P. Han

发表

Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes

K. X. Dong, Dunjun Chen, Hai Lu, 2013, IEEE Photonics Technology Letters.

Simulation of a new style vertical HVPE system

P. Han, Rong Zhang, Youdou Zheng, 2012 .

Structure and magnetic properties of Co-doped ZnO powder prepared by sol-gel method

P. Han, R. Zhang, Y. Shi, 2005, 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004..

Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template

P. Han, Rong Zhang, Youdou Zheng, 2016 .

High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD

P. Han, H. Gong, R. Jiang, 2007 .

Low-Cost Microbolometer Type Infrared Detectors

P. Han, X. Ji, Le Yu, 2020, Micromachines.

A 1100 + V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination

Dunjun Chen, Hai Lu, P. Han, 2011 .

Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

P. Han, R. Jiang, R. Zhang, 2003 .

Stress-free InN nanowires grown on graphene by sublimation method

P. Han, Rong Zhang, Youdou Zheng, 2018 .

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

P. Han, Rong Zhang, Shengming Zhou, 2009 .

Influence of different surface-passivation dielectrics on high-temperature strain relaxation of AlGaN in AlGaN∕GaN heterostructures

X. S. Wu, P. Han, Rong Zhang, 2007 .

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

P. Han, Rong Zhang, Youdou Zheng, 2000 .

Morphological evolution and characterization of GaN pyramid arrays fabricated by photo-assisted chemical etching

P. Han, Rong Zhang, Youdou Zheng, 2016 .

Epitaxial growth of ZnO films on (100) and (001) γ-LiAlO2 substrates by pulsed laser deposition

P. Han, Rong Zhang, Xiaomin Li, 2006 .

Influence of high Mg doping on the microstructural and opto-electrical properties of AlGaN alloys

Dunjun Chen, P. Han, Rong Zhang, 2018, Superlattices and Microstructures.

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

P. Han, X. Ji, Yue Xu, 2019, Chinese Physics B.

The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity

Dunjun Chen, P. Han, Youdou Zheng, 2022, Crystals.

Study of buffer and epitaxy technology in two-step growth of aluminium nitride

P. Han, Rong Zhang, Youdou Zheng, 2008 .

Study on the self-absorption of InGaN quantum wells at high photon density.

Dunjun Chen, B. Liu, P. Han, 2020, Applied optics.

Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer

P. Han, Rong Zhang, Youdou Zheng, 2013 .

Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar

P. Han, P. Chen, R. Zhang, 2012, Journal of Materials Science: Materials in Electronics.

Characterization of m-plane ZnO thin film on γ-LiAlO2 (1 0 0) substrate by metal-organic chemical vapor deposition

P. Han, Rong Zhang, Shengming Zhou, 2009 .

Nitrogen diffusion in the Si growth on GaN by low-pressure chemical vapor deposition

P. Han, Rui Zhang, Z. M. Zhao, 2002 .

Observation of hole accumulation at the interface of an undoped InGaN/GaN heterostructure

P. Han, R. Zhang, Youliao Zheng, 2009 .

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Dunjun Chen, Hai Lu, P. Han, 2011 .

Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method

P. Han, Rong Zhang, Youdou Zheng, 2010 .

Preparation and characterization of GaN micro/nano- structures by the electrodeless photo-assisted chemical etching

Hai Lu, B. Liu, P. Han, 2015 .

Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors

P. Han, B. Shen, Youliao Zheng, 2001 .

The growth and properties of an m-plane InN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition

P. Han, Rong Zhang, Youdou Zheng, 2012 .

The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays

P. Han, Rong Zhang, Youdou Zheng, 2013 .

Growth and characterization of ZnO films on (0 0 1), (1 0 0) and (0 1 0) LiGaO 2 substrates

P. Han, Rong Zhang, Shengming Zhou, 2008 .

Structural characterization of Al 0.55 Ga 0.45 N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy

Dunjun Chen, P. Han, Rong Zhang, 2017 .

Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction

P. Han, W. Schaff, R. Zhang, 2008 .

Structural and optical properties of a-plane ZnO thin films synthesized on γ-LiAlO2 (302) substrates by low pressure metal-organic chemical vapor deposition

P. Han, Rong Zhang, Shengming Zhou, 2008 .

Polarization and temperature dependence of photoluminescence of m-plane GaN grown on γ-LiAlO2 (100) substrate

P. Han, P. Chen, R. Zhang, 2009 .

Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)

P. Han, B. Liu, P. Chen, 2008 .

Temperature dependent growth of InGaN/GaN single quantum well

P. Han, Zhihao Yu, P. Chen, 2012 .

Effect of substrate type on Ni self-assembly process

P. Han, Boyang Qu, Ping Liu, 2019, Chinese Physics B.

Temperature dependence of the pyroelectric coefficient and the spontaneous polarization of AlN

P. Han, R. Jiang, R. Zhang, 2007 .

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

P. Han, R. Zhang, Youliao Zheng, 2011 .

Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

Y. H. Chen, P. Han, W. Schaff, 2010 .

Structural and optical properties of nearly stress-free m-plane ZnO film on (1 0 0) γ-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition

P. Han, Rong Zhang, Shengming Zhou, 2009 .

Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy

P. Han, Rong Zhang, Youdou Zheng, 2018 .

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

P. Han, L. Yu, Y. Yang, 2011 .

Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method

P. Han, Rong Zhang, Youdou Zheng, 2011 .

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

P. Han, X. Ji, Feng Yan, 2020, Micromachines.

Ge-dot/Si multilayered structures through Ni-induced lateral crystallization

P. Han, Rong Zhang, Youdou Zheng, 2006 .

Reduction of morphological defects in 4H-SiC epitaxial layers

P. Han, Zhifei Zhao, P. Zhou, 2019, Journal of Crystal Growth.

Impact of lattice strain on the phase formation, polarization, and dielectric constant of PbZr1−xTixO3 films

P. Han, R. Jiang, R. Zhang, 2008 .

The study of growth and the properties of C in SiGeC alloy on Si by rapid thermal chemical vapor deposition

P. Han, N. Jiang, L. Zang, 1998, 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105).

Synthesis and Growth Mechanism: A Novel Fishing Rod-Shaped GaN Nanorods

Hai Lu, P. Han, Rong Zhang, 2014 .

Heteroepitaxial 3C-SiC on Si (1 0 0) with flow-modulated carbonization process conditions

P. Han, Zhifei Zhao, Le Yu, 2019, Journal of Crystal Growth.

Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy

P. Han, Youliao Zheng, Yuhu Shi, 1996 .

Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory

Yi Shi, R. Zhang, H. G. Yang, 2003, Microelectron. J..

Circular photogalvanic effect at inter-band excitation in InN

Bin Liu, Xiangqian Xiu, Hai Lu, 2008 .

Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface

P. Han, P. Chen, R. Zhang, 2013 .

Phenomenological model for the spontaneous polarization of GaN

Ruolian Jiang, Xiangqian Xiu, Yuechun Shi, 2007 .

The growth temperatures dependence of optical and electrical properties of InN films

B. Liu, P. Han, Rong Zhang, 2008 .

2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT

P. Han, Hengjing Tang, Xue Li, 2014 .

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Dunjun Chen, P. Han, Youdou Zheng, 2022, ACS Applied Electronic Materials.

Enhanced InGaN/GaN photoelectrodes for visible‐light‐driven hydrogen generation by surface roughening

Dunjun Chen, P. Han, Rong Zhang, 2016 .

Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer

P. Han, R. Zhang, Y. Shi, 2008 .

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

Dunjun Chen, Hai Lu, P. Han, 2011 .

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

K. X. Dong, P. Han, P. Chen, 2014 .

Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si

Dunjun Chen, P. Han, Rong Zhang, 2020 .

Realization of regular resonance mode in GaN-based polygonal microdisks on Si

Dunjun Chen, P. Han, Rong Zhang, 2020 .

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

P. Han, Rong Zhang, Youdou Zheng, 2007 .

Microstructures of Ge-dots/Si multilayered structures fabricated by Ni-induced lateral crystallization

P. Han, Youdou Zheng, Yi Shi, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Wet Oxidation of Poly-Si 1-x Ge x Layer Grown on SiO 2 /Si

P. Han, Youdou Zheng, Xiaodong Huang, 1997 .

Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells

Xu Zhou, P. Han, Youdou Zheng, 2012 .

High-efficiency photon–electron coupling resonant emission in GaN-based microdisks on Si

Dunjun Chen, P. Han, Rong Zhang, 2020 .

Fabrication of blue and green non‐polar InGaN/GaN multiple quantum well light‐emitting diodes on LiAlO2(100) substrates

Hai Lu, P. Han, Rong Zhang, 2010 .

Two-step growth of m-plane GaN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition

P. Han, Rong Zhang, Youdou Zheng, 2007 .

Non-polar m-plane GaN film and polarized InGaN/GaN LED grown on LiAlO2 (001) substrates

Z. L. Xie, X. Q. Xiu, Y. D. Zheng, 2010, OPTO.

Influence of vapor transport equilibration on the crystal quality and thermal-expansion coefficients of γ-LiAlO2

P. Han, Rong Zhang, Lianhang Zhang, 2005 .

Fabrication of Ge-dots/Si Multilayered Structures by Combination of Low-Pressure CVD and Ni-Induced Lateral Crystallization

P. Han, R. Zhang, Y. Shi, 2006, 2006 International SiGe Technology and Device Meeting.

Al incorporation, structural and optical properties of AlxGa1−xN (0.13⩽x⩽0.8) alloys grown by MOCVD

N. Ke, Jianbin Xu, W. Y. Cheung, 2008 .

High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

Dunjun Chen, P. Han, Rong Zhang, 2020, Advanced Optical Materials.

In-plane anisotropic photoluminescence of C-plane GaN under asymmetric biaxial strain

P. Han, B. Liu, R. Zhang, 2009 .

The high mobility InN film grown by MOCVD with GaN buffer layer

Chengxiang Liu, Bin Liu, Liang Li, 2007 .

Structural and optical characteristics of AlxGa1-xN/AlN superlattice

Hai Lu, P. Han, Rong Zhang, 2009 .

Study of two‐dimensional electron gas in AlN/GaN heterostructure by a self‐consistent method

P. Han, R. Zhang, B. Shen, 2004 .

Temperature dependence of polarized electroluminescence side emission from (0001)-oriented blue and violet InGaN∕GaN light-emitting diodes

Hai Lu, P. Han, Rong Zhang, 2008 .

The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurementctions

P. Han, Rong Zhang, Youdou Zheng, 2018, IEEE Photonics Journal.

Deep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector

Xiaoli Ji, Hengjing Tang, Haimei Gong, 2013 .

Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs

P. Han, Rong Zhang, Youdou Zheng, 2009, IEEE Journal of Quantum Electronics.

Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at Al x Ga 1 − x N / G a N heterostructures

P. Han, Y. Arakawa, R. Zhang, 2000 .

Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(1 0 0) grown by low-temperature low-pressure CVD

P. Han, M. Sakuraba, T. Matsuura, 2000 .

Influence of silicon cluster on epitaxial growth of silicon carbide

P. Han, Yun Li, Zheyang Li, 2011 .

Simulation of a new style vertical HVPE system

P. Han, Youdou Zheng, Bin Liu, 2012, Science China Physics, Mechanics and Astronomy.

Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets

P. Han, Zhihao Yu, P. Chen, 2012 .

Study of Dislocation Densities of Thick GaN Films

P. Han, Rong Zhang, Youdou Zheng, 2014, CIT 2014.

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

Hai Lu, P. Han, Rong Zhang, 2014 .

Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer

P. Han, Youdou Zheng, Bin Liu, 2013, Science China Physics, Mechanics and Astronomy.

Polishing of (1 0 0) γ-LiAlO2 wafer and its effect on the epitaxial growth of ZnO films by MOCVD

P. Han, Rong Zhang, Shengming Zhou, 2009 .

A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN

P. Han, Zu-liang Liu, P. Chen, 2009 .

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

P. Han, R. Jiang, R. Zhang, 2004, The Fourth International Workshop on Junction Technology, 2004. IWJT '04..

Growth and properties of wide spectral white light emitting diodes

B. Liu, P. Han, Rong Zhang, 2011 .

Structural characterization of AlGaN/AlN Bragg reflector grown by metalorganic chemical vapor deposition

Xiaoli Ji, Liang Li, Ruolian Jiang, 2008 .

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

P. Han, Youdou Zheng, Zhihao Yu, 2013 .

Function of quantum-confinement effect in the AlGaN∕AlN∕GaN heterostructure with an AlN interfacial layer

P. Han, Rong Zhang, Youdou Zheng, 2007 .

Study of the defects in GaN epitaxial films grown on sapphire by HVPE

Lin Chen, Shulin Gu, Zili Xie, 2008, International Conference on Thin Film Physics and Applications.

Investigation of a noise source and its impact on the photocurrent performance of long-wave-infrared InAs/GaSb type-II superlattice detectors.

P. Han, Xiaomu Wang, X. Ji, 2020, Optics express.

Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices

P. Han, H. Bao, Yun Li, 2011 .

Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes

G. Chen, Z. Y. Li, S. Bai, 2008, International Conference on Thin Film Physics and Applications.

Room-temperature blue luminescence of thermally oxidized Si1−x−yGexCy thin films on Si (100) substrates

P. Han, Youdou Zheng, R. Jiang, 1999 .

Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si 1−x−y Ge x C y Thin Films on Si(100) Substrate

P. Han, X. M. Cheng, L. Zang, 1999 .

Study of structures and magnetic properties of single crystalline HVPE–GaMnN films

P. Han, Y. Shi, Bin Liu, 2006 .