Liang Wang

Radiation Hardened 12T SRAM With Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

Xiaoyang Zeng, Jun Han, Tongde Li, 2021, IEEE Transactions on Circuits and Systems I: Regular Papers.

3D Simulation of transient current and charge collection induced by heavy ion in SOI transistors

Suge Yue, Liang Wang, Xiaochen Zhang, 2010, 2010 IEEE Nanotechnology Materials and Devices Conference.

Single event effects on hard-by-design latches

Suge Yue, Liang Wang, Yuanfu Zhao, 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.

SEU and SET of 65 Bulk CMOS Flip-flops and Their Implications for RHBD

Dan Wang, Suge Yue, Hongchao Zheng, 2015, IEEE Transactions on Nuclear Science.

The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

Qi Guo, Qiwen Zheng, Xuefeng Yu, 2018, IEEE Transactions on Nuclear Science.