Matteo Meneghini

发表

Near-UV LED-based systems for low-cost and compact oxygen-sensing systems in gas and liquids

Angelo Cenedese, Gaudenzio Meneghesso, Enrico Zanoni, 2019, OPTO.

Trapping induced parasitic effects in GaN-HEMT for power switching applications

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2015, 2015 IEEE 1st International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow (RTSI).

Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2018, Microelectron. Reliab..

Failure causes and mechanisms of retrofit LED lamps

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2015, Microelectron. Reliab..

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences

Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

Gaudenzio Meneghesso, Matteo Meneghini, Alessandro Caria, 2020, OPTO.

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Hervé Blanck, Enrico Zanoni, 2018, Microelectron. Reliab..

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

Gaudenzio Meneghesso, Enrico Zanoni, J. Wagner, 2014, Microelectron. Reliab..

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Stability and performance evaluation of high-brightness light-emitting diodes under DC and pulsed bias conditions

Gaudenzio Meneghesso, Simone Buso, Enrico Zanoni, 2006, SPIE Optics + Photonics.

Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project

Gaudenzio Meneghesso, Giuseppe Belgioioso, Enrico Zanoni, 2018, Sensors.

Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

Gaudenzio Meneghesso, Enrico Zanoni, Sven Einfeldt, 2017, OPTO.

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2017, Microelectron. Reliab..

ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements

Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi, 2014, Microelectron. Reliab..

High brightness GaN LEDs degradation during dc and pulsed stress

Ruggero Pintus, Gaudenzio Meneghesso, Enrico Zanoni, 2006, Microelectron. Reliab..

High temperature electro-optical degradation of InGaN/GaN HBLEDs

Gaudenzio Meneghesso, Massimo Vanzi, Enrico Zanoni, 2007, Microelectron. Reliab..

Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, Microelectron. Reliab..

Stress-induced instabilities of shunt paths in high efficiency MWT solar cells

Gaudenzio Meneghesso, Enrico Zanoni, Giovanna Mura, 2015, 2015 IEEE International Reliability Physics Symposium.

(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective

Balaji Padmanabhan, Frederick Declercq, Gaudenzio Meneghesso, 2016 .

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

AlGaN/GaNH EMTのオーバードライブ応力状態下での連続時間領域RF波形モニタリング【Powered by NICT】

Enrico Zanoni, Sylvain Laurent, Matteo Meneghini, 2016 .

First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications

Gaudenzio Meneghesso, Nathalie Rolland, Enrico Zanoni, 2013, IEEE Transactions on Device and Materials Reliability.

Analysis and design of extreme intensity irradiation devices for research applications

Gaudenzio Meneghesso, Michele Forzan, Nicola Trivellin, 2020, OPTO.

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2015, Microelectron. Reliab..

Origin of the low-forward leakage current in InGaN-based LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2019, OPTO.

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Gaudenzio Meneghesso, Matteo Meneghini, Oliver Hilt, 2017 .

Understanding the degradation processes of GaN based LEDs submitted to extremely high current density

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, Microelectron. Reliab..

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2018, OPTO.

Reliability of GaN-Based Power Devices

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018 .

Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes

Giovanni Ghione, Gaudenzio Meneghesso, Luigi Rovati, 2015, SPIE Optical Engineering + Applications.

Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2004, SPIE Optics + Photonics.

Degradation mechanisms of high-power white LEDs activated by current and temperature

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2011, Microelectron. Reliab..

Degradation of InGaN-based LEDs related to charge diffusion and build-up

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, Microelectron. Reliab..

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2013, Photonics West - Optoelectronic Materials and Devices.

ESD characterization of multi-chip RGB LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Diego Barbisan, 2013, Microelectron. Reliab..

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011, Microelectron. Reliab..

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, 2013, Microelectron. Reliab..

Laboratory PV Generator for MPPT Response Testing

Simone Buso, Giorgio Spiazzi, Matteo Meneghini, 2013 .

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors

Gaudenzio Meneghesso, Peter Moens, Matteo Meneghini, 2015, 2015 IEEE International Reliability Physics Symposium.

Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Characterization and endurance study of aluminate/silicate/garnet/nitride phosphors for high-performance SSL

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2013, Photonics West - Optoelectronic Materials and Devices.

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Gaudenzio Meneghesso, A. Nardo, Enrico Zanoni, 2018, 2019 IEEE International Reliability Physics Symposium (IRPS).

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Gaudenzio Meneghesso, Stefaan Decoutere, Enrico Zanoni, 2017, Microelectron. Reliab..

Challenges for highly reliable GaN-based LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2019, OPTO.

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling

Matteo Meneghini, Frank Altmann, Enrico Zanoni, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Phosphors for LED-based light sources: Thermal properties and reliability issues

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2012, Microelectron. Reliab..

Current induced degradation study on state of the art DUV LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2018, Microelectron. Reliab..

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2012, Microelectron. Reliab..

Dependence of degradation on InGaN quantum well position: a study based on color coded structures

Gaudenzio Meneghesso, Matteo Meneghini, Alessandro Caria, 2020, OPTO.

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis

Gaudenzio Meneghesso, Eric E. Fabris, Enrico Zanoni, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

Gaudenzio Meneghesso, Enrico Zanoni, Stefania Marconi, 2013, Microelectron. Reliab..

ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2014, Microelectron. Reliab..

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, 2014, Microelectron. Reliab..

White-light sources based on GaN laser diodes: analysis and application study

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2018, OPTO.

Long-term degradation mechanisms of mid-power LEDs for lighting applications

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2015, Microelectron. Reliab..

Thermal and electrical investigation of the reverse bias degradation of silicon solar cells

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2013, Microelectron. Reliab..

Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012, Microelectron. Reliab..

Adaptive multi-wavelength LED star simulator for space life studies

Enrico Giro, Gaudenzio Meneghesso, Luca Poletto, 2016, SPIE OPTO.

Extensive analysis of the degradation of phosphor-converted LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2009, Optical Engineering + Applications.

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications

Gaudenzio Meneghesso, Hervé Blanck, Benoit Lambert, 2014, Microelectron. Reliab..

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015, Microelectron. Reliab..

Positive and negative threshold voltage instabilities in GaN-based transistors

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Degradation physics of GaN-based lateral and vertical devices

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2019, OPTO.

Reliability analysis of InGaN Blu-Ray laser diode

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2009, Microelectron. Reliab..

Degradation of GaN-on-GaN vertical diodes submitted to high current stress

Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, 2018, Microelectron. Reliab..

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

Peter Moens, Matteo Meneghini, Benoit Bakeroot, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Degradation mechanisms of InAs quantum dot 1.3μm laser diodes epitaxially grown on silicon

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2019, OPTO.

Breakdown investigation in GaN-based MIS-HEMT devices

Fabio Alessio Marino, Gaudenzio Meneghesso, Denis Marcon, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

温度と電流駆動拡散過程によるInGaNレーザダイオードの劣化【Powered by NICT】

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016 .

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2017, OPTO.

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

Dionyz Pogany, Frank Brunner, Gaudenzio Meneghesso, 2016, Microelectron. Reliab..

Aging behavior, reliability, and failure physics of GaN-based optoelectronic components

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2016, SPIE OPTO.

Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework

Giovanni Ghione, Enrico Bellotti, Enrico Zanoni, 2016, SPIE OPTO.

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

An Analysis of the Compositional Techniques in John Chowning's Stria

Matteo Meneghini, 2007, Computer Music Journal.

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, X. Li, 2018, Microelectron. Reliab..

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Matteo Meneghini, Carlo De Santi, Enrico Zanoni, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Traps localization and analysis in GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2014, Microelectron. Reliab..

Electron Trapping in GaN-on-Si Power HEMTs

Gaudenzio Meneghesso, Michael J. Uren, Peter Moens, 2015, ICNS 2015.

Failures of LEDs in Real-World Applications: A Review

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2018, IEEE Transactions on Device and Materials Reliability.

Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, Microelectron. Reliab..

Degradation of vertical GaN FETs under gate and drain stress

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

J. Yang, Gaudenzio Meneghesso, Enrico Zanoni, 2010, Microelectron. Reliab..

Thermal stability analysis of high brightness LED during high temperature and electrical aging

Massimo Vanzi, Gaudenzio Meneghesso, Simone Buso, 2007, SPIE Optical Engineering + Applications.

Reliability oriented design of LED-based light sources

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2013 .

Long-term degradation of InGaN-based laser diodes: Role of defects

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, Microelectron. Reliab..

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013, Microelectron. Reliab..

Laboratory PV generator for MPPT dynamic response testing

Simone Buso, Giorgio Spiazzi, Matteo Meneghini, 2013, 2013 Brazilian Power Electronics Conference.

Chip and package-related degradation of high power white LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2012, Microelectron. Reliab..

Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs

D. Barataud, Enrico Zanoni, Sylvain Laurent, 2016, Microelectron. Reliab..

"Hot-plugging" of LED modules: Electrical characterization and device degradation

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2013, Microelectron. Reliab..

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2015, Microelectron. Reliab..

Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Thermal, optical, and electrical engineering of an innovative tunable white LED light engine

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2014, Photonics West - Optoelectronic Materials and Devices.

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012, Microelectronics and reliability.

Reliability evaluation for Blu-Ray laser diodes

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2010, Microelectron. Reliab..

Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs

Paolo Pavan, Giovanni Verzellesi, Matteo Meneghini, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2012, Microelectron. Reliab..

Recent results on the physical origin of the degradation of GaN-based LEDs and lasers

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011, OPTO.

Proton induced trapping effect on space compatible GaN HEMTs

Gaudenzio Meneghesso, Hervé Blanck, Benoit Lambert, 2014, Microelectron. Reliab..

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, Microelectron. Reliab..

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Gaudenzio Meneghesso, A. Nardo, Enrico Zanoni, 2019, IRPS.

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions

Peter Moens, Matteo Meneghini, Carlo De Santi, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications

Gaudenzio Meneghesso, Niels Posthuma, Enrico Zanoni, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2021, Crystals.

CdTe solar cells: technology, operation and reliability

Gaudenzio Meneghesso, Enrico Zanoni, Giovanna Mura, 2021 .

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT

J. Cluzel, Gaudenzio Meneghesso, Romain Gwoziecki, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives

Gaudenzio Meneghesso, Enrico Zanoni, Fabrizio Dughiero, 2021, Electronics.

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Dionyz Pogany, Gaudenzio Meneghesso, Enrico Zanoni, 2013 .

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014, IEEE transactions on power electronics.

Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Sven Einfeldt, 2017 .

A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2010, 2010 IEEE International Reliability Physics Symposium.

Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2011, 2011 International Electron Devices Meeting.

Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2009 .

Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2014 .

Electron and hole-related luminescence processes in gate injection transistors

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2010 .

Reliability issues of Gallium Nitride High Electron Mobility Transistors

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2010, International Journal of Microwave and Wireless Technologies.

Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015, IEEE Transactions on Electron Devices.

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

Gaudenzio Meneghesso, Enrico Zanoni, Marleen Van Hove, 2016, IEEE Electron Device Letters.

Laser-Based Lighting: Experimental Analysis and Perspectives

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2017, Materials.

Role of defects in the thermal droop of InGaN-based light emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016 .

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015 .

Reliability and parasitic issues in GaN-based power HEMTs: a review

Gaudenzio Meneghesso, Enrico Zanoni, Stefaan Decoutere, 2016 .

Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

Power GaN Devices

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017 .

Physical mechanisms limiting the performance and the reliability of GaN-based LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi, 2018 .

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Gaudenzio Meneghesso, Niels Posthuma, Enrico Zanoni, 2018, IEEE Transactions on Electron Devices.

Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2019, IEEE Journal of Quantum Electronics.

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011 .

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014 .

Thermal degradation of InGaN/GaN LEDs ohmic contacts

Gaudenzio Meneghesso, E. Zanoni, Matteo Meneghini, 2007 .

A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, 2008 .

Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, 2006 .

Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012 .

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Bellotti, 2014 .

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015 .

STRIA, BY JOHN CHOWNING: ANALYSIS OF THE COMPOSITIONAL PROCESS

Matteo Meneghini, 2003 .

Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, 2016 IEEE International Integrated Reliability Workshop (IIRW).

Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

Umesh K. Mishra, Matteo Meneghini, Davide Bisi, 2017 .

Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2010 .

Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Zanoni, 2015 .

Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015 .

A review on the reliability of GaN-based laser diodes

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2010, IRPS 2010.

(Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2011 .

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Huili Grace Xing, Gaudenzio Meneghesso, Enrico Zanoni, 2020, physica status solidi (a).

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

Parasitic Effects in GaN HEMTs and Related Characterization Methods

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2009 .

Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2017, IEEE Journal of Quantum Electronics.

Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes

Enrico Zanoni, Uwe Strauss, Fausto Rossi, 2006 .

GaN-Based Laser Wireless Power Transfer System

Gaudenzio Meneghesso, Enrico Zanoni, Malek Zegaoui, 2018, Materials.

Gaudenzio Meneghesso, Enrico Zanoni, Sven Einfeldt, 2017, IEEE Transactions on Electron Devices.

Evidence of optically induced degradation in gallium nitride optoelectronic devices

Gaudenzio Meneghesso, Enrico Zanoni, Malek Zegaoui, 2018, Applied Physics Express.

GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013 .

GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012 .

Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Zanoni, 2015 .

Analysis of the degradation of AlGaN-based deep-ultraviolet LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2009 .

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2010 .

Soft and Hard Failures of InGaN-Based LEDs Submitted to Electrostatic Discharge Testing

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2010, IEEE Electron Device Letters.

Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, 2014 IEEE International Reliability Physics Symposium.

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013 .

Analysis of the role of current in the degradation of InGaN-based laser diodes

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2009 .

On-Wafer Single-Pulse Thermal Load–Pull RF Characterization of Trapping Phenomena in AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Sylvain Laurent, 2016, IEEE Transactions on Microwave Theory and Techniques.

Modeling challenges for high-efficiency visible light-emitting diodes

Giovanni Ghione, Enrico Bellotti, Giovanni Verzellesi, 2015, 2015 IEEE 1st International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow (RTSI).

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2016 .

Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2014 .

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, IEEE Transactions on Electron Devices.

Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Zanoni, 2015 .

Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Bellotti, 2013 .

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

Gaudenzio Meneghesso, Enrico Zanoni, Hidetoshi Ishida, 2014 .

Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, IEEE Transactions on Device and Materials Reliability.

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Gaudenzio Meneghesso, Enrico Zanoni, M. Bagatin, 2014 .

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.

Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2013 .

Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2016, IEEE Transactions on Nanotechnology.

Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, IEEE Transactions on Electron Devices.

Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013, IEEE Transactions on Electron Devices.

Gate Stability of GaN-Based HEMTs with P-Type Gate

Gaudenzio Meneghesso, Niels Posthuma, Denis Marcon, 2016 .

GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, IEEE Transactions on Electron Devices.

Thermal and electrical characterization of catastrophic degradation of silicon solar cells submitted to reverse current stress

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).