Z. Hu

Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements

C. De Santi, G. Meneghesso, M. Meneghini, 2021, OPTO.

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Huili Grace Xing, Ronghua Wang, O. Laboutin, 2013, 2013 IEEE International Electron Devices Meeting.

GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Huili Grace Xing, Kazuki Nomoto, T. Mishima, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).