Nobuki Tezuka

发表

Current technology and future prospect of MRAM

Koichiro Inomata, Nobuki Tezuka, 2002 .

Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers

Koichiro Inomata, Nobuki Tezuka, Satoshi Sugimoto, 2002 .

Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy

Nobuki Tezuka, Satoshi Sugimoto, N. Tezuka, 2009 .

Highly spin-polarized materials and devices for spintronics∗

Koichiro Inomata, Nobuki Tezuka, Satoshi Sugimoto, 2008, Science and technology of advanced materials.

Room temperature observation of high spin polarization in post annealed Co2FeSi/MgO/n+-Si on insulator devices

Nobuki Tezuka, Tomoaki Inokuchi, Hideyuki Sugiyama, 2017 .

High coercive Zn-bonded Sm-Fe-N magnets prepared using fine Zn particles with low oxygen content

Nobuki Tezuka, Satoshi Sugimoto, Masashi Matsuura, 2018 .

Size-independent spin switching field using synthetic antiferromagnets

Koichiro Inomata, Nobuki Tezuka, N. Tezuka, 2003 .

Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer

Koichiro Inomata, Nobuki Tezuka, Satoshi Sugimoto, 2004 .

Large Tunneling Magnetoresistance at Room Temperature Using a Heusler Alloy with the B2 Structure

Ryota Goto, Koichiro Inomata, Nobuki Tezuka, 2003 .

Erratum: Corrigendum: Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve

Koichiro Inomata, Nobuki Tezuka, Atsufumi Hirohata, 2005, Nature materials.

Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve

Koichiro Inomata, Nobuki Tezuka, Atsufumi Hirohata, 2004 .

Heusler alloy/semiconductor hybrid structures

Koichiro Inomata, Nobuki Tezuka, Yongbing Xu, 2006 .

Spin polarized tunneling in ferromagnet/insulator/ferromagnet junctions

Nobuki Tezuka, Terunobu Miyazaki, T. Miyazaki, 1995 .