S. Watts

Enhancement of data retention and write current scaling for sub-20nm STT-MRAM by utilizing dual interfaces for perpendicular magnetic anisotropy

Y. J. Lee, S. O. Park, K. S. Kim, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Advances and Future Prospects of Spin-Transfer Torque Random Access Memory

Mircea R. Stan, Avik W. Ghosh, Tim Mewes, 2010, IEEE Transactions on Magnetics.

Progress and Prospects of Spin Transfer Torque Random Access Memory

E. Chen, S. Watts, D. Apalkov, 2012, IEEE Transactions on Magnetics.

Comparison of Scaling of In-Plane and Perpendicular Spin Transfer Switching Technologies by Micromagnetic Simulation

Z. Diao, E. Chen, S. Watts, 2010, IEEE Transactions on Magnetics.

Erratum: Basic principles of STT-MRAM cell operation in memory arrays

Mohamad Towfik Krounbi, Vladimir Nikitin, Dmytro Apalkov, 2013 .

Basic principles of STT-MRAM cell operation in memory arrays

Mohamad Towfik Krounbi, Vladimir Nikitin, Dmytro Apalkov, 2013 .

Time-resolved studies of the spin-transfer reversal mechanism in perpendicularly magnetized magnetic tunnel junctions

S. Watts, A. Kent, C. Hahn, 2016, 1610.09710.

Spin-transfer torque magnetic random access memory (STT-MRAM)

Xueti Tang, Eugene Chen, Dmytro Apalkov, 2013, JETC.