Gerard Ghibaudo

发表

Ultra-low power 1T-DRAM in FDSOI technology

Yuan Taur, Sorin Cristoloveanu, J. Lacord, 2017 .

Static and noise characterization of deep submicron CMOS devices

J. Zimmermann, Gerard Ghibaudo, G. Ghibaudo, 1995, 1995 International Semiconductor Conference. CAS '95 Proceedings.

Scaling down and low‐frequency noise in MOSFET’s. Are the RTS’s the ultimate components of the 1/f noise?

Gerard Ghibaudo, J. Brini, G. Kamarinos, 2008 .

A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements

Gerard Ghibaudo, J. A. Chroboczek, P. Llinares, 1998, ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157).

Low frequency noise characterization and modelling in ultrathin oxide MOSFETs

K. Romanjek, Gerard Ghibaudo, T. Boutchacha, 2006 .

Low‐Frequency Noise in a 0.18 μm Mixed‐Mode CMOS Technology at Low Temperature

Gerard Ghibaudo, P. Martin, M. Cavelier, 2009 .

Experimental determination of short-channel MOSFET parameters

Sorin Cristoloveanu, Gerard Ghibaudo, Chu Hao, 1985 .

On the Optimization of Ebeam Lithography Using Hydrogen Silsesquioxane (HSQ) for Innovative Self-Aligned CMOS Process

Stephane Monfray, Frederic Boeuf, Thomas Skotnicki, 2013 .

Analytical modeling of the transconductance of short channel MOSFETs in the saturation region

Gerard Ghibaudo, 1989 .

Analytical modelling of ultra-thin film depletion-mode soi MOSFETs

Jean Brini, Gerard Ghibaudo, Francis Balestra, 1991 .

Effect of substrate voltage and oxide thickness on NMOSFET matching characteristics for a 0.18 /spl mu/m CMOS technology

R. Difrenza, Gerard Ghibaudo, H. Brut, 2001, ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153).

MOSFET modeling for design of ultra-high performance infrared CMOS imagers working at cryogenic temperatures: Case of an analog/digital 0.18 μm CMOS process

A. S. Royet, P. Martin, Gerard Ghibaudo, 2011 .

Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterisation

Gerard Ghibaudo, H. Haddara, 1988 .

Evaluation of variability performance of junctionless and conventional Trigate transistors

Gerard Ghibaudo, G. Ghibaudo, 2012 .

Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements

Gerard Ghibaudo, J. A. Chroboczek, Pierre Llinares, 1999 .

New approach for the gate current source–drain partition modeling in advanced MOSFETs

K. Romanjek, Gerard Ghibaudo, Charles Leroux, 2003 .

Low-frequency noise and fluctuations in advanced CMOS devices

Gerard Ghibaudo, G. Ghibaudo, 2003, SPIE International Symposium on Fluctuations and Noise.

Model for drain current RTS amplitude in small-area MOS transistors

Jean Brini, Gerard Ghibaudo, O. Roux dit Buisson, 1992 .