D. Lubyshev

发表

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman, 2011, 2011 International Electron Devices Meeting.

Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate

M. Suttinger, R. Go, P. Figueiredo, 2018, Defense + Security.

Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

W. K. Liu, D. Lubyshev, A. Cornfeld, 2001 .

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

G. Dewey, B. Chu-Kung, J. Boardman, 2011, 2011 International Electron Devices Meeting.

Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

G. Dewey, B. Chu-Kung, J. Fastenau, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

G. Dewey, B. Chu-Kung, J. Fastenau, 2010, 2010 International Electron Devices Meeting.

High performance continuous wave 1.3 μm quantum dot lasers on silicon

John E. Bowers, Arthur C. Gossard, Dmitri Lubyshev, 2014 .

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/

J. Fastenau, D. Lubyshev, M. Rodwell, 2005, IEEE Electron Device Letters.

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Amy W. K. Liu, J. Fastenau, D. Lubyshev, 2011 .

Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers

Rui Q. Yang, Matthew B. Johnson, Amy W. K. Liu, 2016 .

Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

J. Fastenau, D. Lubyshev, T. Mayer, 2012, IEEE Electron Device Letters.

Wideband DHBTs using a graded carbon-doped InGaAs base

J. Fastenau, D. Lubyshev, M. Urteaga, 2003, IEEE Electron Device Letters.

Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS

Amy W. K. Liu, J. Fastenau, D. Lubyshev, 2009 .

InGaAs-InP Mesa DHBTs With Simultaneously High and and Low Ratio

Mark J. W. Rodwell, J. M. Fastenau, Dmitri Lubyshev, 2004 .

Advanced High-K Gate Dielectric for High-Performance Short-Channel In 0 . 7 Ga

G. Dewey, B. Chu-Kung, J. Fastenau, 2009 .

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Suman Datta, Mantu K. Hudait, Dmitri Lubyshev, 2012 .

Commercial molecular beam epitaxy production of high quality SrTiO3 on large diameter Si substrates

J. Fastenau, W. K. Liu, D. Lubyshev, 2009 .

Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb

Sumith V. Bandara, Meimei Z. Tidrow, Dmitri Lubyshev, 2016 .

Low-power phototransceiver arrays with vertically integrated resonant-cavity LEDs and heterostructure phototransistors

D. Lubyshev, P. Bhattacharya, S. Pradhan, 2001, IEEE Photonics Technology Letters.

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

J. Fastenau, W. K. Liu, D. Lubyshev, 2008 .

Monolithic III-V/Si integration

J. Fastenau, D. Lubyshev, B. Brar, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE

Dennis T. Norton, J. Fastenau, D. Lubyshev, 2013 .

MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

G. Dewey, B. Chu-Kung, J. Boardman, 2011, International Electron Devices Meeting.

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

J. Fastenau, D. Lubyshev, M. Hudait, 2012 .

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

E. Augendre, M. Urteaga, B. Brar, 2009, 2009 IEEE International SOI Conference.

Monolithic integration of InP-based transistors on Si substrates using MBE

T. E. Kazior, Bobby Brar, Dmitri Lubyshev, 2009 .

Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography

J. Fastenau, D. Lubyshev, M. Twigg, 2020 .

Commercial production of QWIP wafers by molecular beam epitaxy

J. Fastenau, W. K. Liu, D. Lubyshev, 2001 .

High operating temperature nBn detector with monolithically integrated microlens

J. Fastenau, D. Lubyshev, D. Ting, 2018 .

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

J. Fastenau, D. Lubyshev, M. Hudait, 2013 .

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

J. Fastenau, D. Lubyshev, M. Hudait, 2012 .

Auger recombination in heavily carbon-doped GaAs

Richard K. Ahrenkiel, Randy J. Ellingson, Wyatt K. Metzger, 2001 .

Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications

Dmitri Lubyshev, Sara Bals, Joel M. Fastenau, 2004 .

Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE

J. Fastenau, D. Lubyshev, M. Rodwell, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Temperature-dependent minority carrier lifetime in InAsSb nBn detectors on alternative substrates

Sanjay Krishna, Dmitri Lubyshev, Joel M. Fastenau, 2019, Optical Engineering + Applications.

InP-based quantum cascade lasers monolithically integrated onto silicon.

M. J. Furlong, J. Fastenau, D. Lubyshev, 2018, Optics express.

100mm GaSb substrate manufacturing for IRFPA epi growth

L. P. Allen, Dmitri Lubyshev, Yueming Qiu, 2012, Defense + Commercial Sensing.

Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers

Rui Q. Yang, Robert T. Hinkey, Zhaobing Tian, 2012 .

Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si

S. A. Nelson, J. Fastenau, D. Lubyshev, 2021 .

Growth, characterization, and uniformity analysis of 200 mm wafer-scale SrTiO3/Si

J. Fastenau, W. K. Liu, D. Lubyshev, 2010 .

Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

J. Fastenau, D. Lubyshev, M. Hudait, 2013 .

Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates

C. D. Lee, W. K. Liu, D. Lubyshev, 2010 .

Monolithically Integrated III-V and Si CMOS Devices on Silicon on Lattice Engineered Substrates (SOLES)

J. Fastenau, W. K. Liu, D. Lubyshev, 2009 .

Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications

S. Datta, J. Kavalieros, R. Chau, 2007, 2007 IEEE International Electron Devices Meeting.

Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices

Michael Wraback, Dmitri Lubyshev, Yueming Qiu, 2012, Other Conferences.