Lezhi Wang

Tuning the pinning direction of giant magnetoresistive sensor by post annealing process

Weisheng Zhao, Shaohua Yan, Qunwen Leng, 2021, Science China Information Sciences.

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Zhaohao Wang, He Zhang, Weisheng Zhao, 2018, 1804.11025.

Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect

Weisheng Zhao, Youguang Zhang, Kang L. Wang, 2017, IEEE Transactions on Electron Devices.

Novel metallization processes for sub-100 nm magnetic tunnel junction devices

Junjie Li, Weisheng Zhao, Youguang Zhang, 2019, Microelectronic Engineering.