Junghyun Sok

发表

Fabrication of nc-Si/SiO₂ Multi-Layer Structure by using LPCVD

Soonjae Jung, Eunkyeom Kim, Chan Park, 2005 .

Si-nanocrystalline nonvolatile floating gate memory device based on Schottky Barrier Tunneling Transistor

Tae-Youb Kim, Jungho Kim, Eunkyeom Kim, 2007 .

Memory characteristics of MOS with doubly stacked silicon nanocrystals

Jeong-Ho Kim, Eunkyeom Kim, Moonsup Han, 2007 .

Tunneling magnetoresistence characteristics of CoFeB/MgO/Py magnetic tunnel junctions

Kyoung-Min Lee, Byoung-Chul Min, Junghyun Sok, 2013 .

Silicon Nanocrystal Non-volatile Floating Gate Memory Devices By Using Schottky Barrier Source/Drain (S/D) Structure

Tae-Youb Kim, Jungho Kim, Eunkyeom Kim, 2008 .

Directly coupled DC-SQUIDs of YBCO step-edge junctions fabricated by a chemical etching process operating at 77 K

Junghyun Sok, Jo-Won Lee, Eun-Hong Lee, 1997, IEEE Transactions on Applied Superconductivity.