Mujahid Muhammad

发表

Optical and electrical testing of latchup in I/O interface circuits

Franco Stellari, Alan J. Weger, Peilin Song, 2003, International Test Conference, 2003. Proceedings. ITC 2003..

Method and structure to reduce leakage for ESD device

Mujahid Muhammad, Ahmed Y. Ginawi, Nazmul Habib, 2017, 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).

An ESD design automation framework and tool flow for nano-scale CMOS technologies

Souvick Mitra, Junjun Li, Robert Gauthier, 2010, Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010.

Design automation to suppress cable discharge event (CDE) induced latchup in 90nm CMOS ASICs

Paul Dunn, Robert Gauthier, Kiran V. Chatty, 2005, 2005 Electrical Overstress/Electrostatic Discharge Symposium.

INVESTIGATION OFEXTERNALLATCHUPROBUSTNESS OFDUALAND TRIPLE WELLDESIGNS IN65NMBULKCMOS TECHNOLOGY

Christian Russ, Kiran V. Chatty, Mujahid Muhammad, 2006 .

Method and structure to reduce leakage for ESD device: ET/ID: Enabling technologies and innovative devices

Mujahid Muhammad, Jeanne P. Bickford, Ahmed Y. Ginawi, 2017, ASMC 2017.

Identification and verification of BEOL metal fails due to ESD stress using current density analysis tool

Souvick Mitra, Robert Gauthier, Ralph Halbach, 2013, 2013 35th Electrical Overstress/Electrostatic Discharge Symposium.

Failure Analysis ofI/OwithESDProtection Devices inAdvanced CMOS Technologies

Junjun Li, Kiran V. Chatty, Mujahid Muhammad, 2007 .

Interference Mitigation in D2D Communication Underlaying LTE-A Network

Muhammad Ali Imran, Rahim Tafazolli, Masood Ur Rehman, 2016, IEEE Access.

Survey on existing authentication issues for cellular-assisted V2X communication

Mujahid Muhammad, Ghazanfar Ali Safdar, G. A. Safdar, 2018, Veh. Commun..

Deep Trench Capacitor in Three Dimensional Through Silicon via Keepout Area for Electrostatic Discharge Protection

Jeanne Paulette Bickford, Mujahid Muhammad, Fred J. Towler, 2016, IEEE Transactions on Semiconductor Manufacturing.

Predictive full circuit ESD simulation and analysis using extended ESD compact models: Methodology and tool implementation

Souvick Mitra, Junjun Li, Robert Gauthier, 2010, Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010.

Latchup Analysis Using Emission Microscopy

Franco Stellari, Alan J. Weger, Peilin Song, 2003, Microelectron. Reliab..

Deep trench capacitor in three dimensional through silicon via keepout area for electrostatic discharge protection

Mujahid Muhammad, Fred J. Towler, Ahmed Y. Ginawi, 2015, 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

A current density analysis tool to identify BEOL fails under ESD stress

Souvick Mitra, Robert Gauthier, Ralph Halbach, 2011, EOS/ESD Symposium Proceedings.

Analysis of Security Overhead in Broadcast V2V Communications

Andreas Kunz, Paul Kearney, Adel Aneiba, 2019, SAFECOMP Workshops.

Electrostatic discharge induced oxide breakdown characterization in a 0.1 /spl mu/m CMOS technology

Akram A. Salman, Dimitris E. Ioannou, Mujahid Muhammad, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

NMOSFET ESD self-protection strategy and underlying failure mechanism in advanced 0.13-/spl mu/m CMOS technology

Akram A. Salman, R. Gauthier, Dimitris E. Ioannou, 2002 .

Characterization and investigation of the interaction between hot electron and electrostatic discharge stresses using NMOS devices in 0.13 /spl mu/m CMOS technology

Akram A. Salman, Dimitris E. Ioannou, Kai Esmark, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

ESD-induced oxide breakdown on self-protecting GG-nMOSFET in 0.1-/spl mu/m CMOS technology

Akram A. Salman, Dimitris E. Ioannou, Mujahid Muhammad, 2003 .