C. Lu

发表

A meta-stable leakage phenomenon in DRAM charge storage —Variable hold time

D. Yaney, C. Lu, R. Kohler, 1987, 1987 International Electron Devices Meeting.

A comprehensive study on p/sup +/ polysilicon-gate MOSFET's instability with fluorine incorporation

C. Lu, J. Sung, 1990 .

Reverse short-channel effects on threshold voltage in submicrometer salicide devices

C. Lu, J. Sung, C.-Y. Lu, 1989, IEEE Electron Device Letters.

GaN photodetectors prepared on silicon and sapphire substrates

C. Lu, R. Chuang, S. Chang, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits.

Fluorine effect on boron diffusion of p/sup +/ gate devices (MOSFETs)

W. S. Lindenberger, S. J. Wang, C. Lu, 1989, International Technical Digest on Electron Devices Meeting.

Optical and Electrical Characteristics of ZnO Films Grown on Nitridated Si (1 0 0) Substrate with GaN and ZnO Double Buffer Layers

C. Lu, R. Chuang, S. Chang, 2008, IEEE Journal of Selected Topics in Quantum Electronics.

Decrease of gate oxide dielectric constant in tungsten polycide gate processes

C. Lu, Y. Cherng, H. Wulu, 1993, IEEE Electron Device Letters.

Process limitation and device design tradeoffs of self-aligned TiSi/sub 2/ junction formation in submicrometer CMOS devices

S. J. Hillenius, C. Lu, N. Tsai, 1991 .

The impact of poly-removal techniques on thin thermal oxide property in poly-buffer LOCOS technology

C. Lu, K. Lee, J. Sung, 1991 .

ZnO nanowire-based oxygen gas sensor

S.J. Chang, C.Y. Lu, C. Lu, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits.

Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology

C. Lu, S. Hillenius, J. Sung, 1989, IEEE Electron Device Letters.

An analog/digital BCDMOS technology with dielectric isolation-devices and processes

M. A. Shibib, C. N. Dunn, C. A. Goodwin, 1988 .

A new conduction model for polycrystalline silicon films

Chih-Yuan Lu, J.D. Meindl, L. Gerzberg, 1981, IEEE Electron Device Letters.

Computer-simulated explosion of poly-silicide links in laser-programmable redundancy for VLSI memory repair

C. Lu, L. Scarfone, J. Chlipala, 1989 .

High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI

C. Lu, N. Tsai, S. Hillenius, 1989 .