Z. Liu

发表

Threshold of femtosecond laser-induced damage in transparent materials

T. Jia, R. X. Li, Z. Liu, 2002 .

Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region.

Z. Liu, J. Zhu, D. Jiang, 2017, Optics express.

Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold.

Z. Liu, J. Zhang, J. Zhu, 2017, Applied optics.

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

Z. Liu, Ping Chen, Xiaoyue He, 2015 .

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

Z. Liu, Hui Yang, Dongshan Zhao, 2007 .

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Z. Liu, Xiaoyue He, Wenzhu Liu, 2016 .

A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current

Z. Liu, Wenzhu Liu, H. Yang, 2015 .

Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness

Z. Liu, J. P. Liu, Wenzhu Liu, 2015 .

Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

X. Y. Li, Z. Liu, Hui Yang, 2006 .

Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition

Z. Liu, Hui Yang, Degang Zhao, 2009 .

Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.

Z. Liu, J. P. Liu, H. Yang, 2015, Optics express.

Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

Z. Liu, Hui Yang, Wei Liu, 2015 .

Enhancing the performance of InGaN/GaN multiple quantum well blue laser diodes by suppressing the overflow of holes

Z. Liu, Dongshan Zhao, D. Jiang, 2018, Superlattices and Microstructures.

Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes

Z. Liu, H. Yang, J. Zhu, 2017, Scientific Reports.

XPS study of impurities in Si‐doped AlN film

Z. Liu, J. P. Liu, J. Zhu, 2016 .

Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

Z. Liu, J. P. Liu, H. Yang, 2016 .

Photoelectric characteristics of metal/InGaN/GaN heterojunction structure

Z. Liu, Wenzhu Liu, H. Yang, 2008 .

The compensation role of deep defects in the electric properties of lightly Si-doped GaN

Z. Liu, Wenzhu Liu, Dongshan Zhao, 2019, Journal of Alloys and Compounds.

Investigation on the structural origin of n-type conductivity in InN films

Z. Liu, Hong Wang, J. Zhu, 2008 .

Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors

X. Y. Li, Z. Liu, Hui Yang, 2007 .

Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

Z. Liu, Xiaoyue He, J. P. Liu, 2016 .

The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters

Z. Liu, J. P. Liu, Wenzhu Liu, 2015 .

Differential resistance of GaN-based laser diodes with and without polarization effect.

Z. Liu, J. Zhu, D. Jiang, 2015, Applied optics.

The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells

Mo Li, Z. Liu, D. Jiang, 2018, Optical Materials.

Photoluminescence properties and thermal stability of Eu2+ and Mn2+ co-doped BaSi3O4N2 phosphors

Z. Liu, M. Hong, Decai Huang, 2015 .

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

Z. Liu, J. Zhu, D. Jiang, 2013 .

Space-charge-limited currents in GaN Schottky diodes

Z. Liu, H. Yang, Degang Zhao, 2005 .

An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

Z. Liu, Hui Yang, Q. Jia, 2010 .

Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD

Z. Liu, J. P. Liu, Wenzhu Liu, 2017 .

Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

Z. Liu, Ying Fan, G. Chen, 2012 .

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

Mo Li, Z. Liu, W. Wang, 2018, AIP Advances.

Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Z. Liu, Xiaoyue He, D. Jiang, 2014 .

The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition

Z. Liu, Hui Yang, J. Zhu, 2008 .

Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

Z. Liu, Hongyang Wang, H. Yang, 2013 .

Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses

Z. Liu, J. P. Liu, H. Yang, 2016 .

Photoluminescence properties of M3+ (M3+=Bi3+, Sm3+) activated Na5Eu(WO4)4 red-emitting phosphors for white LEDs

Z. Liu, Yuanhua Lin, M. Hong, 2013 .

Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

Z. Liu, Hong Wang, H. Yang, 2009 .

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

Z. Liu, Hong Wang, H. Yang, 2009 .

Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3

Z. Liu, Wenzhu Liu, H. Yang, 2017 .

Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms

Mo Li, Z. Liu, Wenzhu Liu, 2017 .

The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN‐based multiple quantum well laser diodes

Z. Liu, J. P. Liu, H. Yang, 2015 .

Different annealing temperature suitable for different Mg doped P-GaN

Z. Liu, Wenzhu Liu, D. Jiang, 2017 .

Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green

Jianjun Zhu, Desheng Jiang, Z. Liu, 2009 .

The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

Z. Liu, Xiaoyue He, D. Jiang, 2014 .

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

Z. S. Liu, Hui Yang, X. Y. Li, 2006 .

Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer

Mo Li, Z. Liu, Wenzhu Liu, 2019, Optics & Laser Technology.

Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films

Z. Liu, Hong Wang, J. Zhu, 2009 .

Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

Z. Liu, Ping Chen, Xiaoyue He, 2016 .

Effect of annealing on photoluminescence properties of neon implanted GaN

Z. Liu, J. Zhu, D. Jiang, 2008 .

Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs

Z. Liu, J. P. Liu, H. Yang, 2016 .

Structural properties of Ne implanted GaN

Z. Liu, Hong Wang, J. Zhu, 2008 .

Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

Z. S. Liu, Hui Yang, Jun Liang, 2011 .

Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

Hui Yang, Uwe Jahn, Z. S. Liu, 2008 .

Stable multiplication gain in GaN p–i–n avalanche photodiodes with large device area

Wenzhu Liu, Xiujian Sun, Z. S. Liu, 2009 .

Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers

Z. Liu, F. Liang, J. Yang, 2021, Journal of Applied Physics.

The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content

Z. Liu, J. P. Liu, D. Jiang, 2016 .

The investigation on carrier distribution in InGaN/GaN multiple quantum well layers

Z. S. Liu, Z. Liu, Y. Qiu, 2011 .

Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes

Z. Liu, D. Jiang, Y. Xing, 2019, Applied Physics B.

Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies

Z. Liu, J. Yang, P. Chen, 2021 .

Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers

Z. Liu, Xiaoyue He, H. Yang, 2015 .

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes.

Z. Liu, J. P. Liu, H. Yang, 2016, Optics express.

Effect of light Si-doping on the near-band-edge emissions in high quality GaN

Z. Liu, Hongyang Wang, H. Yang, 2012 .

A novel supramolecular assembly of nitronyl nitroxides with ladder framework: Crystal structure and magnetic property

Z. Liu, Daoxiang Zhang, Wang Hongbao, 2004 .

Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

Pengwan Chen, Z. S. Liu, Z. Liu, 2014 .