G. Bose

发表

Experiment and Modeling of Schottky Device of Bulk Au/n-GaSb by Vertical Bridgeman Growth

Farida A. Ali, S. K. Kamilla, G. Bose, 2014 .

Simulation and Analysis of Interface Properties Due to Variation of Gate Oxide Thickness in Au/Al2O3/n-GaSb MOSCAP

Farida A. Ali, S. K. Kamilla, G. Bose, 2014 .

Structural and optical properties of RF magnetron sputtered aluminum nitride films without external substrate heating

Sudhir Chandra, G. Bose, Avanish Kumar Srivastava, 2011 .

Influence of nitrogen concentration on grain growth, structural and electrical properties of sputtered aluminum nitride films

Suneet Tuli, G. Bose, J. Kar, 2006 .

Deposition and characterization of c-axis oriented aluminum nitride films by radio frequency magnetron sputtering without external substrate heating

Sudhir Chandra, G. Bose, Atul Vir Singh, 2011 .

Correlation of electrical and morphological properties of sputtered aluminum nitride films with deposition temperature

Suneet Tuli, G. Bose, J. Kar, 2006 .

A study on the interface and bulk charge density of AlN films with sputtering pressure

Suneet Tuli, G. Bose, J. Kar, 2006 .

Influence of rapid thermal annealing on morphological and electrical properties of RF sputtered AlN films

Suneet Tuli, G. Bose, J. Kar, 2005 .