J. Kim

Simultaneously formed storage node contact and metal contact cell (SSMC) for 1 Gb DRAM and beyond

J.Y. Lee, K.N. Kim, Y. Shin, 1996, International Electron Devices Meeting. Technical Digest.

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

J. Kim, Kinam Kim, Y.J. Song, 2006, 2006 International Electron Devices Meeting.

Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology

J. Kim, Kinam Kim, S. Lee, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Design and implementation of an ATM cell controller for FR/ATM interworking system

Dae Young Kim, J.-S. Kim, J. Kim, 1998, Broadband Communications.