M. Luenenbuerger

Integrated polynomic growth parameter model for GaN/GaInN MQW structures for 6x2" and 11x2" mass production MOCVD reactors

Michael Heuken, O. Schoen, H. Protzmann, 2002, SPIE OPTO.

Highly efficient InGaN/GaN MQW for blue- and green-light-emitting structures grown in production MOVPE reactors

H. Protzmann, M. Luenenbuerger, Michael D. Bremser, 2000, Photonics West - Optoelectronic Materials and Devices.

InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80-450 K

Michael Heuken, H. Protzmann, M. Luenenbuerger, 2003, Other Conferences.

Optically pumped transverse lasers based on ZnMgSSe/ZnSe and InGaN/GaN heterostructures

Michael Heuken, Holger Kalisch, O. Schoen, 2002, International Conference on Coherent and Nonlinear Optics.

Silicon as a substrate in multiwafer MOVPE GaN technology

Michael Heuken, H. Protzmann, M. Luenenbuerger, 2001, SPIE OPTO.

Spectral-angular and threshold characteristics of ultraviolet-blue In(Al)GaN/GaN/Al2O3 heterostructure lasers

Michael Heuken, A. Alam, H. Protzmann, 2002, International Conference on Coherent and Nonlinear Optics.

Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Michael Heuken, M. Luenenbuerger, Marianne Germain, 2009 .