Tomás Palacios

发表

Emerging graphene-based electronic & photonic devices, circuits, and systems [Scannning the Issue]

Maki Suemitsu, Elias Towe, Tomás Palacios, 2013, Proc. IEEE.

Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model

Tomás Palacios, Li-Shiuan Peh, Pilsoon Choi, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Large-Area 2-D Electronics: Materials, Technology, and Devices

Madan Dubey, Xu Zhang, Jing Kong, 2013, Proceedings of the IEEE.

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks

S. DasGupta, Daniel Piedra, Matthew J. Marinella, 2015, 2015 IEEE International Reliability Physics Symposium.

Graphene electronics: thinking outside the silicon box.

Tomás Palacios, T. Palacios, 2011, Nature nanotechnology.

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

Christiane Poblenz, Umesh K. Mishra, Patrick Waltereit, 2006, IEICE Trans. Electron..

Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC–DC Multiphase Buck Converter

Kenneth L. Shepard, Daniel Piedra, Tomás Palacios, 2017, IEEE Journal of Solid-State Circuits.

Scaling of InAlN/GaN power transistors

Xiang Gao, Daniel Piedra, Tomás Palacios, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors

Charles Mackin, Tomás Palacios, Elaine McVay, 2018, Sensors.

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Degradation of vertical GaN FETs under gate and drain stress

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Applications of graphene devices in RF communications

Tomás Palacios, Han Wang, Allen Hsu, 2010, IEEE Communications Magazine.

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Feng Gao, Tomás Palacios, Jungwoo Joh, 2009, 2009 Reliability of Compound Semiconductors Digest (ROCS).

Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz

Ahmad Zubair, Tomás Palacios, Joshua A. Perozek, 2021, 2021 Device Research Conference (DRC).

Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation

Daniel Piedra, Tomás Palacios, Ujwal Radhakrishna, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Evelyn N. Wang, Tomás Palacios, Omair I. Saadat, 2017, IEEE Transactions on Electron Devices.

Impact of chlorine functionalization on high-mobility chemical vapor deposition grown graphene.

Jing Kong, Tomás Palacios, Allen Hsu, 2013, ACS nano.

Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

Daniel Piedra, Xiang Gao, Ahmad Zubair, 2018, IEEE Electron Device Letters.

Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.

Ahmad Zubair, Tomás Palacios, Mildred Dresselhaus, 2017, Nanoscale.

Q&A: Taking charge

Tomás Palacios, T. Palacios, 2012, Nature.

720-V/0.35-m $\Omega \cdot$ cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers

Nadim Chowdhury, Tomás Palacios, Mengyang Yuan, 2018, IEEE Electron Device Letters.

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length.

Jing Kong, Ahmad Zubair, Efthimios Kaxiras, 2016, Nano letters.

Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.

Madan Dubey, Jing Kong, Efthimios Kaxiras, 2014, Nano letters.

Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium Nitride

Dirk Englund, Igor Aharonovich, Tomás Palacios, 2016, Advanced materials.

Synthesis of High‐Quality Large‐Area Homogenous 1T′ MoTe2 from Chemical Vapor Deposition

Jing Kong, Ziqiang Wang, Ahmad Zubair, 2016, Advanced materials.

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Daniel Piedra, Xiang Gao, Tomás Palacios, 2017, IEEE Electron Device Letters.

High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

Daniel Piedra, Tomás Palacios, Armin Dadgar, 2017, IEEE Electron Device Letters.

Functionalized MoS(2) nanosheet-based field-effect biosensor for label-free sensitive detection of cancer marker proteins in solution.

Lu Wang, Jing Kong, Tomás Palacios, 2014, Small.

InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz

Tomás Palacios, Geok Ing Ng, Haodong Qiu, 2018, IEEE Electron Device Letters.

Photoelectric Synaptic Plasticity Realized by 2D Perovskite

Tomás Palacios, Tianling Ren, Liming Ding, 2019, Advanced Functional Materials.

Dielectric screening of excitons and trions in single-layer MoS2.

Jing Kong, Tomás Palacios, Shengxi Huang, 2014, Nano letters.

High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

Xiaoxue Wang, Yang Shao-Horn, Dongwook Lee, 2018, Science Advances.

Chemiresistive Graphene Sensors for Ammonia Detection.

Jing Kong, Charles Mackin, Tomás Palacios, 2018, ACS applied materials & interfaces.