T. Marieb

发表

A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 /spl mu/m/sup 2/ SRAM cell

P. Bai, C. Auth, S. Balakrishnan, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Local plasticity of Al thin films as revealed by x-ray microdiffraction.

J. R. Patel, N. Tamura, R. Celestre, 2003, Physical review letters.

Analysis of the Mechanical Failure in a Multilayered Thin Film System Tested by Microtensile Loading

P. Flinn, T. Marieb, M. Ignat, 1995 .

Measurement and interpretation of strain relaxation in passivated Al–0.5% Cu lines

P. Flinn, T. Marieb, J. Bravman, 1996 .

Measurement and Modeling of Intrinsic Stresses in CVD W Lines

P. Flinn, T. Marieb, Q. Ma, 1995 .

Non-Destructive Evaluation of Strains and Voiding in Passgvated Copper Metallizations

T. Marieb, J. Bravman, R. Vinci, 1993 .

Observations of electromigration induced void nucleation and growth in polycrystalline and near‐bamboo passivated Al lines

P. Flinn, T. Marieb, D. Gardner, 1995 .

Thermal Conductivity Measurements of Interlevel Dielectrics

T. Marieb, K. Goodson, E. B. Varner, 1997 .

Nucleation and Growth at Reactive Interfaces Followed by Impedance Measurements

T. Marieb, F. Voiron, M. Ignat, 1997 .

A High Voltage Scanning Electron Microscope for the In-SituObservation and Recording of Electromigration Voids in Metal Lines on Integrated Circuits.

P. Flinn, T. Marieb, J. Bravman, 1997, Microscopy and Microanalysis.

Electromigration lifetime and critical void volume

T. Marieb, Z. Suo, J. Maiz, 2004 .

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

T. Marieb, D. Gardner, D. Fraser, 1995 .

Electromigration Voiding in Argon-Implanted Interconnects

P. Flinn, T. Marieb, J. Bravman, 1999 .

A high-voltage scanning electron microscopy system for in situ electromigration testing

Paul A. Flinn, John C. Bravman, Michael C. Madden, 2000 .

In Situ Observations of Voiding in Metal Lines Under Passivation

P. Flinn, T. Marieb, J. Bravman, 1994 .

Strain Measurements from Single Grains in Passivated Aluminum Conductor Lines by X-Ray Microdiffraction During Electromigration

T. Marieb, G. Cargill, K. J. Hwang, 2000 .

Strain Measurement and Calculation in Passivated Cu Lines Deposited by Three Different Methods

T. Marieb, D. Gardner, A. Mack, 1995 .

Measurement and Interpretation of Strain Relaxation in Passivated Al-0.5%Cu Lines

T. Marieb, J. Bravman, P. Besser, 1994 .

Strain Relaxation and In-Situ Observation of Voiding in Passivated Aluminum alloy Lines

T. Marieb, J. Bravman, P. Besser, 1993 .

The Effects of Width Transitions on the Reliability of Interconnects

T. Marieb, C. Thompson, C. Hau-Riege, 2000 .

Effect of Modified Metal/Passivation Interfaces on Stress Voiding in Interconnects +

T. Marieb, R. Keller, J. Phelps, 1999 .

Observation of voids induced by mechanical stress and electromigration in passivated Al lines deposited at different purity levels

P. Flinn, T. Marieb, D. Gardner, 1994 .

Stress-Induced Void Formation in Metal Lines

Paul R. Besser, Paul A. Flinn, Anne Sauter Mack, 1993 .

High-Temperature Deformation of Nb-18 Al

T. Marieb, S. Nutt, D. Shah, 1990 .

Thermal Oxidation of Al 2 O 3 -SiC Whisker Composites: Mechanisms and Kinetics

T. Marieb, S. Nutt, F. Lin, 1988 .

Mechanical behaviour of submicron multilayers submitted to microtensile experiments

P. Flinn, T. Marieb, M. Ignat, 1999 .

Interfacial reactions in multilayers intended for microelectronics devices

T. Marieb, X. Federspiel, F. Voiron, 1998 .

90 nm generation, 300 mm wafer low k ILD/Cu interconnect technology

M. Bohr, A. Schmitz, R. Wu, 2003, Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).

High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron X-ray diffraction

J. R. Patel, N. Tamura, R. Celestre, 2002 .

The relationship between resistance changes and void volume changes in passivated aluminum interconnects

Paul A. Flinn, John C. Bravman, P. Flinn, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Direct measurement of nucleation times and growth rates of electromigration-induced voids

P. Flinn, T. Marieb, J. Bravman, 1999 .

Void phenomena in passivated metal lines: Recent observations and interpretation

P. Flinn, T. Marieb, J. Bravman, 1998 .

The evolution of the resistance of aluminum interconnects during electromigration

Paul A. Flinn, John C. Bravman, P. Flinn, 2000 .

Direct observation of the growth and movement of electromigration voids under passivation

Paul A. Flinn, John C. Bravman, Michael C. Madden, 2008 .

Effects of dielectric materials on electromigration failure

Paul A. Flinn, John C. Bravman, P. Flinn, 2001 .