Nishrin Kachwala

发表

High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masks

Martin McCallum, John S. Petersen, Nishrin Kachwala, 2000, Advanced Lithography.

Designing dual-trench alternating phase-shift masks for 140-nm and smaller features using 248-nm KrF and 193-nm ArF lithography

Martin McCallum, John S. Petersen, J. Fung Chen, 1998, Photomask and Next Generation Lithography Mask Technology.

Integrating RET and mask manufacturability in memory designs for local interconnect for sub-100nm trenches

Travis Brist, Nishrin Kachwala, Walter Iandolo, 2005, SPIE Advanced Lithography.

Imaging contrast improvement for 160-nm line features using subresolution assist features with binary, six percent ternary attenuated phase-shift mask with process-tuned resist

Martin McCallum, John S. Petersen, Nishrin Kachwala, 1999, Advanced Lithography.

Integrating RET and mask manufacturability in designs for local interconnect for sub-100-nm trenches

Nishrin Kachwala, Travis E. Brist, Rick S. Farnbach, 2004, SPIE Photomask Technology.

Enhancements in rigorous simulation of light diffraction from phase-shift masks

Nishrin Kachwala, Andreas Erdmann, A. Erdmann, 2002, SPIE Advanced Lithography.

Assessment of a hypothetical road map that extends optical lithography through the 70-nm technology node

Ronald L. Gordon, Bruce W. Smith, Martin McCallum, 1999, Other Conferences.

Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node

Ronald L. Gordon, Bruce W. Smith, Martin McCallum, 1998, Photomask Technology.

Defect inspection and repair reticle (DIRRT) design for the 100-nm and sub-100-nm technology nodes

Nishrin Kachwala, Klaus Eisner, 2002, European Mask and Lithography Conference.

High-transmission attenuated PSM as a viable optical extension technique

Nishrin Kachwala, 2001, SPIE Advanced Lithography.

Imaging contrast improvement for 160nm line features using sub resolution assist features with binary, 6% ternary attenuated phase shift mask with process tuned resist

Martin McCallum, John S. Petersen, Nishrin Kachwala, 1999 .