C. Fonseca

High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

S. Narasimha, K. Onishi, H. Nayfeh, 2006, 2006 International Electron Devices Meeting.

Availability of underlayer application to EUV process

Carlos Fonseca, Hyun-Woo Kim, Cha-Won Koh, 2011, Advanced Lithography.

Extreme-ultraviolet secondary electron blur at the 22-nm half pitch node

Joshua S. Hooge, C. Fonseca, K. Nafus, 2011 .

Progress in 193-nm top-surface imaging process development

David R. Wheeler, Guojing Zhang, John M. Hutchinson, 1998, Advanced Lithography.

Multi-Physics Simulation of Wafer-to-Wafer Bonding Dynamics

C. Fonseca, N. Nejadsadeghi, Nathan Ip, 2022, 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).

Understanding EUV resist dissolution characteristics and its impact to RLS limitations

Carlos Fonseca, Roel Gronheid, Gustaf Winroth, 2011, Advanced Lithography.

Optimum tone for various feature types: positive versus negative

Carlos Fonseca, Timothy A. Brunner, C. Fonseca, 2001, SPIE Advanced Lithography.

Plasma reactive ion etching of 193 nm attenuated phase shift mask materials

Bruce W. Smith, Lena V. Zavyalova, C. Fonseca, 1997 .

Methodology for generating exposure tool specifications for alternating phase-shift mask application for 70-nm node

Kafai Lai, Lars W. Liebmann, Carlos Fonseca, 2002, SPIE Advanced Lithography.

Self-aligned block technology: a step toward further scaling

Carlos Fonseca, Chris Wilson, Julien Ryckaert, 2017, Advanced Lithography.