Akira Toriumi

Akira Toriumi, 2000, 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353).

Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration

Akira Toriumi, Shinji Migita, Tsutomu Ikegami, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Room-temperature operation of multifunctional single-electron transistor logic

Ken Uchida, Akira Toriumi, Junji Koga, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors

Akira Toriumi, Junji Koga, Ryuji Ohba, 2001 .

Performance fluctuations of 0.10 /spl mu/m MOSFETs-limitation of 0.1 /spl mu/m ULSIs

Tsuyoshi Shibata, Akira Toriumi, Yukihiro Ushiku, 1994, Proceedings of 1994 VLSI Technology Symposium.

Different Contribution of Interface States and Substrate Impurities to Coulomb Scattering in Si MOS Inversion Layer

Shinichi Takagi, Akira Toriumi, Junji Koga, 1994 .

Band diagram and carrier conduction mechanism in ZrO/sub 2//Zr-silicate/Si MIS structure fabricated by pulsed-laser-ablation deposition

Akira Toriumi, Noburu Fukushima, Hideki Satake, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

Tomonori Nishimura, Akira Toriumi, Shinji Migita, 2018 .

0.1μm complementary metal–oxide–semiconductors and beyond

Akira Toriumi, 1996 .

Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics

Tomonori Nishimura, Akira Toriumi, Koji Kita, 2008 .

Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films

Shinichi Takagi, Akira Toriumi, Junji Koga, 1998 .

Electrical reliability and structural inhomogeneity of thermally grown SiO2

Akira Toriumi, Naoki Yasuda, Tetsufumi Tanamoto, 1997 .

Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K

Akira Toriumi, Kazuaki Nakajima, Akiko Ohata, 1995 .

Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

Tomonori Nishimura, Akira Toriumi, Takeaki Yajima, 2015, Nature Communications.

Experimental evidence of inelastic tunneling in stress-induced leakage current

Shinichi Takagi, Akira Toriumi, N. Yasuda, 1999 .

Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics

Tomonori Nishimura, Akira Toriumi, Choong Hyun Lee, 2009 .

SiO2 dielectric breakdown mechanism studied by the post-breakdown resistance statistics

Akira Toriumi, Hideki Satake, A. Toriumi, 2000 .

Correlation between two dielectric breakdown mechanisms in ultra‐thin gate oxides

Shinichi Takagi, Akira Toriumi, Naoki Yasuda, 1996 .

Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory

Ken Uchida, Akira Toriumi, Junji Koga, 2000 .

Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides

Akira Toriumi, Yuichiro Mitani, Yasushi Nakasaki, 2003 .

Sub-nm EOT ferroelectric HfO 2 on p+Ge with highly reliable field cycling properties

Akira Toriumi, Shinji Migita, Takeaki Yajima, 2017 .

Spectral shape analysis of infrared absorption of thermally grown silicon dioxide films

Shinichi Takagi, Akira Toriumi, Naoki Yasuda, 1997 .

Inverter performance of 0.10 /spl mu/m CMOS operating at room temperature

Akira Toriumi, Satoshi Inaba, Hiroaki Hazama, 1994 .

A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimes

Shinichi Takagi, Akira Toriumi, Junji Koga, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

Tomonori Nishimura, Akira Toriumi, Koji Kita, 2007 .

Direct observation of charge transfer region at interfaces in graphene devices

Hirokazu Fukidome, Maki Suemitsu, Akira Toriumi, 2013 .

Non-volatile Si quantum memory with self-aligned doubly-stacked dots

Ken Uchida, Akira Toriumi, Junji Koga, 2000 .

Re-consideration of influence of silicon wafer surface orientation on gate oxide reliability from TDDB statistics point of view

Akira Toriumi, Yuichiro Mitani, 2010, 2010 IEEE International Reliability Physics Symposium.

Experimental evidence for statistical‐inhomogeneous distributed dopant atoms in a Si metal‐oxide‐semiconductor field‐effect transistor

Akira Toriumi, Tomohisa Mizuno, 1995 .

A Percolation Approach to Dielectric Breakdown Statistics

Akira Toriumi, Tetsufumi Tanamoto, 1997 .

Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

Akira Toriumi, Kentaro Kyuno, Koji Kita, 2006 .

Ferroelectric phase stabilization of HfO2 by nitrogen doping

Tomonori Nishimura, Akira Toriumi, Shinji Migita, 2016 .

On the universality of inversion-layer mobility in n- and p-channel MOSFETs

Shinichi Takagi, Akira Toriumi, S. Takagi, 1988, Technical Digest., International Electron Devices Meeting.

Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization

Tomonori Nishimura, Akira Toriumi, Koji Kita, 2008 .

Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor

Tomonori Nishimura, Akira Toriumi, Koji Kita, 2010 .

Common origin for stress‐induced leakage current and electron trap generation in SiO2

Akira Toriumi, Hideki Satake, A. Toriumi, 1995 .

Experimental Demonstration of Higher-k Phase HfO2 Through Non-Equilibrium Thermal Treatment

Tomonori Nishimura, Akira Toriumi, Koji Kita, 2010 .

Characterization of inversion-layer capacitance of holes in Si MOSFET's

Shinichi Takagi, Akira Toriumi, S. Takagi, 1999 .

Structural advantages of silicon-on-insulator FETs over FinFETs in steep subthreshold-swing operation in ferroelectric-gate FETs

Akira Toriumi, Shinji Migita, Junichi Hattori, 2016 .

Limitations of the two-frequency capacitance measurement technique applied to ultra-thin SiO/sub 2/ gate oxides

Akira Toriumi, Naoki Yasuda, Hideki Satake, 2001, ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153).

Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor

Koji Akiyama, Akira Toriumi, Toshihide Nabatame, 2009 .

Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition

Akira Toriumi, Hitoshi Itoh, Yuichiro Mitani, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO2/Si Direct-Contact Gate Stacks

Akira Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .

Stress‐induced leakage current in ultrathin SiO2 films

Akira Toriumi, N. K. Patel, 1994 .

Negative differential conductance at room temperature in three-terminal silicon surface junction tunneling device

Akira Toriumi, Junji Koga, A. Toriumi, 1997 .

Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon

Akira Toriumi, Kentaro Kyuno, Koji Kita, 2005 .