J.A. del Alamo

发表

Fundamental Power and Frequency Limits of Deeply-Scaled CMOS for RF Power Applications

J. Scholvin, D.R. Greenberg, J.A. del Alamo, 2006, 2006 International Electron Devices Meeting.

A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT

A. Inoue, T. Oku, J.A. del Alamo, 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

RF power performance of an LDMOSFET on high-resistivity SOI

J.A. del Alamo, J.G. Fiorenza, 2005, IEEE Electron Device Letters.

A Self-Aligned InGaAs HEMT Architecture for Logic Applications

Dae-Hyun Kim, J.A. del Alamo, N. Waldron, 2009, IEEE Transactions on Electron Devices.

RF power potential of 45 nm CMOS technology

J.A. del Alamo, C. Putnam, U. Gogineni, 2010, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

30 nm In0.7Ga0.3As Inverted-Type HEMTs with reduced gate leakage current for logic applications

Dae-Hyun Kim, Tae-Woo Kim, J.A. del Alamo, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Logic Suitability of 50-nm $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Beyond-CMOS Applications

Dae-Hyun Kim, Kwang-Seok Seo, J.A. del Alamo, 2007, IEEE Transactions on Electron Devices.

A process control methodology applied to sub-micron gate lithography in manufacturing GaAs MMICs

J.A. del Alamo, P.W. Moran, S. Elliot, 1990, Ninth IEEE/CHMT International Symposium on Electronic Manufacturing Technology,Competitive Manufacturing for the Next Decade.

An equivalent circuit model for a Faraday cage substrate crosstalk isolation structure

J.A. del Alamo, J.H. Wu, 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

Performance and limitations of 65 nm CMOS for integrated RF power applications

J. Scholvin, D.R. Greenberg, J.A. del Alamo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

RF power potential of 90 nm CMOS: device options, performance, and reliability

J. Scholvin, D.R. Greenberg, J.A. del Alamo, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

The physics and modeling of heavily doped emitters

J.A. del Alamo, R. M. Swanson, J. D. del Alamo, 1984, IEEE Transactions on Electron Devices.

Off-state breakdown in power pHEMTs: the impact of the source

J.A. del Alamo, P. Saunier, J. D. del Alamo, 1996, 1996 54th Annual Device Research Conference Digest.

Bias dependence of f/sub T/ and f/sub max/ in an In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub 0.53/Ga/sub 0.47/As MISFET

J.A. del Alamo, T. Mizutani, 1988, IEEE Electron Device Letters.

A through-wafer interconnect in silicon for RFICs

J. Scholvin, J.A. del Alamo, J.H. Wu, 2004, IEEE Transactions on Electron Devices.

A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

J.A. del Alamo, J. D. del Alamo, J. Joh, 2008, IEEE Electron Device Letters.

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

J.A. del Alamo, Jungwoo Joh, Tso-Min Chou, 2009, IEEE Transactions on Electron Devices.

Lateral and Vertical Scaling of $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Post-Si-CMOS Logic Applications

J.A. del Alamo, Dae-Hyun Kim, 2008, IEEE Transactions on Electron Devices.

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Seong-Yong Park, J.A. del Alamo, P. Saunier, 2008, IEEE Electron Device Letters.

Hydrogen degradation in InP HEMTs

J.A. del Alamo, P.C. Chao, J. D. del Alamo, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

A Faraday cage isolation structure for substrate crosstalk suppression

J. Scholvin, J.A. del Alamo, J.H. Wu, 2001, IEEE Microwave and Wireless Components Letters.

Forward-bias tunneling: A limitation to bipolar device scaling

J.A. del Alamo, R. M. Swanson, J. D. del Alamo, 1986, IEEE Electron Device Letters.

Impact ionization in strained-Si/SiGe heterostructures

J.A. del Alamo, N. Waldron, J. D. del Alamo, 2003, IEEE International Electron Devices Meeting 2003.

Beyond CMOS: Logic Suitability of InGaAs HEMTs

J.A. del Alamo, Dae-Hyun Kim, 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

J.A. del Alamo, R. M. Swanson, J. D. del Alamo, 1987, IEEE Transactions on Electron Devices.

Degradation mechanism of PHEMT under large signal operation

J.A. del Alamo, T. Hisaka, N. Yoshida, 2003, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

J.A. del Alamo, Jungwoo Joh, J. D. del Alamo, 2008, 2008 IEEE International Electron Devices Meeting.

90 nm Self-aligned Enhancement-mode InGaAs HEMT for Logic Applications

N. Waldron, J.A. del Alamo, Dae-Hyun Kim, 2007, 2007 IEEE International Electron Devices Meeting.

Measurement of hole mobility in heavily doped n-type silicon

J.A. del Alamo, R. M. Swanson, J. D. del Alamo, 1986, IEEE Electron Device Letters.

Drain Corrosion in RF Power GaAs PHEMTs

J.A. del Alamo, T. Ishida, T. Hisaka, 2007, 2007 IEEE International Electron Devices Meeting.

Physics of breakdown in InAlAs/n/sup +/-InGaAs heterostructure field-effect transistors

J.A. del Alamo, S.R. Bahl, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

A new physical model for the kink effect on InAlAs/InGaAs HEMTs

J.A. del Alamo, J. D. del Alamo, M.H. Somerville, 1995, Proceedings of International Electron Devices Meeting.

The Impact of Side-Recess Spacing on the Logic Performance of 50 nm InGaAs HEMTs

Kwang-Seok Seo, J.A. del Alamo, Jae-Hak Lee, 2006, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.

Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications

Kwang-Seok Seo, J.A. del Alamo, Jae-Hak Lee, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs

J.A. del Alamo, J. D. del Alamo, M.H. Somerville, 1996, IEEE Electron Device Letters.

A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs

J.A. del Alamo, P.C. Chao, J. D. del Alamo, 1998, IEEE Electron Device Letters.

RF power LDMOSFET on SOI

J.A. del Alamo, D. Antoniadis, J. D. del Alamo, 2001, IEEE Electron Device Letters.

RF power performance of LDMOSFETs on SOI: an experimental comparison with bulk Si LDMOSFETs

J.A. del Alamo, J.G. Fiorenza, 2001, 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173).

Technologies for RF power LDMOSFETs beyond 2 GHz: metal/poly-Si damascene gates and low-loss substrates

J. Scholvin, J.A. del Alamo, J. Scholvin, 2002, Digest. International Electron Devices Meeting,.

Breakdown in millimeter-wave power InP HEMTs: a comparison with PHEMTs

J.A. del Alamo, J. D. del Alamo, M.H. Somerville, 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

Thermal, electrical and environmental reliability of InP HEMTs and GaAs PHEMTs

J.A. del Alamo, J. D. del Alamo, A.A. Villanueva, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Determining dominant breakdown mechanisms in InP HEMTs

J.A. del Alamo, M.H. Somerville, C.S. Putnam, 2001, IEEE Electron Device Letters.

A model for tunneling-limited breakdown in high-power HEMTs

J.A. del Alamo, J. D. del Alamo, M.H. Somerville, 1996, International Electron Devices Meeting. Technical Digest.

Through-Substrate Interconnects for 3-D ICs, RF Systems, and MEMS

J.A. del Alamo, J.H. Wu, 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

A monolithic tunable high-Q InAlAs/n/sup +/-InP-HFET resonator

J.A. del Alamo, D.R. Greenberg, P.R. Nuytkens, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

Positive temperature coefficient of impact ionization in strained-Si

J.A. del Alamo, N. Waldron, J. D. del Alamo, 2005, IEEE Transactions on Electron Devices.

On-state breakdown in power HEMTs: measurements and modeling

J.A. del Alamo, P.C. Chao, J. D. del Alamo, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Scaling Behavior of In0.7Ga0.3As HEMTs for Logic

J.A. del Alamo, Dae-Hyun Kim, Daehyun Kim, 2006, 2006 International Electron Devices Meeting.

Logic Performance of 40 nm InAs HEMTs

J.A. del Alamo, Dae-Hyun Kim, Daehyun Kim, 2007, 2007 IEEE International Electron Devices Meeting.

Electrical degradation of InAlAs/InGaAs metamorphic high-electron mobility transistors

J.A. del Alamo, S.D. Mertens, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Impact ionization in InAlAs/InGaAs HFET's

J.A. del Alamo, S. Bahl, S.R. Bahl, 1994, IEEE Electron Device Letters.