Hans Reisinger

发表

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI

Tibor Grasser, Katja Puschkarsky, Hans Reisinger, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

From Device Aging Physics to Automated Circuit Reliability Sign Off

Georg Georgakos, Hans Reisinger, Christian Schlünder, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

A single-trap study of PBTI in SiON nMOS transistors: Similarities and differences to the NBTI/pMOS case

Tibor Grasser, Hans Reisinger, Michael Waltl, 2014, 2014 IEEE International Reliability Physics Symposium.

Characterization and modeling of charge trapping: From single defects to devices

Tibor Grasser, Jacopo Franco, Ben Kaczer, 2014, 2014 IEEE International Conference on IC Design & Technology.

Degradation and recovery of variability due to BTI

Andreas Martin, Jörg Berthold, Hans Reisinger, 2016, Microelectron. Reliab..

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Karl Rupp, Tibor Grasser, Ben Kaczer, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Drift compensating effect during hot-carrier degradation of 130nm technology dual gate oxide P-channel transistors

Hans Reisinger, Wolfgang Gustin, Gunnar Andreas Rott, 2013, 2013 IEEE International Integrated Reliability Workshop Final Report.

Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors

Tibor Grasser, Hans Reisinger, Wolfgang Gustin, 2014, Microelectron. Reliab..

Impact factors for BTI lifetime predictions

Andreas Martin, Hans Reisinger, Wolfgang Gustin, 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

New insights on the PBTI phenomena in SiON pMOSFETs

Tibor Grasser, Hans Reisinger, Christian Schlünder, 2012, Microelectron. Reliab..

Circuit relevant HCS lifetime assessments at single transistors with emulated variable loads

Georg Georgakos, Katja Puschkarsky, Hans Reisinger, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

MOS transistor characteristics and its dependence of plasma charging degradation on the test structure layout for a 0.13µm CMOS technology

Andreas Martin, Hans Reisinger, Rolf-Peter Vollertsen, 2010, 2010 IEEE International Integrated Reliability Workshop Final Report.

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs

Tibor Grasser, Katja Puschkarsky, Hans Reisinger, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation

Hans Reisinger, Katja Waschneck, Thomas Aichinger, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications

Michael Specht, Franz Hofmann, Wolfgang Rösner, 2005 .

Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation

Tibor Grasser, Katja Puschkarsky, Hans Reisinger, 2017, 2017 IEEE International Integrated Reliability Workshop (IIRW).

On the PBTI degradation of pMOSFETs and its impact on IC lifetime

Hans Reisinger, Wolfgang Gustin, Stefano Aresu, 2011, 2011 IEEE International Integrated Reliability Workshop Final Report.

Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

Hans Reisinger, Emmerich Bertagnolli, H. Reisinger, 2001 .

Investigation of threshold voltage stability of SiC MOSFETs

Katja Puschkarsky, Hans Reisinger, Thomas Basler, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

SrTiOx for sub-20nm DRAM technology nodes-Characterization and modeling

B. Kaczer, Malgorzata Jurczak, Zhigang Ji, 2015 .

Influence of MOSFET geometry on the statistical distribution of NBTI induced parameter degradation

Hans Reisinger, Wolfgang Gustin, Christian Schlunder, 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

A model for multistep trap-assisted tunneling in thin high-k dielectrics

Ignaz Eisele, Hans Reisinger, M. Gutsche, 2005 .

Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

Tibor Grasser, Katja Puschkarsky, Hans Reisinger, 2018, IEEE Transactions on Device and Materials Reliability.

On the temperature and voltage dependence of short-term negative bias temperature stress

Tibor Grasser, P.-J. Wagner, Hans Reisinger, 2009, Microelectron. Reliab..

On the influence of BTI and HCI on parameter variability

Jörg Berthold, Hans Reisinger, Christian Schlünder, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

A new physics-based NBTI model for DC-and AC-stress enabling accurate circuit aging simulations considering recovery

Tibor Grasser, Hans Reisinger, Christian Schlünder, 2010 .

Electrical breakdown induced by silicon nitride roughness in thin oxide–nitride–oxide films

Hans Reisinger, A. Spitzer, H. Reisinger, 1996 .