W. Kim

Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation

S. Ambrogio, A. Sebastian, T. Yamashita, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

A novel low power phase change memory using inter-granular switching

H. L. Lung, S. Kim, Y. Zhu, 2016, 2016 IEEE Symposium on VLSI Technology.

Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning

S. Ambrogio, K. Suu, J. Bruley, 2019, 2019 Symposium on VLSI Technology.

Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory

K. Suu, S. Kim, Y. Zhu, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material

H. L. Lung, M. BrightSky, Y. Zhu, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM

F. M. Lee, M. BrightSky, Y. Zhu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).