Olivier Toublan

发表

Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation

Gilles L. Fanget, Alexandra Barberet, Peter D. Buck, 2002, SPIE Photomask Technology.

New approach to PEB mechanisms in novolac-DNQ resists: influence of physical and viscoelastic properties

Olivier Toublan, Helene Peloso, Alain Prola, 1997, Advanced Lithography.

SRAF enhancement using inverse lithography for 32nm hole patterning and beyond

Yorick Trouiller, Olivier Toublan, Vincent Farys, 2009, Photomask Technology.

Phase aware proximity correction for advanced masks

Franklin M. Schellenberg, Yuri Granik, Patrick Schiavone, 2000, Advanced Lithography.

Application of a new approach to optical proximity correction

Wolfram Ziegler, Patrick Schiavone, Olivier Toublan, 1999, Advanced Lithography.

Detailed process analysis for sub-resolution assist features introduction

Olivier Toublan, Rainer Zimmermann, Andreas Torsy, 2004, SPIE Advanced Lithography.

OPC beyond 0.18 μm: OPC on PSM gates

Olivier Toublan, Susan S. MacDonald, Franklin M. Schellenberg, 2000, Advanced Lithography.

Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Jean-Damien Chapon, Patrick Schiavone, Frank Sundermann, 2002, SPIE Advanced Lithography.

Correction of long-range effects applied to the 65-nm node

Jean-Damien Chapon, Jerome Belledent, Stanislas Baron, 2005, Photomask Japan.

(Sub-)100nm gate patterning using 248nm alternating PSM

Patrick Jaenen, Kurt G. Ronse, Olivier Toublan, 2001 .

Adoption of OPC and the Impact on Design and Layout

Franklin M. Schellenberg, Olivier Toublan, Luigi Capodieci, 2001, DAC.

Evaluation of OPC mask printing with a raster scan pattern generator

Frank E. Abboud, Olivier Toublan, Frederick Raymond, 2002, SPIE Advanced Lithography.

Process optimization of a negative-tone CVD photoresist for 193-nm lithography applications

Cedric Monget, Olivier Joubert, Timothy W. Weidman, 1999, Advanced Lithography.

Critical failure ORC: application to the 90-nm and 65-nm nodes

Jerome Belledent, Christophe Couderc, Frank Sundermann, 2004, SPIE Advanced Lithography.

Fully automatic side lobe detection and correction technique for attenuated phase-shift masks

Emile Sahouria, Olivier Toublan, Nicolas B. Cobb, 2001, SPIE Advanced Lithography.

Improvement of empirical OPC model robustness using full-chip aerial image analysis

Olivier Toublan, Thomas Roessler, Beate Frankowsky, 2003, SPIE Photomask Technology.

Combining OPC and design for printability into 65-nm logic designs

Kevin D. Lucas, Jonathan L. Cobb, Robert Boone, 2004, SPIE Advanced Lithography.

The influence of calibration pattern coverage for lumped parameter resist models on OPC convergence

Shumay Shang, Olivier Toublan, Martin Niehoff, 2006, SPIE Advanced Lithography.

Assessment of complementary double dipole lithography for 45nm and 32nm technologies

Andres Torres, Sergei V. Postnikov, Philippe Thony, 2004, SPIE Advanced Lithography.

Process, design and optical proximity correction requirements for the 65nm device generation

Vincent Wiaux, Geert Vandenberghe, Will Conley, 2003, SPIE Advanced Lithography.

Full chip model based correction of flare-induced linewidth variation

Yuri Granik, Jerome Belledent, James Word, 2004, SPIE Advanced Lithography.

Using the CODE technique to print complex two-dimensional structures in a 90-nm ground rule process

Patrick Schiavone, Olivier Toublan, Yves Rody, 2003, SPIE Advanced Lithography.

Accurate mask model for advanced nodes

Isabelle Schanen, Frank Sundermann, Ingo Bork, 2014, Photomask and Next Generation Lithography Mask Technology.

Flare impact on the intrafield CD control for sub-0.25-μm patterning

Patrick Schiavone, Olivier Toublan, André Weill, 1999, Advanced Lithography.

Effects of advanced illumination schemes on design manufacturability and interactions with optical proximity corrections

Yuri Granik, Uwe Hollerbach, Robert John Socha, 2000 .

Application of the hybrid Hopkins-Abbe method in full-chip OPC

Konstantinos Adam, Nick Cobb, Michael C. Lam, 2009 .

Reducing or eliminating line-end shortening and iso/dense bias by tuning NA and sigma

Patrick Schiavone, Olivier Toublan, 1998, Advanced Lithography.

Full-chip Process Simulation for Silicon DRC

Yuri Granik, Emile Sahouria, Olivier Toublan, 2000 .

Investigation of model-based physical design restrictions (Invited Paper)

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2005, SPIE Advanced Lithography.

Complementary double-exposure technique (CODE): a way to print 80- and 65-nm gate levels using a double-exposure binary mask approach

Patrick Schiavone, Olivier Toublan, Yves Rody, 2004 .

Leap ahead in mask data processing for technology nodes below 130 nm

Olivier Toublan, Yves Rody, Yorick Trouiller, 2002, SPIE Photomask Technology.

Adjustment of optical proximity correction (OPC) software for mask process correction (MPC): Module 2. Lithography simulation based on optical mask writing tool simulation

Gilles L. Fanget, Alexandra Barberet, Peter D. Buck, 2002, Photomask Japan.

New approach to optical proximity correction

Wolfram Ziegler, Patrick Schiavone, Olivier Toublan, 1998, Photomask Technology.

Subresolution process windows and yield estimation technique based on detailed full-chip CD simulation

Yuri Granik, Robert John Socha, Emile Sahouria, 2000, SPIE Advanced Lithography.

Design verification flow for model-assisted double-dipole decomposition

Franklin M. Schellenberg, Olivier Toublan, Juan Andres Torres, 2002, SPIE Advanced Lithography.

Layout compensation for EUV flare

Franklin M. Schellenberg, James Word, Olivier Toublan, 2005, SPIE Advanced Lithography.

(Sub-) 100-nm gate patterning using 248-nm alternating PSM

Geert Vandenberghe, Patrick Jaenen, Kurt G. Ronse, 2001, Photomask Japan.

Reverse engineering source polarization error

Travis Brist, Olivier Toublan, Kostas Adam, 2005, SPIE Photomask Technology.

CVD photoresist performance for 248-nm lithography

Cedric Monget, Timothy W. Weidman, Olivier Toublan, 1999, Advanced Lithography.

Model-assisted double dipole decomposition

Franklin M. Schellenberg, Andres Torres, Olivier Toublan, 2002, SPIE Advanced Lithography.

Full-chip-model-based correction of flare-induced linewidth variation

Yuri Granik, Jerome Belledent, James Word, 2004, SPIE Photomask Technology.

Phase and transmission errors aware OPC solution for PSM: feasability demonstration

Emile Sahouria, Olivier Toublan, Nicolas B. Cobb, 2001, SPIE Photomask Technology.

Logic design for printability using OPC methods

Kevin Lucas, Karl Wimmer, Olivier Toublan, 2006, IEEE Design & Test of Computers.

Complementary Double Exposure Technique (CODE) solutions to the two-dimensional structures of the 90nm node

Patrick Schiavone, Olivier Toublan, Yorick Trouiller, 2002, Photomask Technology.

Résumés de thèse

Olivier Toublan, Marie-Chantal Pons, Marc Brelot, 1999, Ann. des Télécommunications.

Reticle enhancement verification for the 65nm and 45nm nodes

Robert Boone, Jerome Belledent, Kevin Lucas, 2006, SPIE Advanced Lithography.

High accuracy 65nm OPC verification: full process window model vs. critical failure ORC

Jerome Belledent, Stanislas Baron, Kevin Lucas, 2004, SPIE Advanced Lithography.

LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

Hiroyuki Miyashita, Olivier Toublan, Xavier Buch, 2010, Advanced Lithography.

New process monitor for reticles and wafers: the MEEF meter

Franklin M. Schellenberg, Olivier Toublan, Geoffrey T. Anderson, 2000, Advanced Lithography.