H. Ohno

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

A 1-Mb STT-MRAM with zero-array standby power and 1.5-ns quick wake-up by 8-b fine-grained power gating

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2013, 2013 5th IEEE International Memory Workshop.

10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy

H. Ohno, T. Tsuruoka, F. Matsukura, 2002 .

Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance

H. Ohno, S. Fukami, Chaoliang Zhang, 2019, Physical Review Applied.

Properties of Ga1−xMnxAs with high x (>0.1)

H. Ohno, F. Matsukura, Y. Nishitani, 2008 .

Current-driven magnetization reversal in exchange-biased spin-valve nanopillars

H. Ohno, J. Hayakawa, S. Ikeda, 2005 .

Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate

H. Ohno, F. Matsukura, 2015 .

Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure

H. Ohno, F. Matsukura, H.S.W. Chang, 2013 .

A window on the future of spintronics.

H. Ohno, 2010, Nature Materials.

Curie temperature versus hole concentration in field-effect structures of Ga 1 − x Mn x As

H. Ohno, F. Matsukura, M. Endo, 2010, 1001.3909.

Electric double layer transistor with a (Ga,Mn)As channel

Hideo Ohno, Daichi Chiba, Hidekazu Shimotani, 2010 .

Valence band barrier at (Ga,Mn)As/GaAs interfaces

H. Ohno, F. Matsukura, Y. Ohno, 2002 .

Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope

H. Ohno, T. Hasegawa, F. Matsukura, 2000 .

Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy

H. Ohno, F. Matsukura, Y. Ohno, 1998 .

Low-temperature conduction and giant negative magnetoresistance in III–V-based diluted magnetic semiconductor: (Ga, Mn)As/GaAs

H. Ohno, F. Matsukura, A. Shen, 1998 .

Strongly Anisotropic Hopping Conduction in (Ga, Mn)As/GaAs

H. Ohno, F. Matsukura, A. Shen, 1998 .

Dependence of Magnetic Anisotropy in Co20Fe60B20 Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis

H. Ohno, H. Matsuoka, J. Hayakawa, 2012 .

Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures

H. Ohno, S. Ikeda, T. Ohkubo, 2009 .

Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device

Hiroaki Honjo, Kunihiko Ishihara, Keizo Kinoshita, 2014, IEEE Transactions on Magnetics.

Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism

H. Ohno, F. Matsukura, Y. Ohno, 2003 .

Semiconductor spintronics using ferromagnetic semiconductor heterostructures

H. Ohno, 2002 .

Spin degree of freedom in ferromagnetic semiconductor heterostructures

H. Ohno, F. Matsukura, Y. Ohno, 2003 .

Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance

Hideo Ohno, Shunsuke Fukami, Chaoliang Zhang, 2019, Applied Physics Letters.

Spin-transfer torque RAM technology: Review and prospect

Takayuki Kawahara, Hideo Ohno, Riichiro Takemura, 2012, Microelectron. Reliab..

Characterization of spin–orbit torque-controlled synapse device for artificial neural network applications

Hideo Ohno, Shunsuke Fukami, William A. Borders, 2018, Japanese Journal of Applied Physics.

Use of analog spintronics device in performing neuro-morphic computing functions

Hideo Ohno, Shunsuke Fukami, William A. Borders, 2017, 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S).

Domain Wall Motion Device for Nonvolatile Memory and Logic — Size Dependence of Device Properties

Shoji Ikeda, Hideo Ohno, Shunsuke Fukami, 2014, IEEE Transactions on Magnetics.

Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents

H. Ohno, S. Fukami, M. Yamanouchi, 2013, Nature Communications.

Electrical endurance of Co/Ni wire for magnetic domain wall motion device

Shoji Ikeda, Hiroaki Honjo, Keizo Kinoshita, 2013 .

1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times

Shoji Ikeda, Hiroki Koike, Tetsuo Endoh, 2012, 2012 Symposium on VLSI Circuits (VLSIC).

High-speed and reliable domain wall motion device: Material design for embedded memory and logic application

S. Fukami, S. Ikeda, N. Kasai, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device

S. Fukami, S. Ikeda, N. Kasai, 2012, IEEE Transactions on Magnetics.

Magnetic tunnel junction for nonvolatile CMOS logic

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2010, 2010 International Electron Devices Meeting.

2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read

R. Takemura, H. Ohno, H. Matsuoka, 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

Influence of domain wall anisotropy on the current-induced hysteresis loop shift for quantification of the Dzyaloshinskii-Moriya interaction

H. Ohno, S. Fukami, T. Dohi, 2021, Physical Review B.

A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture

Vincent Gripon, Tetsuo Endoh, Naoya Onizawa, 2014, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers

H. Ohno, F. Matsukura, H. Chang, 2014 .

Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions

H. Ohno, F. Matsukura, M. Yamanouchi, 2007 .

A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)

H. Ohno, H. Sakaki, T. Hotta, 1982 .

Electric-field effect on magnetic anisotropy in Pt/Co/Pd/MgO structures deposited on GaAs and Si substrates

H. Ohno, F. Matsukura, D. Chiba, 2017 .

Growth of a (GaAs)n/(InAs)n Superlattice Semiconductor by Molecular Beam Epitaxy

H. Ohno, H. Hasegawa, T. Takama, 1985 .

In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis

H. Ohno, S. Ikeda, F. Matsukura, 2015 .

A Common Energy Reference for DX Centers and EL2 Levels in III–V Compound Semiconductors

H. Ohno, H. Hasegawa, 1986 .

Direct mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires

H. Ohno, Y. Ohno, J. Ishihara, 2013 .

Deep level characterization of AlGaAs and selectively doped N‐AlGaAs/GaAs heterojunctions

H. Ohno, H. Hasegawa, H. Kato, 1985 .

Electrical magnetization reversal in ferromagnetic III–V semiconductors

H. Ohno, F. Matsukura, D. Chiba, 2006 .

III-V Ferromagnetic Semiconductors

H. Ohno, F. Matsukura, T. Dietl, 2002 .

Growth and properties of (Ga, Mn)As on Si (100) substrate

H. Ohno, F. Matsukura, E. Abe, 2002 .

Spin Polarization Dependent Far Infrared Absorption in Ga1-xMnxAs

K. Nagasaka, H. Ohno, F. Matsukura, 2001 .

Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures

H. Ohno, F. Matsukura, Y. Ohno, 2001 .

Magnetic circular dichroism in Mn 2p core absorption of Ga1−xMnxAs

H. Ohno, F. Matsukura, S. Imada, 2001 .

Temperature dependence of electroluminescence and I–V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions

H. Ohno, F. Matsukura, Y. Ohno, 2001 .

Surface morphologies of III-V based magnetic semiconductor (Ga,Mn)As grown by molecular beam epitaxy

H. Ohno, F. Matsukura, Y. Ohno, 2000 .

MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As

H. Ohno, F. Matsukura, Y. Ohno, 2000 .

Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth

H. Ohno, H. Yasuda, 1999 .

ESR study of Mn doped II–VI and III–V DMS

H. Ohno, F. Matsukura, H. Nojiri, 1998 .

Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As

H. Ohno, F. Matsukura, Y. Ohno, 1998 .

Faraday rotation of ferromagnetic (Ga,Mn)As

H. Ohno, F. Matsukura, Y. Ohno, 1998 .

REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION OSCILLATIONS DURING GROWTH OF GAAS AT LOW TEMPERATURES UNDER HIGH AS OVERPRESSURE

H. Ohno, A. Shen, Y. Horikoshi, 1997 .

Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs

H. Ohno, F. Matsukura, A. Shen, 1997 .

Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

H. Ohno, F. Matsukura, A. Shen, 1997 .

(Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy

H. Ohno, F. Matsukura, Y. Ohno, 1997 .

Surfactant effect of Mn on the formation of self-organized InAs nanostructures

H. Ohno, F. Matsukura, Y. Ohno, 2000 .

Giant Negative Magnetoresistance of (Ga,Mn)As/GaAs in the Vicinity of a Metal–Insulator Transition

H. Ohno, F. Matsukura, A. Shen, 1998 .

Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions

H. Ohno, S. Fukami, E. C. Enobio, 2021 .

Scaling magnetic tunnel junction down to single-digit nanometers—Challenges and prospects

Hideo Ohno, Shunsuke Fukami, Butsurin Jinnai, 2020 .

Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires

H. Ohno, S. Fukami, Hideo Sato, 2018, Applied Physics Letters.

A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories

T. Endoh, T. Ohsawa, S. Ikeda, 2013, 2013 Symposium on VLSI Circuits.

A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme

Shoji Ikeda, Takayuki Kawahara, Hiroyuki Yamamoto, 2010, IEEE Journal of Solid-State Circuits.

High-Mobility Field-Effect Transistors Based on Single-Crystalline ZnO Channels

Masashi Kawasaki, Akira Ohtomo, Hideo Ohno, 2005 .

Atomic-Scale Structure and Local Chemistry of CoFeB-MgO Magnetic Tunnel Junctions.

H. Ohno, S. Ikeda, S. Fukami, 2016, Nano letters.

Current distribution in metallic multilayers from resistance measurements

H. Ohno, S. Fukami, A. Thiaville, 2020, Physical review B.

Anodic Oxidation for Enhancement of Fabrication Yield and Efficiency of Amorphous Silicon Solar Cells

H. Ohno, H. Hasegawa, H. Yamamoto, 1988 .

Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures

H. Ohno, S. Ikeda, F. Matsukura, 2012, IEEE Transactions on Magnetics.

Quantum Hall Effect in Polar Oxide Heterostructures

Masashi Kawasaki, Akira Ohtomo, Hideo Ohno, 2007, Science.

Zener model description of ferromagnetism in zinc-blende magnetic semiconductors

H. Ohno, F. Matsukura, Ohno, 2000, Science.

GaAs and In0.53Ga0.47As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE

H. Ohno, H. Hasegawa, H. Ishii, 1988 .

A computer simulation of the recombination process at compound semiconductor surfaces and hetero-interfaces

H. Ohno, H. Hasegawa, T. Saitoh, 1990 .

Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot

H. Ohno, K. Ohtani, S. Marcet, 2010 .

Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy

H. Ohno, L. Eastman, J. Shealy, 1983 .

Making nonmagnetic semiconductors ferromagnetic

H. Ohno, Ohno, Hideo Ohno, 1998, Science.

Spin injection from a ferromagnetic electrode into InAs surface inversion layer

H. Ohno, K. Mukasa, K. Yoh, 2002, International Conference on Molecular Bean Epitaxy.

Electric Field Effect on the Magnetic Properties of III–V Ferromagnetic Semiconductor (In,Mn)As and ((Al),Ga,Mn)As

H. Ohno, F. Matsukura, E. Abe, 2003 .

Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time

H. Ohno, Y. Ohno, Tao Wang, 2000 .

Magnetic and Free-Layer Properties of MgO/(Co)FeB/MgO Structures: Dependence on CoFeB Composition

H. Ohno, Hideo Sato, M. Bersweiler, 2017, IEEE Magnetics Letters.

Magnetic Properties of CoFeB–MgO Stacks With Different Buffer-Layer Materials (Ta or Mo)

H. Ohno, F. Matsukura, S. Fukami, 2016, IEEE Transactions on Magnetics.

Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions

H. Ohno, J. Hayakawa, S. Ikeda, 2006, cond-mat/0608551.

Ferromagnetic semiconductors for spintronics

H. Ohno, 2006 .

Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate

Chennupati Jagadish, Li Li, Rongkun Zheng, 2012 .

Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions

Hideo Ohno, Hisao Yamamoto, Katsuya Miura, 2010 .

Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers

H. Ohno, J. Hayakawa, S. Ikeda, 2006 .

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

Shoji Ikeda, Hideo Ohno, Fumihiro Matsukura, 2005, cond-mat/0510531.

Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond

H. Ohno, T. Kawahara, K. Ono, 2010, 2010 IEEE International Memory Workshop.

Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance

H. Ohno, F. Matsukura, S. Kanai, 2016 .

Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions

H. Ohno, F. Matsukura, M. Yamanouchi, 2011 .

A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves

H. Ohno, H. Hasegawa, T. Sawada, 1988 .

InP High Mobility Enhancement MISFETs Using Anodically Grown Al2O3-Native Oxids/InP Interface

H. Ohno, H. Hasegawa, T. Sawada, 1983 .

Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque

H. Ohno, S. Fukami, Chaoliang Zhang, 2021 .

Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO

H. Ohno, F. Matsukura, S. Fukami, 2017 .

Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions

H. Ohno, S. Fukami, Tetsuhiro Suzuki, 2012 .

MBE growth of InP using polycrystalline InP as phosphorus source

H. Ohno, H. Hasegawa, H. Ishii, 1990, International Conference on Indium Phosphide and Related Materials.

A 3.14 um2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2012, 2012 Symposium on VLSI Circuits (VLSIC).

Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control

Tetsuo Endoh, Takahiro Hanyu, Shoun Matsunaga, 2011, 2011 Symposium on VLSI Circuits - Digest of Technical Papers.

Fine-Grained Power-Gating Scheme of a Metal–Oxide–Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory

Tetsuo Endoh, Takahiro Hanyu, Shoun Matsunaga, 2010 .

Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory

H. Ohno, T. Endoh, T. Hanyu, 2012 .

Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission

H. Ohno, F. Hellman, J. Kortright, 2012 .

Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperatures

H. Ohno, S. Ikeda, H. Gan, 2012 .

Direct measurement of current-induced fieldlike torque in magnetic tunnel junctions

H. Ohno, J. Hayakawa, T. Devolder, 2009 .

Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures (invited)

Paul Crozat, Claude Chappert, Hideo Ohno, 2008 .

Hardware-aware in-situ Boltzmann machine learning using stochastic magnetic tunnel junctions pdf

Supriyo Datta, Kerem Y. Camsari, Hideo Ohno, 2021, ArXiv.

Theory of relaxation time of stochastic nanomagnets

H. Ohno, S. Fukami, S. Kanai, 2021 .

Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

Daisuke Suzuki, Shoji Ikeda, Hiroki Koike, 2016, Proceedings of the IEEE.

Investigation of Spin-Wave Dynamics in Gyroid Nanostructures

H. Ohno, S. Fukami, P. Pirro, 2023, 2305.06319.

Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip

Shoji Ikeda, Hiroki Koike, Tetsuo Endoh, 2016, 2016 IEEE 8th International Memory Workshop (IMW).

Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2015 .

Properties of Perpendicular-Anisotropy Magnetic Tunnel Junctions Fabricated over The Cu Via

H. Ohno, T. Endoh, S. Ikeda, 2014 .

A Power-gated 32bit MPU with a Power Controller Circuit Activated by Deep-sleep-mode Instruction Achieving Ultra-low Power Operation

Tetsuo Endoh, Takahiro Hanyu, H. Ohno, 2014 .

A 500ps/8.5ns Array Read/Write Latency 1Mb Twin 1T1MTJ STT-MRAM designed in 90nm CMOS/40nm MTJ Process with Novel Positive Feedback S/A Circuit

Tetsuo Endoh, Takahiro Hanyu, H. Ohno, 2014 .

Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets

S. Fukami, S. Ikeda, H. Ohno, 2013, 2013 Symposium on VLSI Technology.

Restructuring of memory hierarchy in computing system with spintronics-based technologies

T. Endoh, T. Ohsawa, H. Koike, 2012, 2012 Symposium on VLSI Technology (VLSIT).

A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching

T. Endoh, S. Togashi, F. Iga, 2011, 2011 International Electron Devices Meeting.

Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs

Tetsuo Endoh, Takahiro Hanyu, F. Iga, 2011 .

A Compact and Ultra-Low-Power STT-MRAM-Based Associative Memory for Nearest Neighbor Search with Full Adaptivity of Template Data Format Employing Current-Mode Similarity Evaluation and Time-Domain Minimum Searching

H. Ohno, T. Endoh, S. Ikeda, 2016 .

A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories

T. Ohsawa, T. Endoh, S. Ikeda, 2013, 2013 Symposium on VLSI Technology.

Fabrication of a 99%-energy-less nonvolatile multi-functional CAM chip using hierarchical power gating for a massively-parallel full-text-search engine

T. Endoh, S. Fukami, S. Ikeda, 2013, 2013 Symposium on VLSI Technology.

Spintronics primitive gate with high error correction efficiency 6(Perror)2 for logic-in memory architecture

T. Endoh, S. Fukami, N. Kasai, 2012, 2012 Symposium on VLSI Technology (VLSIT).

High-speed simulator including accurate MTJ models for spintronics integrated circuit design

Hiroki Koike, Tetsuo Endoh, Takahiro Hanyu, 2012, 2012 IEEE International Symposium on Circuits and Systems.

Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2012, 17th Asia and South Pacific Design Automation Conference.

Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2009, IEICE Trans. Electron..

Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2009, IEICE transactions on electronics.

Fabrication of a Standby-Power-Free TMR-based Nonvolatile Memory-in-Logic Circuit Chip with a Spin-Injection Write Scheme

H. Ohno, T. Endoh, J. Hayakawa, 2008 .

1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance

Shoji Ikeda, Hiroki Koike, Tetsuo Endoh, 2015, 2015 IEEE International Memory Workshop (IMW).

Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

Tetsuo Endoh, Takahiro Hanyu, Takashi Ohsawa, 2014 .

Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell

H. Ohno, T. Endoh, S. Ikeda, 2014 .

1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning

H. Ohno, T. Endoh, T. Tanigawa, 2018, 2018 IEEE International Memory Workshop (IMW).

High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions.

H. Ohno, T. Endoh, T. Tanigawa, 2018, 2018 IEEE International Magnetic Conference (INTERMAG).

Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer

H. Ohno, T. Endoh, T. Tanigawa, 2017 .

Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

Hiroaki Honjo, Kunihiko Ishihara, Keizo Kinoshita, 2014 .

Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

H. Ohno, S. Ikeda, H. Gan, 2012 .

12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz

Daisuke Suzuki, Shoji Ikeda, Hiroki Koike, 2019, 2019 IEEE International Solid- State Circuits Conference - (ISSCC).

Spintronics Materials and Devices for Working Memory Technology

Tetsuo Endoh, Yasuo Ando, Takahiro Hanyu, 2017 .

2-2 Recent Trends for Spin-transfer Torque Magnetic Memories, which Break through the Limitation of Silicon Nonvolatile Technology(2. The Forefront of Non-volatile Memory Technology, Cutting-edge Device Technologies in Globally Competitive Fields)

Tetsuo Endoh, Takahiro Hanyu, Takashi Ohsawa, 2012 .

Challenge of MTJ-based nonvolatile logic-in-memory architecture for ultra low-power and highly dependable VLSI computing

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2015, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Localized precessional mode of domain wall controlled by magnetic field and dc current

H. Ohno, S. Fukami, Y. Nakatani, 2015 .

Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers

H. Ohno, J. Hayakawa, S. Ikeda, 2011 .

Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device

H. Ohno, S. Fukami, W. A. Borders, 2017, IEEE transactions on magnetics.

A window on the future of spintronics.

H. Ohno, 2010, Nature materials.

Current-induced torques in magnetic materials.

H. Ohno, A. Kent, A. Brataas, 2012, Nature materials.

Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy

H. Ohno, F. Matsukura, Y. Nakatani, 2010 .

Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

H. Ohno, J. Hayakawa, S. Ikeda, 2005, cond-mat/0510538.

A power-gated MPU with 3-microsecond entry/exit delay using MTJ-based nonvolatile flip-flop

T. Endoh, T. Ohsawa, H. Koike, 2013, 2013 IEEE Asian Solid-State Circuits Conference (A-SSCC).

Ferromagnetic semiconductors for spin electronics

H. Ohno, 2002 .

Publisher Correction: Spin transport and spin torque in antiferromagnetic devices

H. Ohno, K. Olejník, A. Hoffmann, 2019, Nature Physics.

Electric-field induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction

H. Ohno, F. Matsukura, S. Kanai, 2015 .

SPRAM (SPin-transfer torque RAM) design and its impact on digital systems

Takayuki Kawahara, Hideo Ohno, Riichiro Takemura, 2007, 2007 14th IEEE International Conference on Electronics, Circuits and Systems.

Time and spatial evolution of spin–orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes

H. Ohno, S. Fukami, Hideo Sato, 2018 .

Spin-orbit torque induced magnetization switching in Co/Pt multilayers

H. Ohno, S. Fukami, Hideo Sato, 2017 .

Three-terminal spintronics devices for integrated circuits

H. Ohno, S. Fukami, A. Kurenkov, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

C 2 SPIN-ORBIT TORQUE SWITCHING DEVICES FOR HIGH-SPEED MEMORIES AND ARTIFICIAL SYNAPSES

H. Ohno, S. Fukami, A. Kurenkov, 2017 .

Probing and controlling spin-relaxation in GaAs quantum wells

H. Ohno, F. Matsukura, Y. Ohno, 2001 .

Control of magnetization reversal in ferromagnetic semiconductors by electrical means

H. Ohno, F. Matsukura, M. Yamanouchi, 2004 .

Thermally Activated Longitudinal Optical Phonon Scattering of a 3.8 THz GaAs Quantum Cascade Laser

H. Ohno, K. Ohtani, Tsung-Tse Lin, 2009 .

Simultaneous lasing of interband and intersubband transitions in InAs∕AlSb quantum cascade laser structures

H. Ohno, K. Ohtani, H. Ohnishi, 2008 .

Room-temperature InAs=AlSb quantum-cascade laser operating at 8.9 /spl mu/m

H. Ohno, K. Ohtani, K. Fujita, 2007 .

Mid-infrared InAs∕AlGaSb superlattice quantum-cascade lasers

Hideo Ohno, Keita Ohtani, Kazuue Fujita, 2005 .

Molecular beam epitaxy of GaSb with high concentration of Mn

H. Ohno, F. Matsukura, E. Abe, 2000 .

Spin-dependent properties of magnetic III–V semiconductors

H. Ohno, 2001 .

PHASE TRANSITION IN THE NU = 2 BILAYER QUANTUM HALL STATE

H. Ohno, F. Matsukura, Y. Ohno, 1998, cond-mat/9801085.

Auger electron spectroscopy of molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium

H. Ohno, Y. Katayama, Y. Nomura, 1993 .

Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200

H. Ohno, F. Matsukura, Y. Nishitani, 2008 .

Nanocluster building blocks of artificial square spin ice: Stray-field studies of thermal dynamics

H. Ohno, Y. Ohno, M. Huth, 2015 .

Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction

H. Ohno, F. Matsukura, T. Kita, 2006 .

Electrical magnetization reversal in ferromagnetic semiconductors

Hideo Ohno, Michihiko Yamanouchi, Daichi Chiba, 2004, INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..

Magnetization reversal in elongated Fe nanoparticles

H. Ohno, Y. Ohno, P. Xiong, 2005, cond-mat/0505356.

Modulation of noise in submicron GaAs/AlGaAs hall devices by gating.

H. Ohno, Y. Ohno, S. von Molnár, 2004, Physical Review Letters.

Hybrid Orbital Energy for Heterojunction Band Lineup

H. Ohno, H. Hasegawa, T. Sawada, 1986 .

InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates

H. Ohno, Y. Ohno, A. Shen, 1998 .

External-Field-Robust Stochastic Magnetic Tunnel Junctions Using a Free Layer with Synthetic Antiferromagnetic Coupling

H. Ohno, S. Fukami, S. Kanai, 2022, Physical Review Applied.

Growth of GaAs by molecular-beam epitaxy using trisdimethylaminoarsine

H. Ohno, Y. Katayama, Y. Nomura, 1995 .

Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As

H. Ohno, F. Matsukura, A. Shen, 1999 .

Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited)

H. Ohno, F. Matsukura, T. Omiya, 1999 .

Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis

H. Ohno, S. Ikeda, F. Matsukura, 2016 .

Spin‐Dependent Phenomena in Ferromagnetic/Nonmagnetic III—V Heterostructures

H. Ohno, F. Matsukura, Y. Ohno, 2001 .

Magnetization Reversal by Field and Current Pulses in Elliptic CoFeB/MgO Tunnel Junctions With Perpendicular Easy Axis

H. Ohno, F. Matsukura, S. Kanai, 2016, IEEE Magnetics Letters.

Evidence for Ferromagnetic Clusters in the Colossal-Magnetoresistance Material EuB_{6}.

Z. Fisk, H. Ohno, Y. Ohno, 2018, Physical review letters.

III—V‐Based Ferromagnetic Semiconductors

H. Ohno, F. Matsukura, 2010 .

Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis

H. Ohno, S. Fukami, Hideo Sato, 2018 .

Electrical spin injection in ferromagnetic//nonmagnetic semiconductor heterostructures

Hideo Ohno, Bernd Beschoten, Fumihiro Matsukura, 2001 .

Far infrared absorption spectra in ferromagnetic Ga1-x Mn x As

K. Nagasaka, H. Ohno, F. Matsukura, 2001 .

Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As

H. Ohno, F. Matsukura, Y. Ohno, 1998 .

Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance

H. Ohno, S. Fukami, S. Kanai, 2018 .

Electrically defined ferromagnetic nanodots.

H. Ohno, F. Matsukura, D. Chiba, 2010, Nano letters.

ac susceptibility of (Ga,Mn)As probed by the anomalous Hall effect

H. Ohno, F. Matsukura, Y. Nishitani, 2009 .

Electric Field-Induced Magnetization Switching in CoFeB-MgO—Static Magnetic Field Angle Dependence

H. Ohno, S. Ikeda, F. Matsukura, 2014, IEEE Transactions on Magnetics.

Ferromagnetism and Heterostructures of III-V Magnetic Semiconductors

H. Ohno, 2000 .

Properties of (Ga,Mn)As codoped with Li

H. Ohno, F. Matsukura, Lin Chen, 2014 .

Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well

H. Ohno, Y. Ohno, M. Ono, 2011 .

Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well

H. Ohno, Y. Ohno, H. Kobayashi, 2010 .

Electron spin dynamics in InGaAs quantum wells

H. Ohno, Y. Ohno, C. Hu, 2004 .

Above room-temperature operation of InAs∕AlGaSb superlattice quantum cascade lasers emitting at 12μm

H. Ohno, K. Ohtani, Y. Moriyasu, 2007 .

Low-frequency noise in submicron GaAs/AlxGa1−xAs Hall devices

H. Ohno, Y. Ohno, S. V. Molnár, 2005 .

Magnetization reversal of iron nanoparticles studied by submicron Hall magnetometry

H. Ohno, Y. Ohno, P. Xiong, 2003 .

Effect of substrate temperature on the properties of heavily Mn-doped GaAs

H. Ohno, F. Matsukura, Hyun-Jae Lee, 2007 .

Preparation and properties of III-V based new diluted magnetic semiconductors

H. Ohno, 1997 .

An InAs-Based Intersubband Quantum Cascade Laser

Hideo Ohno, Keita Ohtani, H. Ohno, 2002 .

Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures

H. Ohno, J. Hayakawa, F. Matsukura, 2011, IEEE Transactions on Magnetics.

Erratum: “Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions” [Appl. Phys. Lett. 118, 082404 (2021)]

H. Ohno, S. Fukami, E. C. Enobio, 2021 .

Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells

H. Ohno, F. Matsukura, Y. Ohno, 2001 .

Emission wavelength control by potential notch in type-II InAs/GaSb/AlSb intersubband light-emitting structures

H. Ohno, K. Ohtani, H. Sakuma, 2001 .

Spintronics - from materials through devices to circuits -

H. Ohno, 2006, 2006 64th Device Research Conference.

Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy

H. Ohno, Y. Ohno, S. Matsuzaka, 2009 .

Deep Electron Traps in Undoped GaAs Grown by MOCVD

H. Ohno, H. Hasegawa, T. Hashizume, 1984 .

Experimental evaluation of simulated quantum annealing with MTJ-augmented p-bits

Navid Anjum Aadit, H. Ohno, S. Fukami, 2022, 2022 International Electron Devices Meeting (IEDM).

Domain wall dynamics in a single CrO2 grain

H. Ohno, Y. Ohno, M. Huth, 2011, 1101.5101.

Electric Field Effect on Magnetization of an Fe Ultrathin Film

H. Ohno, F. Matsukura, S. Fukami, 2012 .

Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AlGaAs/GaInAs/GaAs Pseudomorphic Structures

H. Ohno, Jikui Luo, H. Hasegawa, 1988 .

Anodic oxidation of a-Si:H films

H. Ohno, H. Hasegawa, S. Arimoto, 1983 .

Growth and properties of (Ga, Mn) As: A new III–V diluted magnetic semiconductor

H. Ohno, F. Matsukura, A. Shen, 1997 .

A Ferromagnetic III-V Semiconductor: (Ga,Mn)As

H. Ohno, F. Matsukura, 2001 .

Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric

H. Ohno, Y. Ohno, A. Ohtomo, 2008 .

Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well

H. Ohno, Y. Ohno, T. Takahashi, 2010 .

Electronic Properties of a Photochemical Oxide-GaAs Interface

H. Ohno, H. Hasegawa, T. Sawada, 1987 .

Hysteretic dynamic nuclear polarization in GaAs/AlxGa1-xAs (110) quantum wells

H. Ohno, Y. Ohno, C. Hu, 2003 .

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

H. Ohno, H. Hasegawa, J. Hayakawa, 2009, 0910.4204.

Comment on "Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]" by M. Kobayashi et al., arXiv:1608.07718

H. Ohno, F. Matsukura, R. Oszwałdowski, 2016, 1609.01047.

Interlayer quantum coherence and anomalous stability of ν=1 bilayer quantum Hall state

H. Ohno, F. Matsukura, Y. Horikoshi, 1998 .

New “coherent” bilayer quantum Hall states

H. Ohno, F. Matsukura, Y. Ohno, 1999 .

Stochastic behavior-considered VLSI CAD environment for MTJ/MOS-hybrid microprocessor design

Hiroki Koike, Tetsuo Endoh, Takahiro Hanyu, 2016, 2016 IEEE International Symposium on Circuits and Systems (ISCAS).

A 600-μW Ultra-Low-Power Associative Processor for Image Pattern Recognition Employing Magnetic Tunnel Junction (MTJ) Based Nonvolatile Memories with Novel Intelligent Power-Gating (IPG) Scheme

Yitao Ma, Tetsuo Endoh, Takahiro Hanyu, 2015 .

Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

Wide Operational Margin Capability of 1kbit STT-MRAM Array Chip with 1-PMOS and 1-Bottom-Pin-MTJ Type Cell

H. Ohno, T. Endoh, S. Ikeda, 2013 .

Fabrication of a nonvolatile lookup-table circuit chip using magneto/semiconductor-hybrid structure for an immediate-power-up field programmable gate array

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2009, 2009 Symposium on VLSI Circuits.

Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy

H. Ohno, T. Endoh, S. Ikeda, 2016 .