J. Thompson

发表

MOVPE growth for the fabrication of OEICs

J. Thompson, A. Wood, P. Charles, 1992 .

Low-voltage InGaAs/InP multiple-quantum-well reflective Fabry-Perot modulators for optical communications at microwave frequencies

M. J. Goodwin, A. J. Moseley, David James Robbins, 1992 .

Optoelectronic component arrays for optical interconnection of circuits and subsystems

M. Q. Kearly, I. Bennion, J. Thompson, 1991 .

High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators

A. J. Moseley, David James Robbins, M. Q. Kearley, 1989 .

8 channel InGaAs/InP quantum well asymmetric Fabry-Perot modulator hybridised with foundry VLSI silicon CMOS drive circuits

M. J. Goodwin, A. J. Moseley, A. K. Wood, 1992 .

Long wavelength GRIN-SCH MQW lasers incorporating graded GaAlInAs confinement layers

J. Thompson, A. Moseley, D. Robbins, 1990 .

Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs-GaAs structure for 0.48-/spl mu/m applications

J. Thompson, M. Dion, I. Templeton, 1995 .

Chemical beam epitaxy growth of 1.3 μm InGaAsP/InP double heterostructure lasers using all gas source doping

A. P. Roth, J. Thompson, P. Chow-Chong, 1994 .

Laser induced growth of Cd1−xMnxTe and CdTeCd1−xMnxTe superlattices

J. Thompson, J. Dubowski, J. McCaffrey, 1991 .

A magneto‐optical study of interdiffusion in InGaAs/InP quantum wells: Effects of heat treatment, substrates, and dopants

J. Thompson, A. Wood, A. Moseley, 1996 .

The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices

J. Thompson, C. Lanzieri, A. Cetronio, 1989 .

Development of a scCVD diamond detector as a transmission-type alpha particle counter

J. Thompson, S. Byun, X. Tong, 2020 .

The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substrates

A. J. Moseley, P. M. Charles, N. Carr, 1995 .

Large-area HgTe-CdTe superlattices and Hg1−xCdxTe multilayers on GaAs and sapphire substrates grown by low-temperature metalorganic chemical vapor deposition

J. Thompson, S. Wilkins, A. Stevenson, 1990 .

GRIN-SCH AlGaInAs/InP quantum-well lasers emitting at 1300 nm

D. J. Robbins, R. M. Ash, J. Thompson, 1989 .

The control and evaluation of blue shift in GaInAs/GaInAsP multiple quantum well structures for integrated lasers and Stark-effect modulators

R. J. Nicholas, R. E. Mallard, Andrew G. Norman, 1993 .

MESFET fabrication on MOCVD grown Hg1−xCdxTe

J. Thompson, P. Leech, G. N. Pain, 1990 .

The growth of CdHgTe by metalorganic chemical vapour deposition for optical communication devices

J. Thompson, P. Gori, P. Mackett, 1988 .

Digital integrated circuit using GaInAs/InP heterojunction bipolar transistors

J. G. Parton, N. A. Hiams, J. Thompson, 1989 .

The growth of CdHgTe by MOCVD at reduced temperatures

J. Thompson, D. Cole-Hamilton, P. Mackett, 1988 .

The growth of CdHgTe using the interdiffused multilayer process at reduced temperatures

J. Thompson, P. Mackett, L. Smith, 1987 .

Epitaxial growth of II–VI compounds on sapphire substrates

J. Thompson, K. Woodhouse, C. Dineen, 1986 .

CODE: a novel single step MOVPE technique for the fabrication of low-dimensional devices, quantum wires and quantum dots

J. Thompson, A. Moseley, R. Wallis, 1991 .

Conductivity and Mobility Profiles at 300 and 77 K of Epitaxial Cd x Hg1 − x Te Layers

J. Thompson, L. Smith, R. Nicholls, 1989 .

Metal–organic chemical vapor deposition of mercury cadmium telluride epitaxial films

J. Thompson, K. Woodhouse, M. Bevan, 1986 .

Investigations on the Influence of Masks on the Nature of Selective Area Epitaxy

J. Thompson, A. Wood, P. Charles, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Metal organic chemical vapour deposition (MOCVD) of cadmium telluride, mercury telluride and cadmium mercury telluride

J. Thompson, J. Thompson, L. M. Smith, 1990 .

Influence of layer thickness on the quality of mercury cadmium telluride epilayers grown by the interdiffused multilayer process

P. M. Raccah, J. Thompson, Z. Zhang, 1986 .

The growth of CMT on GaAs for high quality linear arrays of MWIR and LWIR photodiodes

J. Thompson, D. Patel, A. Durand, 1991 .

MOCVD growth of CdTe and CdHgTe at 350°C using a new cadmium source

J. Thompson, A. C. Jones, L. Smith, 1988 .

Microwave frequency operation of a low-voltage InGaAs/InP multiple-quantum-well reflective Fabry-Perot modulator

M. J. Goodwin, A. J. Moseley, David James Robbins, 1990 .

Composition assessment by spatially resolved photoluminescence of InGaAs and InGaAsP epilayers grown on recessed InP substrates

J. Thompson, A. Wood, R. Pritchard, 1993 .

A Calmparison of MOVPE Grown Strained and Unstrained MQW Lasers Incorporating Continuously Graded or Single Composition Confinement Layers

J. Thompson, A. Wood, A. Moseley, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Selective area MOVPE growth for device integration

J. Thompson, A. Wood, P. Charles, 1993 .

Passively aligned four-channel reflective InP MQW modulator transmitter

A. J. Moseley, C. Edge, N. Carr, 1995 .

Characterization of Au-Sn eutectic die attach process for optoelectronics device

Decai Sun, J. Thompson, J. Thompson, 2005, 2005 International Symposium on Electronics Materials and Packaging.

The growth and characterization of InP-based multiquantum wells and multilayer structures

J. Thompson, A. Moseley, D. Robbins, 1990 .

The use of InP-based semiconductor reflective stacks for enhanced device performance

J. Thompson, A. Wood, A. Moseley, 1991 .

Uniform 8x8 array InGaAs/InP multiquantum well asymmetric Fabry-Perot modulators for flipchip solder bond hybrid optical interconnect

M. J. Goodwin, A. J. Moseley, David James Robbins, 1992 .

The metal-organic vapour phase epitaxy growth of GaInAsP and GaAlInAs based graded refractive index separate confinement heterostructure multiple quantum well lasers incorporating linearly graded confinement layers

J. Thompson, A. Wood, A. Moseley, 1991 .

Influence of substrate dopant type on the optical properties of multiquantum well structures grown by low pressure MOVPE

J. Thompson, A. Wood, A. Moseley, 1997 .

MIT-OSU-HP Focus center on non-lithographic Technologies for MEMS and nEMS

C. Sodini, J. Thompson, V. Bulović, 2008 .