise in AlGaN/GaN High Electron Mobility Transistors Irradiated by γ‐Ray Quanta

Lester F. Eastman, A. E. Belyaev, Svetlana Vitusevich, 2003 .

Nonlinear charging effect of quantum dots in a p-i-n diode

Eckehard Schöll, Andreas Wacker, Mohamed Henini, 2003 .

Double injection currents in p-i-n diodes incorporating self-assembled quantum dots

Mohamed Henini, A. E. Belyaev, S. V. Danylyuk, 2001 .

Excess low-frequency noise in AlGaN'GaN-based high-electron-mobility transistors

Lester F. Eastman, A. E. Belyaev, Svetlana Vitusevich, 2002 .

Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures

A. E. Belyaev, Svetlana Vitusevich, S. V. Danylyuk, 2003 .

Low-frequency noise in AlGaN/GaN HEMT structures with AlN thin film layer

A. E. Belyaev, A. M. Kurakin, Svetlana Vitusevich, 2006 .