Kyoungwan Park

Fabrication of nc-Si/SiO₂ Multi-Layer Structure by using LPCVD

Soonjae Jung, Eunkyeom Kim, Chan Park, 2005 .

Si-nanocrystalline nonvolatile floating gate memory device based on Schottky Barrier Tunneling Transistor

Tae-Youb Kim, Jungho Kim, Eunkyeom Kim, 2007 .

Memory characteristics of MOS with doubly stacked silicon nanocrystals

Jeong-Ho Kim, Eunkyeom Kim, Moonsup Han, 2007 .

Silicon Nanocrystal Non-volatile Floating Gate Memory Devices By Using Schottky Barrier Source/Drain (S/D) Structure

Tae-Youb Kim, Jungho Kim, Eunkyeom Kim, 2008 .

Nonvolatile Memory Characteristics of Double-Stacked Si Nanocluster Floating Gate Transistor

Eunkyeom Kim, Kyoungwan Park, Jeongho Kim, 2008 .

Novel properties of erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect- transistors

Kyoungwan Park, Jae-Heon Shin, Yarkyeon Kim, 2004 .