T. Ivanov

发表

Vertical devices for future nano-electronic applications

A. Thean, N. Collaert, A. Veloso, 2016 .

The impact of energy barrier height on border traps in the metal insulator semicondoctor gate stacks on III–V semiconductors

A. Thean, N. Collaert, T. Ivanov, 2016 .

Fabrication and room temperature characterization of trilayer junctions for the development of superconducting qubits on 300 mm wafers

D. Tsvetanova, T. Ivanov, B. Govoreanu, 2021 .

A Scalable One Dimensional Silicon Qubit Array with Nanomagnets

T. Ivanov, P. Matagne, B. Govoreanu, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells

B. Parvais, B. Kaczer, E. Simoen, 2016, 2016 IEEE Symposium on VLSI Technology.

Ultimate nano-electronics

Jerome Mitard, Rita Rooyackers, Anne Vandooren, 2015 .

Si cap passivation for Ge nMOS applications

Aaron Thean, Nadine Collaert, Laura Nyns, 2013 .

Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3

B. Kaczer, D. Lin, N. Waldron, 2014, 2014 IEEE International Reliability Physics Symposium.

Engineering the III-V Gate Stack Properties by Optimization of the ALD Process

Aaron Thean, Jacopo Franco, Stefan De Gendt, 2014 .

Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition

Laura Nyns, D. Lin, Annelies Delabie, 2014 .

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

J. Raskin, A. Thean, N. Collaert, 2015 .

Invited) Vertical Nanowire FET Integration and Device Aspects

Nadine Collaert, Aaron Thean, Tsvetan Ivanov, 2016 .

Investigation of Microwave Loss Induced by Oxide Regrowth in High- Q Niobium Resonators

T. Ivanov, B. Govoreanu, I. Radu, 2020, Physical Review Applied.

Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors

T. Ivanov, S. Krishna, J. Kim, 2015 .

Optical and acoustic phonon modes in strained InGaAs/GaAs rolled up tubes

T. Ivanov, O. Schmidt, C. Deneke, 2012 .

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers

T. Ivanov, E. Guziewicz, J. Wojewoda-Budka, 2022, Materials.

Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopy

T. Ivanov, V. Donchev, M. Cotta, 2011 .

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

M. M. de Lima, G. O. Dias, T. Ivanov, 2011, Nanotechnology.

Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy

T. Ivanov, A. Stesmans, H. Arimura, 2016 .

Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling

H. Bender, N. Collaert, T. Ivanov, 2022, Journal of Applied Physics.

Surface photovoltage phase spectroscopy – a handy tool for characterisation of bulk semiconductors and nanostructures

T. Ivanov, V. Donchev, K. Germanova, 2006 .

Interdiffused InAs∕InGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy

T. Ivanov, H. S. Djie, B. Ooi, 2007 .

On the form of the elastic potential relative to different reference states

T. Ivanov, 1988 .

Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

O. Richard, T. Ivanov, C. Adelmann, 2019, ACS Applied Electronic Materials.

Investigations of the new high temperature superconductor BiSrCaCu2Ox

T. Ivanov, T. Zheleva, M. Iliev, 1988 .

Low temperature studies of the photoluminescence from colloidal CdSe nanocrystals prepared by the hot injection method in liquid paraffin

T. Ivanov, H. Yoshimura, E. Valcheva, 2014 .

Beyond-Si materials and devices for more Moore and more than Moore applications

A. Vandooren, Anabela Veloso, Liesbeth Witters, 2016, 2016 International Conference on IC Design and Technology (ICICDT).

Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation

T. Ivanov, B. Govoreanu, I. Radu, 2020, Quantum Science and Technology.

Dynamical conductivity of single electron resonant tunneling systems out of equilibrium

T. Ivanov, L. Wille, V. Valtchinov, 1994 .

The nonlinear conductance of a double quantum dot in the Kondo regime

T. Ivanov, 1997 .

Top-down InGaAs nanowire and fin vertical FETs with record performance

H. Bender, A. Thean, N. Collaert, 2016, 2016 IEEE Symposium on VLSI Technology.

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

T. Ivanov, L. Goux, B. Govoreanu, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures

Yuan Taur, Hiroshi Iwai, Aaron Thean, 2014, Microelectron. Reliab..

Vertical nanowire FET integration and device aspects

B. T. Chan, Z. Tao, E. Rosseel, 2016 .

Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

T. Ivanov, D. Hirsch, B. Rauschenbach, 2012 .

Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs

Nadine Collaert, Tsvetan Ivanov, Dennis Lin, 2018, 2018 IEEE Symposium on VLSI Technology.

Record performance Top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets

N. Collaert, A. Veloso, T. Ivanov, 2017, International Electron Devices Meeting.

The influence of post-etch InGaAs fin profile on electrical performance

M. A. Pourghaderi, J. Geypen, H. Bender, 2013 .

In0.53Ga0.47As quantum-well MOSFET with source/drain regrowth for low power logic applications

R. Rooyackers, D. Lin, N. Collaert, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.