C. Moreau

A complete methodology for assessing GaN behaviour for military applications

C. Moreau, M. Le Pipec, S. Tence, 2010, Microelectron. Reliab..

Comparative analysis of targeted metabolomics: Dominance-based rough set approach versus orthogonal partial least square-discriminant analysis

Jean-Charles Billaut, Roman Slowinski, C. Moreau, 2015, J. Biomed. Informatics.

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2013, Microelectron. Reliab..

Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging

C. Moreau, E. Latu-Romain, Jean-Guy Tartarin, 2017, Microelectron. Reliab..

Reliability of high voltage/high power L/S-band Hbt technology

D. Floriot, Hervé Blanck, Benoit Lambert, 2010, Microelectron. Reliab..

Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies

C. Moreau, Jean-Guy Tartarin, Benoit Lambert, 2015, Microelectron. Reliab..

A complete RF power technology assessment for military applications

C. Moreau, D. Ruelloux, P. Le Helleye, 2006, Microelectron. Reliab..

New approach for an accurate Schottky Barrier Height's extraction by I-V-T measurements

C. Moreau, J. G. Tartarin, B. Lambert, 2015, 2015 IEEE MTT-S International Microwave Symposium.