J. Fastenau

发表

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman, 2011, 2011 International Electron Devices Meeting.

Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate

M. Suttinger, R. Go, P. Figueiredo, 2018, Defense + Security.

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

G. Dewey, B. Chu-Kung, J. Boardman, 2011, 2011 International Electron Devices Meeting.

Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

G. Dewey, B. Chu-Kung, J. Fastenau, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

G. Dewey, B. Chu-Kung, J. Fastenau, 2010, 2010 International Electron Devices Meeting.

Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fT

Z. Griffith, E. Lind, J. Fastenau, 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

High performance continuous wave 1.3 μm quantum dot lasers on silicon

John E. Bowers, Arthur C. Gossard, Dmitri Lubyshev, 2014 .

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.

J. Fastenau, W. K. Liu, M. Hopkinson, 2007, Optics letters.

Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

J. Fastenau, T. Mayer, S. Datta, 2011, 2011 International Electron Devices Meeting.

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/

J. Fastenau, D. Lubyshev, M. Rodwell, 2005, IEEE Electron Device Letters.

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Amy W. K. Liu, J. Fastenau, D. Lubyshev, 2011 .

Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers

Rui Q. Yang, Matthew B. Johnson, Amy W. K. Liu, 2016 .

Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

J. Fastenau, D. Lubyshev, T. Mayer, 2012, IEEE Electron Device Letters.

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

Z. Griffith, J. Fastenau, M. Rodwell, 2005, IEEE Electron Device Letters.

Wideband DHBTs using a graded carbon-doped InGaAs base

J. Fastenau, D. Lubyshev, M. Urteaga, 2003, IEEE Electron Device Letters.

Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS

Amy W. K. Liu, J. Fastenau, D. Lubyshev, 2009 .

In/sub 0.53/Ga/sub 0.47/As/InP Type-I DHBTs w/ 100 nm collector and 491 GHz f,415 GHz f/sub max/

J. Fastenau, M. Rodwell, X. Fang, 2005, International Conference on Indium Phosphide and Related Materials, 2005.

In/sub 0.53/Ga/sub 0.47/As/InP type-I DHBTs having 450 GHz f/sub T/ and GHz f/sub max/ w/C/sub cb/I/sub c/ = 0.38 ps/V

J. Fastenau, M. Rodwell, X. Fang, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

InGaAs-InP Mesa DHBTs With Simultaneously High and and Low Ratio

Mark J. W. Rodwell, J. M. Fastenau, Dmitri Lubyshev, 2004 .

200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz

Amy W. K. Liu, J. Fastenau, M. Rodwell, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities

Amy W. K. Liu, J. Fastenau, T. Mayer, 2011 .

Advanced High-K Gate Dielectric for High-Performance Short-Channel In 0 . 7 Ga

G. Dewey, B. Chu-Kung, J. Fastenau, 2009 .

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Suman Datta, Mantu K. Hudait, Dmitri Lubyshev, 2012 .

Four-band quantum well infrared photodetector array

Kwong-Kit Choi, Sir B. Rafol, Jason M. Mumolo, 2003 .

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{\tau}/f_{\max} \sim \hbox{430/800}\ \hbox{GHz}$

J. Fastenau, W. K. Liu, M. Urteaga, 2011, IEEE Electron Device Letters.

Commercial molecular beam epitaxy production of high quality SrTiO3 on large diameter Si substrates

J. Fastenau, W. K. Liu, D. Lubyshev, 2009 .

Low-resistance visible wavelength distributed Bragg reflectors using small energy band offset heterojunctions

J. Fastenau, G. Robinson, 1999 .

Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb

Sumith V. Bandara, Meimei Z. Tidrow, Dmitri Lubyshev, 2016 .

High speed devices

P. Asbeck, S. Mookerjea, D. Ritter, 2010, 68th Device Research Conference.

640x512 pixel four-band, broad-band, and narrow-band quantum well infrared photodetector focal plane arrays

C. A. Shott, J. Fastenau, S. Gunapala, 2004 .

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

J. Fastenau, W. K. Liu, D. Lubyshev, 2008 .

Monolithic III-V/Si integration

J. Fastenau, D. Lubyshev, B. Brar, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE

Dennis T. Norton, J. Fastenau, D. Lubyshev, 2013 .

MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

G. Dewey, B. Chu-Kung, J. Boardman, 2011, International Electron Devices Meeting.

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

J. Fastenau, D. Lubyshev, M. Hudait, 2012 .

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

E. Augendre, M. Urteaga, B. Brar, 2009, 2009 IEEE International SOI Conference.

Monolithic integration of InP-based transistors on Si substrates using MBE

T. E. Kazior, Bobby Brar, Dmitri Lubyshev, 2009 .

Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography

J. Fastenau, D. Lubyshev, M. Twigg, 2020 .

Intermixing of InGaAs quantum dots grown by cycled monolayer deposition

Boon S. Ooi, Hery Susanto Djie, James C. M. Hwang, 2006 .

MBE development of dilute nitrides for commercial long-wavelength VCSEL applications

J. Fastenau, K. Evans, R. Pelzel, 2002, International Conference on Molecular Bean Epitaxy.

MWIR barrier infrared detectors with greater than 5μm cutoff using bulk InAsSb grown on GaSb substrates

Alexander Brown, Meimei Tidrow, Amy W. K. Liu, 2017, Defense + Security.

Quantum Dashes on InP Substrate for Broadband Emitter Applications

J. Fastenau, B. Ooi, X. Fang, 2008, IEEE Journal of Selected Topics in Quantum Electronics.

Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices

Kwong-Kit Choi, Sarath D. Gunapala, Sumith V. Bandara, 2002 .

Commercial production of QWIP wafers by molecular beam epitaxy

J. Fastenau, W. K. Liu, D. Lubyshev, 2001 .

Tuning and tailoring of broadband quantum-well infrared photodetector responsivity spectrum

Sir B. Rafol, Jason M. Mumolo, Sarath D. Gunapala, 2005 .

640 × 512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays

Kwong-Kit Choi, Sir B. Rafol, Jason M. Mumolo, 2003 .

Large-format dual-broadband QWIP focal plane array imaging interferometers

Sir B. Rafol, Jason M. Mumolo, Sarath D. Gunapala, 2003, SPIE Defense + Commercial Sensing.

MULTI-BAND GaAdAlGaAs QUANTUM WELL INFRARED PHOTODETECTOR ( QWIP ) FOCAL PLANE ARRAYS

C. A. Shott, K., J. Fastenau, 2003 .

Quantum Dash Intermixing

W.H. Chang, Yang Wang, J. Fastenau, 2008, IEEE Journal of Selected Topics in Quantum Electronics.

High operating temperature nBn detector with monolithically integrated microlens

J. Fastenau, D. Lubyshev, D. Ting, 2018 .

Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing

J. Fastenau, W. K. Liu, Y. Wang, 2008, Laser Physics.

Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

J. Fastenau, W. K. Liu, B. Ooi, 2007 .

InGaAs/InP DHBTs With 120-nm Collector Having Simultaneously High f (cid:28) , f max 450 GHz

J. Fastenau, M. Rodwell, X. Fang, 2005 .

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

J. Fastenau, D. Lubyshev, M. Hudait, 2013 .

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

J. Fastenau, D. Lubyshev, M. Hudait, 2012 .

Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications

Dmitri Lubyshev, Sara Bals, Joel M. Fastenau, 2004 .

Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE

J. Fastenau, D. Lubyshev, M. Rodwell, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

J. Fastenau, M. Rodwell, U. Singisetti, 2006, IEEE Electron Device Letters.

Temperature-dependent minority carrier lifetime in InAsSb nBn detectors on alternative substrates

Sanjay Krishna, Dmitri Lubyshev, Joel M. Fastenau, 2019, Optical Engineering + Applications.

Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

S. Datta, R. Chau, G. Dewey, 2007, IEEE Electron Device Letters.

InP-based quantum cascade lasers monolithically integrated onto silicon.

M. J. Furlong, J. Fastenau, D. Lubyshev, 2018, Optics express.

100mm GaSb substrate manufacturing for IRFPA epi growth

L. P. Allen, Dmitri Lubyshev, Yueming Qiu, 2012, Defense + Commercial Sensing.

Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers

Rui Q. Yang, Robert T. Hinkey, Zhaobing Tian, 2012 .

Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si

S. A. Nelson, J. Fastenau, D. Lubyshev, 2021 .

Optical modulators at 604 nm using strain-balanced InGaP/InGaP MQWs

G. Y. Robinson, J. Fastenau, P. Thiagarajan, 1998 .

Growth, characterization, and uniformity analysis of 200 mm wafer-scale SrTiO3/Si

J. Fastenau, W. K. Liu, D. Lubyshev, 2010 .

Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

J. Fastenau, D. Lubyshev, M. Hudait, 2013 .

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

Mark J. W. Rodwell, Vibhor Jain, Miguel Urteaga, 2015, IEEE Transactions on Electron Devices.

Monolithically Integrated III-V and Si CMOS Devices on Silicon on Lattice Engineered Substrates (SOLES)

J. Fastenau, W. K. Liu, D. Lubyshev, 2009 .

Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications

S. Datta, J. Kavalieros, R. Chau, 2007, 2007 IEEE International Electron Devices Meeting.

Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices

Michael Wraback, Dmitri Lubyshev, Yueming Qiu, 2012, Other Conferences.

GaAs-based high temperature electrically pumped polariton laser

J. Fastenau, P. Bhattacharya, T. Frost, 2014 .

Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy

Michael Kattner, Phillip Frey, Mark J. Furlong, 2017, Defense + Security.

MBE growth of Sb-based bulk nBn infrared photodetector structures on 6-inch GaSb substrates

Brian J. Smith, Dmitri Lubyshev, Mark J. Furlong, 2015, Defense + Security Symposium.

MBE growth of Sb-based type-II strained layer superlattice structures on multiwafer production reactors

Dmitri Lubyshev, Amy W. K. Liu, Eric M. Jackson, 2010, Defense + Commercial Sensing.

MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon

John E. Bowers, Arthur C. Gossard, Dmitri Lubyshev, 2014 .