Heiji Watanabe

发表

A Pixel Design of a Branching Ultra-Highspeed Image Sensor

Edoardo Charbon, Kohsei Takehara, Kazuhiro Shimonomura, 2021, Sensors.

Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System

Shinji Matsui, Yukinori Ochiai, Masakazu Baba, 1991 .

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices

Yuki Nakano, Takayoshi Shimura, Takuji Hosoi, 2012 .

KINETICS OF INITIAL LAYER-BY-LAYER OXIDATION OF SI(001) SURFACES

Kiyoyuki Terakura, Masakazu Ichikawa, Tsuyoshi Uda, 1998 .

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Satoshi Nakazawa, Yoshiharu Anda, 2017 .

Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization

Hiroshi Oka, Takayoshi Shimura, Takuji Hosoi, 2018 .

Nanolithography Developed Through Electron-Beam-Induced Surface Reaction

Shinji Matsui, Yukinori Ochiai, Masakazu Baba, 1995 .

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

Hideki Sako, Shingo Ogawa, Ichiko Yamada, 2015 .

Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films

Masakazu Ichikawa, Ken Fujita, Heiji Watanabe, 1997 .

Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy

Masakazu Ichikawa, Ken Fujita, Heiji Watanabe, 1998 .

Sub‐10 nm lithography and development properties of inorganic resist by scanning electron beam

Jaw-Shen Tsai, Shinji Matsui, Jun-ichi Fujita, 1995 .

Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy

Susumu Fukatsu, Takayoshi Shimura, Takuji Hosoi, 2014 .

Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, 2013 .

Characterization of local dielectric breakdown in ultrathin SiO2 films using scanning tunneling microscopy and spectroscopy

Masakazu Ichikawa, Toshio Baba, Heiji Watanabe, 1999 .

Characteristics of Fielo-GaN Grown by Hydride Vapor Phase Epitaxy

Masashi Mizuta, Akira Usui, Haruo Sunakawa, 2000 .

Demonstration of mm long nearly intrinsic GeSn single-crystalline wires on quartz substrate fabricated by nucleation-controlled liquid-phase crystallization

Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, 2019, Japanese Journal of Applied Physics.

Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy

Takashi Ando, Alessandro C. Callegari, Andrew J. Kellock, 2010 .

Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface

Akitaka Yoshigoe, Yuden Teraoka, Yuki Nakano, 2012 .

Hard x-ray phase contrast imaging using a tabletop Talbot-Lau interferometer with multiline embedded x-ray targets.

Kazuhiko Omote, Jimpei Harada, Takayoshi Shimura, 2013, Optics letters.

Excellent electrical properties of TiO2∕HfSiO∕SiO2 layered higher-k gate dielectrics with sub-1nm equivalent oxide thickness

Takashi Minami, Hiroaki Arimura, Yuichi Naitou, 2008 .

Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

Kikuo Yamabe, Yasuo Nara, Kenji Shiraishi, 2006 .

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

Yuki Nakano, Takayoshi Shimura, Takuji Hosoi, 2013 .

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

Takahiro Yamada, Satoshi Nakazawa, Tetsuzo Ueda, 2016 .

X-ray phase contrast imaging by compact Talbot-Lau interferometer with a single transmission grating.

Jimpei Harada, Takayoshi Shimura, Takuji Hosoi, 2014, Optics letters.

Design and demonstration of phase gratings for 2D single grating interferometer.

Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, 2015, Optics express.

Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy

Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, 2015 .

Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure

Toru Tatsumi, Makoto Miyamura, Nobuyuki Ikarashi, 2004 .

Residual order in the thermal oxide of a fully strained SiGe alloy on Si

Yuki Okamoto, Tomoyuki Inoue, Takayoshi Shimura, 2010 .

Scanning tunneling microscopy and spectroscopy characterization of ion-beam-induced dielectric degradation in ultrathin SiO2 films and its thermal recovery process

Masakazu Ichikawa, Toshio Baba, Heiji Watanabe, 2000 .

Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Akitaka Yoshigoe, Yuden Teraoka, James R. Harries, 2011 .