Jianfeng Gao

Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM With Input-Dependent Sensing Control

Qi Liu, Xin Si, Yongpan Liu, 2021, IEEE Transactions on Circuits and Systems II: Express Briefs.

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2 Dielectric Using TaCl5 and TEA as Precursors

Chao Zhao, Jinjuan Xiang, Jiahan Yu, 2017 .

Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs

Jing Xu, Xiaobin He, Qiang Xu, 2014, IEEE Electron Device Letters.

Investigation of TiAlC by Atomic Layer Deposition as N Type Work Function Metal for FinFET

Chao Zhao, Hushan Cui, Huaxiang Yin, 2015 .

Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology

Qiang Xu, Tianchun Ye, Chao Zhao, 2014 .

Novel metallization processes for sub-100 nm magnetic tunnel junction devices

Junjie Li, Weisheng Zhao, Youguang Zhang, 2019, Microelectronic Engineering.

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

Tianchun Ye, Junjie Li, Chao Zhao, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate

Chao Zhao, Huaxiang Yin, Jinjuan Xiang, 2016 .