Yasunori Tanaka

发表

Introduction to the Special Issue on the APSPT-11

Kungen Teii, Hiroshi Akatsuka, Yasunori Tanaka, 2021 .

14.6 mΩcm2 3.3 kV DIMOSFET on 4H-SiC (000-1)

Takuma Suzuki, Masaru Furukawa, Keiko Ariyoshi, 2014 .

1270V, 1.21mΩ·cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Tsutomu Yatsuo, Koji Yano, Akio Takatsuka, 2008 .

Thomson scattering diagnostics of decay processes of Ar/SF6 gas-blast arcs confined by a nozzle

Takeshi Shinkai, Toshiyuki Uchii, Kiichiro Uchino, 2013 .

Synthesis of fullerenes from carbon powder by using high power induction thermal plasma

Tadahiro Sakuta, Hirofumi Takikawa, C. Wang, 2001 .

Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mΩ•cm2

Kenji Fukuda, Tsutomu Yatsuo, Koji Yano, 2006 .

An Analysis Method of Device losses in Combination of SiC-PiN Diode and Si-IEGT

Hiromichi Ohashi, Kazuma Suzuki, Kyungmin Sung, 2005 .

Thermodynamic and Transport Properties of Ar Thermal Plasmas with Polymer Ablated Vapors and Influence of Their Inclusions on Plasma Temperature

Shigemitsu Okabe, Shuhei Kaneko, Toru Numada, 2005 .

980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors

Tsutomu Yatsuo, Koji Yano, Akio Takatsuka, 2011 .

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)

Tsutomu Yatsuo, Koji Yano, Akio Takatsuka, 2009 .

First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method

Tsutomu Yatsuo, Ryoji Kosugi, Hajime Okumura, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs

Keiko Ariyoshi, Shinsuke Harada, Hajime Okumura, 2015 .

Transient Nature of Argon and Molecular Gas-Seeded Argon Inductive Thermal Plasmas in Pulse Amplitude Modulation Approach

Tadahiro Sakuta, Yasunori Tanaka, Yasunori Tanaka, 2003 .

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

Kenji Fukuda, Toshihiko Hayashi, Makoto Mizukami, 2014 .

Temperature control of Ar induction thermal plasma with diatomic molecular gases by pulse amplitude modulation of the coil current

Tadahiro Sakuta, Yasunori Tanaka, 2003 .

Fundamental Investigation Technique on Gas-blast Arc Behaviors in Decaying and Re-ignition Processes using Power Semiconductors

Katsumi Suzuki, Takayasu Fujino, Kentaro Tomita, 2015 .

Gas Flow Simulation of GCB Chambers Featuring Hot Gas Energy

Hiromichi Kawano, Katsuharu Iwamoto, Yasunori Tanaka, 2004 .

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Hajime Okumura, Hironori Yoshioka, Yasunori Tanaka, 2014 .

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)

Tsutomu Yatsuo, Koji Yano, Akio Takatsuka, 2008 .

1200 V, 35 A SiC-BGSIT with improved blocking gain of 480

Tsutomu Yatsuo, Koji Yano, Akio Takatsuka, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Numerical Simulation on Quenching Process of Carbon Dioxide Arcs with Hydrogen Gas Inclusion in Different Nozzle Shapes

Shigemitsu Okabe, Shuhei Kaneko, Yoshihiko Uesugi, 2013 .

Fabrication of 1.4-kV mesa-type p+–n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Kenji Fukuda, Tsutomu Yatsuo, Shin-ichi Nishizawa, 2003 .

3-Level power converter with high-voltage SiC-PiN diode and hard-gate-driving of IEGT for future high-voltage power conversion systems

Keiji Wada, Kazuto Takao, Hiromichi Ohashi, 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

Modeling of Ar Induction Thermal Plasma with an Injection of PTFE Powder

Tadahiro Sakuta, Yasunori Tanaka, Yasunori Tanaka, 2003 .

Optimum Combination of SiC-diodes and Si-switching Devices in High Power Application

Hiromichi Ohashi, Kyungmin Sung, Masamu Kamaga, 2006 .

Ultrahigh voltage SiC bipolar devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Plasma Quenching Effect of Different Environmentally-benign Gases at Atmospheric Pressure using ICTP Technique

Tadahiro Sakuta, Yasunori Tanaka, 2001 .

Extension of the operational regime of the LHD towards a deuterium experiment

Akio Sanpei, Sadao Masamune, Naoki Mizuguchi, 2017 .

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2015, IEEE Transactions on Electron Devices.

3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field

Yusuke Kobayashi, Keiko Ariyoshi, Shinsuke Harada, 2016, IEEE Electron Device Letters.

Switching characteristic of Si-IEGTs and SiC-PiN diodes pair connected in series

Kazuto Takao, Hiromichi Ohashi, Takeo Kanai, 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

Stable operation region and dynamic behavior of Ar pulse-modulated induction thermal plasma with different molecular gases

Tadahiro Sakuta, Yasunori Tanaka, 2003 .

Transient Response Simulation of Downstream Thermofluid Field in a Gas Circuit Breaker during Current Interruption

Hiromichi Kawano, Toshiyuki Uchii, Hideya Nishiyama, 2005 .

Hot-Implantation of Phosphorus Ions into 4H-SiC

Kenji Fukuda, Seiji Imai, Takashi Shinohe, 2000 .

Investigation on plasma-quenching efficiency of various gases using the inductively coupled thermal plasma technique: effect of various gas injection on Ar thermal ICP

Tadahiro Sakuta, Yasunori Tanaka, Yasunori Tanaka, 2002 .

Investigation on Effective Ionization Coefficient and Critical Electric Field in Air in Temperature Range of 300-3500K by Solving Boltzmann Equation

Tadahiro Sakuta, Masatoyo Shibuya, Yasunori Tanaka, 2003 .

HVDC system for a data center equipped with SiC power devices

Masato Mino, Tamotsu Ninomiya, Mikio Yamasaki, 2011, 2011 1st International Conference on Electric Power Equipment - Switching Technology.

Development of semiconductor switches (SiC-BGSIT) applied for DC circuit breakers

Yukihiko Sato, Hiromichi Ohashi, Tsutomu Yatsuo, 2013, 2013 2nd International Conference on Electric Power Equipment - Switching Technology (ICEPE-ST).

Prediction of dielectric properties of N2/O2 mixtures in the temperature range of 300–3500 K

Yasunori Tanaka, Yasunori Tanaka, 2004 .

Development of a chemically non-equilibrium model on decaying SF6 arc plasmas

Yasunori Tanaka, Yasunori Tanaka, Katsumi Suzuki, 2011, 2011 1st International Conference on Electric Power Equipment - Switching Technology.